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    BUV26AF Search Results

    BUV26AF Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BUV26AF Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BUV26AF Philips Semiconductors V(cesm): 200V V(ceo): 100V 10A 18W 40ns silicon diffused power transistor Scan PDF

    BUV26AF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUV26F

    Abstract: BUV26AF
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUV26F/AF DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 90V(Min)- BUV26F 100V(Min)- BUV26AF ·High Switching Speed APPLICATIONS ·Designed for fast switching applications such as high


    Original     		PDF BUV26F/AF BUV26F BUV26AF BUV26F BUV26AF

    b0743

    Abstract: KT819A B0545 BOT54 PT9784 2N3055-5 mje1660 40636 1561-0403 044VH4
    Text: POWER SILICON NPN Item Number Part Number I C 5 .- 10 15 20 >= 30 PT9784A 2N3055/5 SPT3713 SOT9210 044VH1 BLW97 40325 2SC2609 ~~~~~~ 35 40 45 50 S01480 B0142 S3771 BOX13 BOX13 BOX13 40251 MJ2801 MJ2801 MJ2801 KT819A 1561-0403 1561-0404 1561-0404 BOX13/40251


    Original     		PDF BUV26A BUV26AF EST062S EUT069 EUT069R EUT069RS EUT069S BUW17 BUW44 b0743 KT819A B0545 BOT54 PT9784 2N3055-5 mje1660 40636 1561-0403 044VH4

    D988

    Abstract: BUV26F Scans-00459 0031G73 max 1988 SWITCHING SYSTEMS INTERNATIONAL 26AF BUV26AF
    Text: PHILIPS INTERNATIONAL MSB D ca 711Ga5b 0Q31G73 3 Q P H I N _ BUV26F BUV26AF J1 T - 3 3 - 0 7 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a S O T 186 envelope w ith electrically isolated mounting base, intended for use in converters, inverters, switching regulators, m otor control


    OCR Scan     		PDF 711GaSb 0031G73 BUV26F BUV26AF T-33-07 OT186 BUV26F 711002b D988 Scans-00459 max 1988 SWITCHING SYSTEMS INTERNATIONAL 26AF BUV26AF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b5E D • bb53531 0DSfl452 171 I IAPX BUV26F BUV26AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope w ith electrically isolated mounting base, intended fo r use in converters, inverters, switching regulators, m otor control


    OCR Scan     		PDF bb53531 0DSfl452 BUV26F BUV26AF OT186

    26AF

    Abstract: BUV26AF BUV26F IEC134 0le30 vqe 14 display
    Text: PHILIPS INT ERNATIONAL MSE » O 711Ga5b DQ31G73 3 EJPHIN BUV26F BUV26AF T-33-07 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a S O T 186 envelope w ith electrically isolated mounting base, intended for use in converters, inverters, switching regulators, m otor control


    OCR Scan     		PDF 711Ga5b DQ31G73 BUV26F BUV26AF T-33-07 OT186 BUV26F BUV26AF) 26AF BUV26AF IEC134 0le30 vqe 14 display

    Z944

    Abstract: 26AF BUV26AF BUV26F 2u45
    Text: J> m b^E N AUER PHIL I P S / D I S C R E T E bb53^31 □□SÖ4SS 171 I IAPX '' BUV26F BUV26AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope w ith electrically isolated mounting base, intended fo r use in converters, inverters, switching regulators, m otor control


    OCR Scan     		PDF BUV26F BUV26AF OT186 BUV26F) BUV26AF) BUV26F P264slà Z944 26AF BUV26AF 2u45

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11