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Siemens BUW58 TRANS GP BJT NPN 160V 20A Power Bipolar Transistor, 20A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 2 Pin
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	BUW58		160			1 - 10 - 100 - 1000 - 10000 -	Get Quote

BUW58 Datasheets (8)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
BUW58		Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package		Original	PDF	10.99KB	1
BUW58		Unknown	Semiconductor Master Cross Reference Guide		Scan	PDF	119.25KB	1
BUW58		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF	80.61KB	1
BUW58		Unknown	Shortform Transistor Datasheet Guide		Short Form	PDF	84.25KB	1
BUW58		Unknown	Shortform Transistor PDF Datasheet		Short Form	PDF	160.36KB	1
BUW58		Unknown	Diode, Transistor, Thyristor Datasheets and more		Scan	PDF	43.68KB	1
BUW58		Semelab	Bi-Polar Transistors (CECC and High Rel) & High Energy		Scan	PDF	39.59KB	1
BUW58		Siemens	Semiconductor Data Book (German) 1976/77		Scan	PDF	87.75KB	3

BUW58 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BUW58 Contextual Info: BUW58 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	BUW58 O204AA) 31-Jul-02 BUW58	PDF
Contextual Info: , Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BUW58 Silicon NPN Transistors IB 2E 3C Features With TO-3 package Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCB Collector to base voltage	Original	BUW58 100mA;	PDF
Contextual Info: BUW58 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	BUW58 O204AA) 18-Jun-02	PDF
U 1560 Abstract: BUX24-RC BUX51 Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUW58 BUW60 BUW61 BUW62 BUW73 BUW74 BUW75 BUW76 BUW77 BUW81 BUW81A BUW89 BUW90 BUW91 BUW92 BUX10 B U X 10C ECC BUX10P BUX11 BUX11 CE C C BUX11N BUX11P BUX12 B U X 12C EC C BUX12P BUX13 BUX13 CE C C	OCR Scan	BUW58 BUW60 BUW61 BUW62 BUW73 BUW74 BUW75 BUW76 BUW77 BUW81 U 1560 BUX24-RC BUX51	PDF
Contextual Info: BUW58 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	BUW58 O204AA) 16-Jul-02	PDF
BDW16 Abstract: SM3159 2N2753 str16 SM317 2U75 2N1826 BUV41 Contextual Info: POWER SILICON NPN Item Number Part Number I C -5 10 15 20 30 35 40 45 50 -60 70 75 - 80 140 140 150 150 150 150 150 150 150 150 ~~6~~~~ ~e.!naex ~g ~~g 20 20 20 20 20 20 20 20 150 150 160 160 160 160 160 160 20 30 ~g ~~g 20 20 20 20 20 20 20 20 160 160 160	Original	MJ15003 RCA8638C SML8753 SML8757 2N1825 2N2125 2N2741 2N2747 2N2753 2N2817 BDW16 SM3159 str16 SM317 2U75 2N1826 BUV41	PDF
JE350 Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55 Contextual Info: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168	OCR Scan	BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 JE350 je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
STRS6307 Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020 Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173	Original	2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020	PDF
bd130 Abstract: BDY57 BLX84 BD142 BLx18 13 6 npn BDY20 BDY29 BDY94 BLX36 Contextual Info: IC VCEO Device Cont. Polarity MAX Type MAX VOLTS AMPS BD130 NPN 15.0 60 BD142 NPN 15.0 45 BDY20 NPN 15.0 60 BDY29 NPN 30.0 75 BDY37 NPN 16.0 140 BDY38 NPN 6.0 40 BDY39 NPN 15.0 60 BDY55 NPN 15.0 60 BDY56 NPN 15.0 120 BDY57 NPN 25.0 80 BDY58 NPN 25.0 125	Original	BD130 BD142 BDY20 BDY29 BDY37 BDY38 BDY39 BDY55 BDY56 BDY57 BLX84 BLx18 13 6 npn BDY94 BLX36	PDF
APY12 Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367 Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP	OCR Scan	Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367	PDF