BUL57A Search Results
BUL57A Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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BUL57A |
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ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR | Original | 19.74KB | 2 | |||
BUL57ASMD |
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Bipolar NPN Device in a Hermetically Sealed Ceramic Surface Mount Package for High Reliability Applications | Original | 10.12KB | 1 |
BUL57A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: HIGH POWER SILICON NPN TRANSISTOR BUL57AN2A, BUL57AN2B • High Voltage, High Current • Hermetic Ceramic Surface Mount Package • Ideally Suited For Electronic Ballast, Switch Mode Power Supply Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated |
Original |
BUL57AN2A, BUL57AN2B BUL57AN2B-JQRS | |
BUL57ASMDContextual Info: BUL57ASMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed |
Original |
BUL57ASMD O276AB) 15-Aug-02 BUL57ASMD | |
Contextual Info: SEME BUL57A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • 1 2 3 14.0 1.3 0.85 |
Original |
BUL57A | |
electron cvpContextual Info: HIGH POWER SILICON NPN TRANSISTOR BUL57AN2A, BUL57AN2B • High Voltage, High Current • Hermetic Ceramic Surface Mount Package • Ideally Suited For Electronic Ballast, Switch Mode Power Supply Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated |
Original |
BUL57AN2A, BUL57AN2B BUL57AN2B-JQRS electron cvp | |
22a ic
Abstract: Electronic ballast 80W BUL57A ballast 80W
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Original |
BUL57A 22a ic Electronic ballast 80W BUL57A ballast 80W | |
T0251
Abstract: T0-251
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OCR Scan |
BUL47A BUL47B BUL48A BUL48B BUL49A BUL49B BUL50A BUL50B BUL51A BUL51B T0251 T0-251 | |
Electronic ballast 80WContextual Info: Mil = ^ = INI BUL57A SEME LAB MECHANICAL DATA Dimensions in mm 4.5 10.2 , f*-► f*-1.3 ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE |
OCR Scan |
BUL57A T0220 Electronic ballast 80W | |
NPN 250W
Abstract: BUL50A-T247 NPN 400V 40A BUR13 BUL58
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Original |
BUL47" BUL47A BUL47B 20MHz BUL50" BUL50A BUL50A-T247 BUL50B 10MHz NPN 250W NPN 400V 40A BUR13 BUL58 | |
2n3866s
Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
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OCR Scan |
BYV34-300SM BYV34-400ASM BYV34-- 400RSM 400SM BYV34-500ASM BYV34-500RSM BYV34-500SM LM137-SM 2n3866s DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82 | |
Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
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Original |
2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN | |
bup43Contextual Info: IMI i ^= IDI Sem elab Power M anagem ent Division BI-POLAR POWER TRANSISTORS PRIME SALES TYPES R ei. P ackage v ce/ P a rt No. O p tio n s P o la rity V CEO BUL46A / NPN BUL46B / BUL47A BUL47B PD Type h FE / ' c 500 le 7 10min 4/8 20M 200 T O -3 NPN 400 25 |
OCR Scan |
BUL46A BUL46B BUL47A BUL47B BUL48A BUL48B BUL49A BUL49B BUL50A BUL50B bup43 | |
bup4
Abstract: bup57 bup44
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OCR Scan |
BUP52 BUP54 T0247 BUP56 BUP59 bup4 bup57 bup44 |