BUP41 Search Results

Contextual Info: SIEMENS BUP410D IGBT With Antiparallel Diode « Preliminary data A • Low forward voltage drop T • • High switching speed /X V % / ,.,íí Í • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Pin 3 E C Type ^CE h

BUP41

Abstract: BUP40 LE17
Contextual Info: SEMELAB LTD 37E 0133107 D 000D1SD SEM ELAB JUN 2 6 195/ BUP41 NEW PRODUCT S ILIC O N NPN MECHANICAL DATA EPITAXIAL PLANAR 2.8 It.I max. o 7 .8 . max. 3.2, 31 3.75 FEATURES nnn • Very low V ce sat 1.2 • High gain at high current T 2 .5 4 max. 15.3 min.

BUP41

Abstract: LE17
Contextual Info: SEMELAB 3 Gol-ô<fS NEW PRODUCT BUP41 SILICON NPN EPITAXIAL PLANAR MECHANICAL DATA Dimensions in m m FEATURES • VERY LOW VcE sat 3.75 • HIGH GAIN AT HIGH CURRENT • VERY FAST SWITCHING • PNP COMPLEMENT BUP 40 c : b ¿.58 [*- LO.5 0.88, 2.29 max TO 126

bup410d

Abstract: BUP41
Contextual Info: SIEMENS BUP 41 OD IGBT With Antiparallel Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type BUP410D ^CE 600V 13A C Pin 3 E Package Ordering Code

Magnatec

Abstract: BUP41 fast switching pnp transistor 3A 60V "NPN Transistor" BUP40 LE17 npn transistor
Contextual Info: SILICON EPITAXIAL PLANAR NPN TRANSISTOR Tfelectronics MAGNATEC ¡^ ] BUP41 • PNP C om plim ent BUP40 • High Gain at High Current • Very fast Switching ABSOLUTE M A X IM U M RATINGS T a = 2 5 °C unless otherwise stated v CBO Collector - Base Voltage

VPT05155

Abstract: bup410d
Contextual Info: SIEMENS SGP04N60 P relim in ary d ata IGBT • Low forward voltage drop • High switching speed VPT05155 • Low tail current 1 • Latch-up free • Avalanche rated Pin 1 Pin 2 G Type VCE SGP04N60 600V 4A Pin 3 E C Package Ordering Code TO-220 AB Q67040-A . . . .

BUP314

Abstract: BUP307 igbt types siemens bup314 BUP401 BUZ334 BUZ MOSFET MOSFET welding INVERTER 334 mosfet flyback inverter welding
Contextual Info: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Michael Herfurth ● Michael Schmitt High-speed IGBTs: Fast switching at an attractive price Developed from secondgeneration IGBTs, highspeed IGBTs insulated gate bipolar transistors are particularly economical for

Contextual Info: Preliminary data SIEMENS SGP02N60, SGB02N60, SGD02N60, SGU02N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:

SIEMENS dpak diode

Contextual Info: Preliminary data SIEMENS SGP04N60, SGB04N60, SGD04N60, SGU04N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:

SGP02N60

Abstract: SGU02N60 SGB02N60 SGD02N60 BUP410D
Contextual Info: Preliminary data SGP02N60, SGB02N60, SGD02N60, SGU02N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications:

BUP410D

Abstract: SGB06N60 SGD06N60 SGP06N60 SGU06N60
Contextual Info: Preliminary data SGP06N60, SGB06N60, SGD06N60, SGU06N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications:

leistungstransistoren

Abstract: bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314
Contextual Info: SIEMENS Gehäuseübersicht Package Information N-Kanal Leistungstransistoren N Channel Power Transistors D i A PN \ ° s TO-220 AB *D S ^ D S o n V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 Q 10 18 23 28 m

Contextual Info: MODEL: BU-P4160 Bulkhead Female BNC Receptacle MATERIALS: Body - Brass, Tarnish resistant plating, Center Contact - Gold plated Beryllium copper Dielectric - PTFE RATING: 50 Ohms Impedance 30 VAC/60VDC Max shield/earth 500 VRMS Inner conductor/shield Temperature: -70°C to 170°C

2A mosfet igbt driver stage

Abstract: igbt qualification circuit S-IGBT igbt 600V IGBT 600V 16 siemens igbt UPS SIEMENS zvs flyback driver BUP410 SGP06N60
Contextual Info: TECHNOLOGY A MOSFET alternative for switching frequencies up to more than 300 kHz High-speed 600V IGBT in NPT technology Because of its many advantages over PT technology, NPT technology has gained increasing acceptance for IGBTs with breakdown voltages of over 1 kV. Siemens is now continuing this logical progression with

Contextual Info: SIEMENS SGP02N60 P re lim in a ry data IGBT • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 E C Type VCB h Package Ordering Code SGP02N60 600V 2A TO-220 AB Q67040-A . . . . Maximum Ratings Parameter Symbol Collector-emitter voltage ''CE Collector-gate voltage

siemens igbt

Contextual Info: SIEMENS SGD04N60 P re lim in a ry data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated SGD04N60 Ul Type 600V h Package Ordering Code 4A P-T0252 Q67040-A . . . . Maximum Ratings Parameter

Contextual Info: Preliminary data SIEMENS SGP06N60, SGB06N60, SGD06N60, SGU06N60 Fast S-IGBT in NPT-Technology • 75 % lower E0ff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 is • Designed for moderate and high frequency applications:

Contextual Info: BU-P4115 SHORTING BAR MATERIAL; Nickel Plated Brass Parts are packaged (10) per Bag Mueller Electric Company 1208 Massillon Rd. Sie. N-1500 Akron, OH 44306-4524 www.muellerelectric.com K> to ro RoHS Compliant Toll: 800.955. Phone: 330.780. Fax: 330.780.

SGP02N60

Abstract: BUP410D
Contextual Info: SGP02N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGP02N60 600V 2A TO-220 AB Q67040-A . . . . Maximum Ratings

Q67041-A4709

Abstract: BUP410D SGP06N60
Contextual Info: SGP06N60 Preliminary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 1 Pin 2 G Pin 3 C E Type VCE IC Package Ordering Code SGP06N60 600V 6A TO-220 AB Q67041-A4709-A2 Maximum Ratings

bup41

Contextual Info: SIEMENS SGP06N60 P relim inary data IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE b Package Ordering Code SGP06N60 600V 6A TO-220 AB Q67041-A4709-A2 Maximum Ratings Parameter

BUP410D

Abstract: SGD04N60 SGB04N60 SGP04N60 SGU04N60 SIEMENS dpak diode
Contextual Info: Preliminary data SGP04N60, SGB04N60, SGD04N60, SGU04N60 Fast S-IGBT in NPT-Technology • 75 % lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time 10 µs • Designed for moderate and high frequency applications:

BU930

Abstract: SOT93 BU409 BU500 BU606 BU930P T0220 BU4090 BU800 BU912
Contextual Info: Type No. Ó“ ' «•*» Package v CEO ■c PD hFE« V ce /'C 7 7 7 5/1 5/1 5/1 5/0.6 5/0.6 10M 10M 10M 6M 6M 60 60 60 70 70 6M 70 75 125 125 cont BU408D BU409 BU409D BU426 BU426A NPN NPN NPN NPN NPN T0220 T0220 T0220 SOT 9 3 SOT93 200 375 400 6 6 5min 5min

BUP40

Abstract: BUP41 LE17
Contextual Info: SEMELAB 3?E LTD D 6133107 D0G014Ô SEMELAB JUN 2 6 1987 BUP40 EW PRODUCT 'U S I L I C O N PNP MECHANICAL DATA EPITAXIAL PLANAR 2.8 .7 .8 . m ax. 3-2l 3.0 j 3.75 -¿ J t 11.1 m ax. FEATURES • Very low V ce sat TUU T ÜÜÜ , 1.2 • High gain at high current