BUK444 Search Results

Contextual Info: N AMER PHILIPS/DISCRETE D bb53R31 0030540 TOO • APX Product Specification Philips Semiconductors BUK444-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in

Contextual Info: BUK444-500A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)2.1 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)

Contextual Info: N AUER PH ILI PS/ DIS CR ETE 5SE D Lfa53131 Q030370 1 BUK444-500A BUK444-500B PowerMOS transistor '- 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

1B09 transistor

Abstract: 100-P BUK444-600B 1B09
Contextual Info: P H IL IP S IN T E R N A T IO N A L b 5 ED H 7 1 1 0 0 2 b O G b B 'ìT bT b O«PHIN Product Specification Philips Semiconductors BUK444-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic full-pack envelope.

BUK444

Abstract: BUK444-500A BUK444-500B
Contextual Info: N AMER P H I L I P S / D I S C R E T E asE kb53T3 1 GDSG37G 1 j> BUK444-500A BUK444-500B PowerMOS transistor T - 3 7 - 0 9 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: N AflER PHILIPS/DISCRETE b 'lE » bbSB'lBl DD3DS35 bU3 «APX Product Specification Philips Semiconductors BUK444-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in

BUK444-500A

Abstract: BUK444-500B transistor BUK444-500B BUK444
Contextual Info: N AMER PHI LI PS / DI SC R ET E ESE kfa53T31 0DSG37G D 1 BUK444-500A BUK444-500B PowerMOS transistor T - 3 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

TRANSISTOR 40

Abstract: BUK474-800A
Contextual Info: -7 ^ 3 1 Philips Components Data sheet status Preliminary specification date of issue March 1991 - C f f BUK474-800A/B PowerMOS transistor Replaces BUK444-800A/B PHILIPS INTERNATIONAL G EN E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a

BUK444-450B

Abstract: IE-04
Contextual Info: N AMER PHILI PS /D IS CR ET E 2SE D • ^53^31 002031=5 fi m PowerMOS transistor BUK444-450B T'37 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BUK444-450B

Abstract: 0203F
Contextual Info: 2SE N AMER PHILIPS/DISCRETE D ^53^31 & 00203b5 PowerMOS transistor BUK444-450B T '3 7 ~ 0 ? GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

BUK444

Abstract: BUK444-60H BUK474-60H
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Automotive applications, Switched Mode Power Supplies SMPS ,

Contextual Info: N APIER PH IL IP S/ D IS C R ET E b^E D • bbSa^l DD3QSSS 7TM « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

transistor IC BT 134

Contextual Info: 2SE D N AMER PHILIPS / D I S CR E T E bt.53131 005D3bS fl P o w e rM O S tra n s is to r B U K 444-450B T N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

BUK444-500B

Abstract: transistor npc 231 d0305 transistor BUK444-500B Q03DS3 PINNING-SOT186
Contextual Info: AUER P HI LIPS/DISCRETE b'iE » bbSB'îBl D 0 3 G 535 b 43 • A P X Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BUK444

Abstract: BUK444-200A BUK444-200B
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK416-100BE

Abstract: 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE
Contextual Info: Power Devices Power MOSFET Transistors General Purpose in order of Voltage/Ros on (corn.) V „s MAX (V) Type No. Package Outline Iq max Ptot max (W> Rq S ON max (A) ( ft) 60 60 60 60 60 BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A SO T-186* SOT-93

buk7530-55

Abstract: mosfet-n SOT166 TOPFET buk7530
Contextual Info: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263

transistor bu

Abstract: K444
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Mosfet catalogue

Abstract: mosfet 200A buk444 200B 220AB
Contextual Info: Philips Semiconductors Concise Catalogue 1996 PowerMOS transistors including TOPFETs and IGBTs P O W E R S E M IC O N D U C T O R S POWERMOS TRANSISTORS INCLUDING TOPFETS ^D S ^ D S o n (V) (O) 100 100 0.9 1.1 200 200 200 200 200 200 200 200 200 200 200

buk455

Abstract: BUK445-100A BUK444 50SP BUK854-500IS BUK854-500 BUK454
Contextual Info: Philips Semiconductors Replacement List REPLACED / WITHDRAWN TYPES The following type numbers were in the previous issue of this handbook, but are not in the current version: TYPE NUMBER BUK105-50L REPLACED BY REASON FOR DELETION see BUK104/106-50L BUK105-50LP

Zr 1100

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK444

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

bf0262a

Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A