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    BUZ905P Search Results

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    BUZ905P Price and Stock

    TT Electronics Power and Hybrid / Semelab Limited BUZ905P

    P Channel Mosfet, -160V, -8A, To-247; Channel Type:P Channel; Drain Source Voltage Vds:160V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; Msl:- Rohs Compliant: Yes |Tt Electronics/semelab BUZ905P
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    BUZ905P Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUZ905P Magnatec P-CHANNEL POWER MOSFET Original PDF
    BUZ905P Magnatec P-channel Power Mosfet Original PDF
    BUZ905P Unknown Shortform Datasheet & Cross References Data Short Form PDF

    BUZ905P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUZ900P

    Abstract: BUZ901P BUZ906 BUZ905P BUZ901 BUZ905 BUZ906P
    Text: BUZ905P BUZ906P MAGNA TEC MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 P–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50


    Original     		PDF BUZ905P BUZ906P PR000 BUZ900P BUZ901P BUZ906 BUZ905P BUZ901 BUZ905 BUZ906P

    Untitled

    Abstract: No abstract text available
    Text: BUZ905P BUZ906P MAGNA TEC MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 P–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50


    Original     		PDF BUZ905P BUZ906P

    Untitled

    Abstract: No abstract text available
    Text: BUZ905P Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)160 V(BR)GSS (V) I(D) Max. (A)8.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)8.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55


    Original     		PDF BUZ905P

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    Untitled

    Abstract: No abstract text available
    Text: BUZ900P BUZ901P MAGNA TEC MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 N–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50


    Original     		PDF BUZ900P BUZ901P

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


    Original     		PDF DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E

    BUZ901P

    Abstract: BUZ900P BUZ900 BUZ906P BUZ901 BUZ905P 125W3
    Text: BUZ900P BUZ901P MAGNA TEC MECHANICAL DATA Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) 15.49 (0.610) 16.26 (0.640) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 N–CHANNEL POWER MOSFET 20.80 (0.819) 21.46 (0.845) POWER MOSFETS FOR AUDIO APPLICATIONS 4.50


    Original     		PDF BUZ900P BUZ901P BUZ901P BUZ900P BUZ900 BUZ906P BUZ901 BUZ905P 125W3

    BUZ900

    Abstract: BUZ900P TO-3P BUZ900D BUZ902DP to-3 BUZ908DP BUZ901P BUZ905 SOT-227
    Text: Magnatec. Мощные комплиментарные полевые транзисторы для аудио техники Компания Magnatec является подразделением Semelab Официальный дистрибьютор SEMELAB в России - компания АПЕКС.


    Original     		PDF BUZ900 BUZ901 BUZ900D BUZ901D BUZ900P BUZ901P BUZ900DP BUZ901DP BUZ900X4S BUZ901X4S BUZ900 BUZ900P TO-3P BUZ900D BUZ902DP to-3 BUZ908DP BUZ901P BUZ905 SOT-227

    BUZ901P

    Abstract: buz900p BUZ906P
    Text: BUZ905P BUZ906P M ECHANICAL DATA Dim ensions in mm inches 4.69 (0.185) 5.31 (0.209) 1.49 2.49 P-CHANNEL POWER MOSFET 15.49(0.610) * *16.26 a o c i(0.640) ne/ni * (0.059) (0.098) POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • P-CHANNEL POWER MOSFET


    OCR Scan     		PDF BUZ905P BUZ906P BUZ900P BUZ901P -160V BUZ901P buz900p BUZ906P

    HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET

    Abstract: 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D
    Text: M A G IMA r^ T E C BUZ 900D BUZ 9 0 1 D NEW PRODUCT SILICON N-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIG H POWER AMPLIFIER APPLICATION FEATURES HIGH SPEED SW ITCHING N - CHANNEL POWER MOSFET SEMEFAB DESIG NED AND DIFFUSED


    OCR Scan     		PDF BUZ905D BUZ906D -100mA -160V -200V HITACHI 2SJ56 TO-3 AMP 200V 125W MOSFET 2SJ56 2sk176 mosfet cross reference 2sk135 audio application lateral mosfet audio amplifier BUZ901P 2sJ50 mosfet hitachi mosfet power amplifier audio application BUZ900P BUZ900D

    Untitled

    Abstract: No abstract text available
    Text: bOE » • 0133107 00ÜD53b SEMELAB PLC TOT ■ S f l L B prpr M A G N A TEC BUZ 9 00 P NEW PRODUCT b u z s g ip SILICON IM-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY, HIGH POWER AMPLIFIER APPLICATION FEATURES • • •


    OCR Scan     		PDF BUZ905P BUZ906P O-247

    Untitled

    Abstract: No abstract text available
    Text: bQE D • 01331Ô7 GGGDSMS - T12 ■ - SEMELAB PLC SIILB ^ r -3 ° i-^ 3 prpr M AGNA r^ tec BUZ 905P BUZ 90BP NEW PRODUCT SILICON P-CHANNEL POWER MOSFET DESIGNED FOR USE AS COMPLEMENTARY PAIR FOR HIGH QUALITY,


    OCR Scan     		PDF BUZ900P BUZ901P

    BUZ900P

    Abstract: L01A BUZ901P 8uz90 BUZ901 BUZ905P BUZ906P
    Text: <\ BUZ900P BUZ901P IIVI/VGIMA 't e c MECHANICAL DATA N-CHANNEL POWER MOSFET Dimensions in mm inches 1 5 .4 9 (0 6 1 0 ) 16 2 6 (0 6 4 0 ) POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES • HIGH SPEED SWITCHING • N-CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED


    OCR Scan     		PDF BUZ900P BUZ901P BUZ905P BUZ906P L01A BUZ901P 8uz90 BUZ901 BUZ905P BUZ906P

    BUZ900D

    Abstract: BUZ50ASM BUZ50B-220SM
    Text: SEMELAB pic Type_No BUZ45A BUZ46 BUZ50A BUZ50A-220M BUZ50A-220SM BUZ50A-220TM BUZ50A-T0220M BUZ50ASM BUZ50B BUZ50B-220M BUZ50B-220SM BUZ50B-T0220M BUZ50BSM BUZ60 BUZ60B BUZ63 BUZ64 BUZ71 BUZ71A BUZ72A BUZ74 BUZ74A BUZ76 BUZ84 BUZ900 BUZ900D BUZ900DP BUZ900P


    OCR Scan     		PDF BUZ45A BUZ46 BUZ50A BUZ50A-220M BUZ50A-220SM BUZ50A-220TM BUZ50A-T0220M BUZ50ASM BUZ50B BUZ50B-220M BUZ900D BUZ50B-220SM