BUL52AFI Search Results
BUL52AFI Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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BUL52AFI |
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ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | Original | 64.56KB | 4 |
BUL52AFI Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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MIL npn high voltage transistor 500VContextual Info: Mil = ^ = INI BUL52AFI SEME LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 Designed for use in electronic ballast applications 3.6 Dia. • SEMEFAB DESIGNED AND DIFFUSED DIE 1 2 3 |
OCR Scan |
BUL52AFI T0220 MIL npn high voltage transistor 500V | |
SEM-E
Abstract: transistor VCE 1000V to220 01455 NPN Transistor VCEO 1000V vce 500v NPN Transistor BUL52AFI transistor 500v 0.5a
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Original |
BUL52AFI SEM-E transistor VCE 1000V to220 01455 NPN Transistor VCEO 1000V vce 500v NPN Transistor BUL52AFI transistor 500v 0.5a | |
T0251
Abstract: T0-251
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OCR Scan |
BUL47A BUL47B BUL48A BUL48B BUL49A BUL49B BUL50A BUL50B BUL51A BUL51B T0251 T0-251 | |
Contextual Info: SEME BUL52AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 Designed for use in electronic ballast applications 15.1 3.6 Dia. • • • • 1 2 3 14.0 1.3 0.85 SEMEFAB DESIGNED AND DIFFUSED DIE |
Original |
BUL52AFI | |
NPN 250W
Abstract: BUL50A-T247 NPN 400V 40A BUR13 BUL58
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Original |
BUL47" BUL47A BUL47B 20MHz BUL50" BUL50A BUL50A-T247 BUL50B 10MHz NPN 250W NPN 400V 40A BUR13 BUL58 | |
Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
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Original |
2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN |