"Tektronix 475"
Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,
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48/BUX
BUX48
BUX48A
AMPERE32
TIP73B
TIP74
TIP74A
TIP74B
TIP75
TIP75A
"Tektronix 475"
equivalent 2n6488
TIP42C EQUIVALENT
BU108
motorola darlington power transistor
motorola 266 TO-204AA transistor
D45H11 equivalent replacement
pnp bux
TRANSISTOR REPLACEMENT table for transistor
tip3055 equivalent
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sf 818 d
Abstract: NPN 337 SU 179 sf 819 d SF 127 Funkamateur SMD NF sf 118 d sd 339 NF 847 G
Text: IC, ICsat [mA, A ] 600 -100 -100 -100 -100 100 100 100 100 100 100 -100 -100 -100 100 100 100 -100 -100 -100 (1) (-1) (1) (-1) (1) (-1) (3) (1,5) (-1,5) (1,5) (-1,5) (1,5) (-1,5) * [MHz] ≥ 250 90 90 90 90 ≥ 300 ≥ 300 145 145 161 175 350 350 350 185
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BUX86
Abstract: BUX87 Q68000-A3870 Q68000-A5167 S400
Text: 25C J> • ÖEBSbQS 00QMÖ72 3 « S I E G • j^35-Of NPN Silicon High Voltage Switching Transistors BUX 86 BLfX 87 - SIEMENS AKTIENüESELLSCHAF - BUX 86 and BUX 87 are NPN silicon epibase power switching transistors in TO 126 plastic
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f-35-Of
Q68000-A3870
Q68000-A5167
80tal
MMs60Â
c3MS60Â
235b05
000Ma75
BUX86
fl23SbQS
BUX86
BUX87
Q68000-A3870
Q68000-A5167
S400
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0T33
Abstract: No abstract text available
Text: 25C » m ÖEBSbQS 00QMÖ72 3 « S I E G • j~~35-0? NPN Silicon High Voltage Switching Transistors BUX 86 BLfX 87 - SIEMENS AKTIENüE SE LL SC HA F -BUX 86 and BUX 87 are NPN silicon epibase power switching transistors in TO 126 plastic
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8000-A
Q68000-A5167
0-T-33-O9
caMS60`
335b05
BUX87
000447b
l-r-33-ff
BUX86
0T33
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Untitled
Abstract: No abstract text available
Text: N A HER PHILIPS/DISCRETE b lE bbS3131 0027bl7 TM1 BUX/b BCX79 I> l P-N-P SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon planar epitaxial transistors in a plastic TO-92 envelope. N-P-N complementary types are BCX58 and BCX59. QUICK REFERENCE DATA BCX78
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bbS3131
0027bl7
BCX79
BCX58
BCX59.
BCX78
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ESM750A
Abstract: ESM750 esm952a BUW38 ESM952 BUX40 BUX48
Text: o metal power transistors transistors de puissance métalliques THOMSON-CSF ç / 'B td + tr typ» max A (W) 1 (A) = 1,5V min I maxl •Caff* (V) * V CE Ul O > P to t O NPN ■c cont Ul v CEO VCEX* S Type (V) max (A) (A) (llS) switching transistors BDY 26(183
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BUX48
CB-19
CB-159
CB-19)
CB-159)
ESM750A
ESM750
esm952a
BUW38
ESM952
BUX40
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bux c
Abstract: BUX23 BUW38 ESM750A BUV18 ESM750 ESM952A BUV19 BUX13 BUX42
Text: lc sat est valeur du courant collecteur de fonctionnement recommandée. Les temps de commutation fw, tr, ts et t f et la tension de saturation collecteur-émetteur VcfYsafV sont j _ i . '_ j i s^cror/m uaiid //i/d tivm,co a i ç (sat)" rO Cn SUPERSWITCH transistor TO-3 selector guide
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BUW38
BUX48
CB-19
CB-159
CB-19)
bux c
BUX23
BUW38
ESM750A
BUV18
ESM750
ESM952A
BUV19
BUX13
BUX42
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BUX 127
Abstract: bdw 51 52 BDX 241 mje 3001 BUX 115 8D243C TIP 107 bdx 679 BUX 34 BD 139 140
Text: POWER DISCRETE DEVICES ALPHA • NUMERICAL INDEX Typ« BD 135 BD 136 BD 137 BD 138 BD 139 BD 140 BD 142 BD 175 BD 176 BD 177 BD 178 BO 179 BD 180 BD 181 BD 182 BD 183 BD 233 BD 234 BD 235 BD 236 BD 237 BD 238 BD 239 BD 239A BD 239B BD 239C BD 240 BD 240A BD 240B
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BD244B
BD379
BD380
BD434
BD435
BD440
BD681
BD682
BD712
BD905
BUX 127
bdw 51 52
BDX 241
mje 3001
BUX 115
8D243C
TIP 107
bdx 679
BUX 34
BD 139 140
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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SDT 9202
Abstract: bdx 338 BU 450 bdx
Text: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74
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BUV62
Abstract: bux c
Text: THOMSON MIL ET SPATIAUX 5SE ]> Wt TDSbôTE □ DOGM'ìD ÔTT • THCM 'T '- j y ~ } f DISCRETE COMPONENTS o o DESCRIPTION PRODUCT PACKAGE .£ o “O l-o 80 <! ö BIPOLAR POWER TRANSISTORS BUT 90 VCEO sus = 125 V 1C = 50 A ■ BUT 91 VC EO (sus) = 200 V 1C = 50 A
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T03modified*
BUT92A
BUT100
BUT102
BUV18
BUV19
BUV26
BUV28
BUV39
BUV40
BUV62
bux c
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BC 641
Abstract: bc 207 npn BC190 bu 1011 ET 3005 h21e BU 208 BC140 BC190B bc107
Text: Silicon N PN transistors, general purpose continued Tam b = 25 <>C Transistors N P N silicium, usage général (suite) <5 v CEO Case ^tot (mW) (V) h2 lE VcER* h2 lE * VCE X ° min >C v CEsat (V) max ImA} ft (ns) (MHz) 'off* max max l C/lB (mA> min TSi 76
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Untitled
Abstract: No abstract text available
Text: THOMSON MIL E T SPATIAUX SSE D • TD2bö7B ODOGHTO ÔTT ■ T H C M ' T ' - j y * f DISCRETE COMPONENTS DESCRIPTION PRODUCT PACKAGE o o ■ti» o .E o “O •*> SÖ <Ö BIPOLAR POWER TRANSISTORS BUT 90 V C E O = 125 V 1C = 5 0 A ■ BUT 91 V C E O (s u s ) = 2 0 0 V
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BUT92A
BUV18
BUV19
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BUV93
Abstract: TU F 13003 BUV95 to-220 weight X 13003 13002 TO-92 13003 TO-92 13007 TE13002 13003
Text: TELEFUNKEN ELECTRONIC filC D WM fi^SOCHb ODDSb43 1 • ALG6 POWER CONVERSION TRANSISTORS TELEFUNKEN electronic designs its high voltage power transistors for efficient operation in the full range of switching power supply, and switching amplifier topologies associated
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OOOSb43
-Wt--214-
BUV93
TU F 13003
BUV95
to-220 weight
X 13003
13002 TO-92
13003 TO-92
13007
TE13002
13003
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BUD48
Abstract: BUD48DI BUD 48 BUX23 BUV41 BUV40 BUW38 BUW52 bux348 TR MJE 350
Text: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL M0 glJ3 ILdOT©[ l(SS POWER BIPOLAR FAST SWITCHING TRANSISTORS AND DARLINGTONS Internal schematic diagrams Darlingtons except BUD 48 Dl Bipolar transistors 120 / 300 V VCBO RANGE •c Vc b O v CEO ptot <A) (V) (V)
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D44Q1
D44Q3
D44Q5
BUV27
BUD48
BUD48DI
BUD 48
BUX23
BUV41
BUV40
BUW38
BUW52
bux348
TR MJE 350
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Transistoren DDR
Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369
Text: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60
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SCE237
SCE238
SCE239
SCE308
Transistoren DDR
vergleichsliste
TELEFUNKEN bux 127
aktive elektronische bauelemente ddr
BUX 127
SF 127
vergleichsliste DDR
"vergleichsliste"
bauelemente DDR
sf 369
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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BF872S
Abstract: transistors bf 423
Text: TELEFUNKEN ELECTRONIC T> Ö1C X ' 2 3~&l ò 'ìaotn b DDQSbMS 5 H A L 6 6 Video and Auto Ignition Transistors Video Transistors and Auto Ignition Transistors fill in the application gaps between the high voltage, high speed, low gain switches and the more conventional low voltage, high
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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BDX33C darlington pair
Abstract: 40349 transistor BDY29 2N3773 transistor 2N3055 RCA 528 2n3771 2N3772 RCA RCA transistor 2n3055 RCA 40250
Text: Ic to 80 A . . . P t to 300 W . . . V c E to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* le a 1 .S A max. PT - 8.7S W m u . TO-391* A i t . AAi 9U X 9U lc » 3.S A max. P y « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max.
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ITO-391-
ITO-220)
O-661â
ITO-2201
O-2201
ITO-31
130x130
BDX33C darlington pair
40349
transistor BDY29
2N3773 transistor
2N3055
RCA 528
2n3771
2N3772 RCA
RCA transistor 2n3055
RCA 40250
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RCA 40250
Abstract: RCA 40250 transistor 2N3055 ST rca 2n6254 Transistor 40347 transistor RCA 528 st bux RCA 528 40250 RCA 2N6259 RCA
Text: Ic to 80 A . . . P t to 300 W . . . V c E to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.
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ITO-391-
ITO-220)
O-661â
ITO-2201
O-2201
ITO-31
130x130
RCA 40250
RCA 40250 transistor
2N3055 ST
rca 2n6254
Transistor 40347
transistor RCA 528
st bux
RCA 528
40250 RCA
2N6259 RCA
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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rca 2n6103
Abstract: 2N6101 rca 2N6476 rca RCA 40250 transistor Bf 353 RCA 411 TRANSISTOR TT 2070 2N1482 2N3054 2N5298
Text: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le a 1 .S A max. <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* PT - 8.7S W m u . TO-391* lc » 3.S A max. P y « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max. < T 0 6 6 *
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ITO-391-
ITO-220)
O-661â
ITO-2201
O-2201
ITO-31
130x130
rca 2n6103
2N6101 rca
2N6476 rca
RCA 40250 transistor
Bf 353
RCA 411
TRANSISTOR TT 2070
2N1482
2N3054
2N5298
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RCA 528
Abstract: 2n3055 complement rca 2n3771 40349 transistor RCA 528 Transistor PJ 257 2n5578 RCA 2N3055 transistor 2n3772 complement 2N3055 RCA
Text: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* le a 1 .S A m ax. P T - 8 .7 S W m u . TO-391* A it . . A A i 9U X 9U lc » 3 .S A m ax. P y « 10 W m ax. (TO-391* lc * 4 A m ax.
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ITO-391-
ITO-220)
O-661â
ITO-2201
O-2201
ITO-31
130x130
RCA 528
2n3055 complement
rca 2n3771
40349
transistor RCA 528
Transistor PJ 257
2n5578
RCA 2N3055 transistor
2n3772 complement
2N3055 RCA
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