BUK454 Search Results

Contextual Info: ESE D N AMER PHILIPS/DISCRETE bbSETEl 0QE0M70 5 • BUK454-500A BUK454-500B PowerMOS transistor ■■■■■a T"- 3 7 - U GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: N AMER ^ 1 = 53=131 3SE D P H IL IP S /D IS C R E T E 005041=5 1 BUK454-450B PowerMOS transistor r -3 7 - u QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUK454-400B

Abstract: T0220AB PPD-25
Contextual Info: N AMER b^E PHILIPS/DISCRETE D • hhS3^3l □□3Db2D BUK454-400B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SM PS , motor control, welding,

BUK454-600B

Abstract: T0220AB t 326 Transistor
Contextual Info: N AMER P H I L I P S / D I S C R E T E b^E D • □□3Dfc>3D TM2 ■ I APX b ¡35 3^31 Product Specification Philips Semiconductors BUK454-600B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.

BUK454-600A

Abstract: 1-fjv BUK454-600B T0220AB BUK454-600
Contextual Info: N AMER P H ILIP S /D IS C R E TE 2SE J> m t . bS3 * 13 1 QG2047S 4 • PowerMOS transistor BUK454-600A BUK454-600B r - 37-/1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK446-800B

Abstract: BUK551-100A BUK583 BUK555 600b BUK5
Contextual Info: Pow er Devices Power MOSFET Transistors General Purpose in order of Voltage/RDS on (cont.) VDS MAX (V) Type No. Package Outline Iq max (A) Ptot max (W) Rd s on max (ft) 500 500 500 600 600 600 600 600 600 BUK438-500B BUK417-500BE BUK417-500AE BUK454-600B

Contextual Info: BUK454-200A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)30 I(D) Max. (A)9.2 I(DM) Max. (A) Pulsed I(D)6.5 @Temp (øC)100 IDM Max (@25øC Amb)3.6 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)90 Minimum Operating Temp (øC)

Contextual Info: BUK454-600B Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)2.6 I(DM) Max. (A) Pulsed I(D)1.6 @Temp (øC)100 IDM Max (@25øC Amb)10.4 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

Contextual Info: BUK454-600A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)600 V(BR)GSS (V)30 I(D) Max. (A)2.8 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

BUK454-200A-B

Abstract: BUK454-200B T0220AB
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION BUK454-200A/B QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for use in surface mount applications. The device is intended for use in

Contextual Info: BUK454-500A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)30 I(D) Max. (A)3.7 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

Contextual Info: BUK454-200B Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)200 V(BR)GSS (V)30 I(D) Max. (A)8.2 I(DM) Max. (A) Pulsed I(D)5.8 @Temp (øC)100 IDM Max (@25øC Amb)33 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)90 Minimum Operating Temp (øC)

Contextual Info: BUK454-450B Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V)30 I(D) Max. (A)3.7 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

Contextual Info: BUK454-800A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)800 V(BR)GSS (V)30 I(D) Max. (A)2.4 I(DM) Max. (A) Pulsed I(D)1.5 @Temp (øC)100 IDM Max (@25øC Amb)9.5 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)85 Minimum Operating Temp (øC)

BUK454-500B

Abstract: BUK454 BUK454-500A T0220AB
Contextual Info: Philips Components BUK454-500A BUK454-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

transistor bo 244

Abstract: BUK454-450B T0220AB
Contextual Info: N AMER P H I L I P S / D I S C R E T E 2SE D • ^53=131 00204b5 PowerMOS transistor 1 ■ BUK454-450B r -3 7 - GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

TRANSISTOR FS 10 TM

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION BUK454-200A/B QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for use in surface mount applications. The device is intended for use in

Contextual Info: BUK454-650A Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)650 V(BR)GSS (V)30 I(D) Max. (A)2.8 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

BUK454-400B

Abstract: BUK454 BUK454-400A T0220AB
Contextual Info: BUK454-400A BUK454-400B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BUK454-200A

Abstract: BUK444-200A BUK454-200B
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION BUK454-200A/B QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for use in surface mount applications. The device is intended for use in

Contextual Info: bbS3=l31 0030475 4 SSE D N AMER PHI LIP S/DISCRETE BUK454-600A BUK454-600B PowerMOS transistor T - 37 - 1 1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUK454-450B

Abstract: T0220AB
Contextual Info: N AMER PHILIPS/DIS CRET E 2SE D • ^53=131 00204b5 1 ■ PowerMOS transistor BUK454-450B r - 3 7 - GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

JZ2 transistor

Abstract: 1S93 BUK454-500B T0220AB ADl40
Contextual Info: bSE J> PHILIPS INTERNATIONAL 711Qfl2b O O b H Q b l 2 ^ Philips Semiconductors BUK454-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK454-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS ,