BCX79 Search Results

Contextual Info: BCX79 PNP General Purpose Amplifier T h is d e v ic e is d e s ig n e d fo r u s e a s g e n e ra l p u rp o s e a m p lifiers a n d sw itches requiring collector currents to 3 0 0 m A. S o u rc e d from P ro c e s s 6 8 . S e e P N 2 0 0 A fo r c h a ra c te ristics .

Q62702-C629

Abstract: BCX79 A2030V transistor C632 BCX78 Q62702-C626 Q62702-C627 Q62702-C628 Q62702-C632 Q62702-C633
Contextual Info: BCX78, BCX79 PNP Transistors for AF pre- and driver stages as w ell as switching applications P re lim in a ry d a ta BCX 78 and BCX79 are epitaxial PNP silicon planar transistors in a plastic package strip-line design 10 A 3 DIN 41 868 (sim. SOT-30). The transistors are suitable for

BCX79

Abstract: PN200A
Contextual Info: .rrrn rî BCX79 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. S ee P N 2 0 0 A for characteristics. Absolute Maximum Ratings* ta = 25°c unless otherwise noted

bcx78

Abstract: BCX79-8
Contextual Info: MOTOROLA SC XSTRS/R 1EE F 0 I b3t,7E 54 OOÔS^Qb I r - a i- a / BCX78-7L,-8L,-9L,-1GL BCX79-7L,-8L,-9L,-10L - MAXIMUM RATINGS Sym bol BO X 78 BCX 79 U n it Collector-Em itter Voltage VCEO 32 45 Vdc Collector-B ase Voltage V CBO 32 45 Em itter-Base Voltage

BCX58

Abstract: BCX59 BCX78 BCX79 bcx58 transistors
Contextual Info: BCX58 BCX59 PHILIPS INTERNATIONAL SbE D Bi 711002b 0042000 SbT « P H I N T -2-7-0^ N-P-N SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in a plastic TO-92 envelope. P-N-P complementary types are BCX78 and BCX79. QUICK REFERENCE DATA

BC560AP

Abstract: 2sa720 semi KT313A LOW-POWER SILICON PNP BC212AP KT313B BC454C 2SA1115 tBc560b MM1614
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 BCY79A BCY79A A5T3504 2N4452 2N4452 2N4452 BCl77-6 BCl77-6 BCY79B BCY79B ~g~~~~111 15 20 BCl77B BC204B BC416A BC416B BC416AP BC416P BC251B BC261B ~g~~~~ 25 30 BCY79C BC416BP BCX79X BC251C BC251C

Contextual Info: BCX79 BCX79 E B TO-92 C PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200A for characteristics. Absolute Maximum Ratings* Symbol

BCX598

Contextual Info: BCX58 BCX59 N-P-N SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in a plastic TO-92 package. P N -P complementary types are BCX78 and BCX79. Q U IC K R E F E R E N C E D A T A BCX58 Collector-emitter voltage open base V CE 0

Contextual Info: N A HER PHILIPS/DISCRETE b lE bbS3131 0027bl7 TM1 BUX/b BCX79 I> l P-N-P SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon planar epitaxial transistors in a plastic TO-92 envelope. N-P-N complementary types are BCX58 and BCX59. QUICK REFERENCE DATA BCX78

BCX78

Abstract: BCX79 BCX58 BCX59
Contextual Info: BCX78 BCX79 J . PHILIPS i n t e r n a t i o n a l SbE ]> 711Gö2b 0042004 10S M P H I N P-N-P SILICO N PLANAR EPITAXIAL T R A N S IS T O R S T - 2 7 " # 6? P-N-P silicon planar epitaxial transistors in a plastic TO-92 envelope. N-P-N complementary types are BCX58 and BCX59.

BCX58

Contextual Info: 1 • N AMER PHILIPS/DISCRETE bTE D m bbS3T31 D0H7bm 333 I IAPX BCX58 BCX59 N-P-N SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in a plastic TO-92 envelope. P-N-P complementary types are BCX78 and BCX79. QUICK REFERENCE DATA

BCX79

Abstract: BCX78 BCX79-10 BCX79-8 BCX79-9 BCX78-10 BCX78-7 BCX78-8 BCX78-9 BCX79-7
Contextual Info: nOTOROLA SC -CXSTRS/R 6367254 i > H b 3 k 7 5 5 4 Doaivas S FJ MOTOROLA SC 960 CXSTRS/R F 81725 T -a ? -a BCX78,-7,-8,-9,-10 BCX79,-7,-8,-9,-10 M AXIM UM RATINGS Sym bol Rating BCX 78 BCX 79 Collector-Emitter Voltage VcEO 32 45 Vdc Collector-Base Voltage

Contextual Info: BCX79 BCX79 E B TO-92 C PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200A for characteristics. Absolute Maximum Ratings* Symbol

pn200a

Abstract: BCX79
Contextual Info: BCX79 E B TO-92 C PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

BCX58

Abstract: BCX59 BCX78 BCX79
Contextual Info: N AMER PHILIPS/DISCRETE bSE S • ^53^31 0 0 E 7 b m 232 I IAPX BCX58 BCX59 N-P-N SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon planar epitaxial transistors in a plastic TO-92 envelope. P-N-P complementary types are BCX78 and BCX79. QUICK REFERENCE D A T A

Contextual Info: BCX78 BCX79 P-N-P SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P silicon planar epitaxial transistors in a plastic TO-92 package. N-P-N complementary types are BCX58 and BCX59. Q UICK REFERENCE D A T A BCX79 BCX78 Collector-emitter voltage open base “ v CEO

BC557 pnp transistor

Abstract: BC551 BC307B BC327 BC327-10 BC327-16 BC327-25 BC327-40 BC557 BC557A
Contextual Info: T092 PLASTIC PACKAGE TRANSISTORS PNP Typ» No. VC80 (V) Min 50 BC307B {Ta=25°C, U n le s s O th e rw is e S p e c ifie d ) E le c tric a l C h a ra c te ristic s M a x im u m R a tin g s VCEO VEBO lC0O (V) Min (V) Min (uA) Max hFE ^ce (VI 45 lc & (mAl

pin configuration Bc327

Abstract: BC307B BC327 BC327-10 BC327-16 BC327-25 BC327-40 BC557 BC557A BC557C
Contextual Info: — CONTINENTAL DEVICE INDIA L.3E D • GG00124 S72 M C D I L TO-92 PLASTIC PACKAGE TRANSISTORS PNP Type No. BC307B (Ta=25°C, Unless Otherwise Specified) Electrical Characteristics Maximum Ratings VC80 VCEO V EBO 'CBO (V) Min (V) Min 00 Min (UA) Max 50

CS9013

Abstract: CS9011 CS9012 BC327 SOT 23-6 CS8050 BC547 CS9018 BF494 to-92 .y1 do-213ac
Contextual Info: Discrete POWER & Signal Technologies Pro Electron Diode Series Leaded Switching Diodes Device No. Vrrm I rrm V Min (nA) Min BAV19 BAV20 BAV21 BAV102 BAV103 100 150 200 150 200 100 100 100 100 100 BAW62 BAW76 BAX13 BAX16 BAY19 75 50 50 150 100 BAY71 BAY72

BF963

Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd
Contextual Info: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

F B0347

Abstract: b0349 BC184LB B0679 35S20 BDX330 B0242c f b0349 B0346 BD370-6
Contextual Info: Pro Electron Series in o PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET o Type No. BC107 BC107A Can Styl« TO-18 TO-18 VCES* v CBO (VI M in 50 50 v CEO (V) M in 45 45 v EB0 (V) M in 6 6 •c e s * 'CBO a InA) Max 15* 15* V CB IV) 50 50 H rh Ne 1 kH z *

BAV90

Abstract: bd139 smd PMBT2369A BF981 BF966 SMD 2n2907 smd BF980 2N4858 smd BFG65 BC547 smd
Contextual Info: N AMER PHILIPS/DISCRETE GbE D • 1^53=131 0D1202Ô S ■ 11 CONVERSION LIST . CONVERSION LIST conventional type number to S M D type number conventional type microminiature type Conventional type BA243 BA314 BA480 BA481 BA482 BA483 BAT85 BAT 18 BAS 17 BAT 17