BV 3055 Search Results

Schalter

Abstract: 3055 TO-3P 2N 3055 2N3055
Contextual Info: Typ f Vcc Pin po ut ßVCBO BV c e O Gehäuse t'rpe _ 2N 5941 2N 5942 2M 5943 f~ rrin IV Hz 30 30 250 28 28 15 50 m A 40PEP 80PEP 7 dB 65 65 40 package 35 35 30 D IA-4L D IA-4L

BU 3150

Abstract: CYR53 CYR20 104 K capacitor BU 3150 cross reference M39014 series marking code BV 3145 CY20C cy06c100 CY10
Contextual Info: 1 Military Glass Capacitors Glass/Glass-K Capacitors GLASS CAPACITOR MIL-PRF-23269 ESTABLISHED RELIABILITY M AND S FAILURE RATE LEVEL 100V, 300V, 500V Style CYR10, CYR15, CYR20, CYR30 CYR51, CYR52, CYR53 Slash Sheets /01, 3001-3126, 7001-7126 /02, 3001-3057, 7001-7057

3222-16

Abstract: 304-245
Contextual Info: Mini-Circuits - Specification for Voltage Controlled Oscillator - ROS-ED9280B/2 Voltage Controlled Oscillator Notes: • For Surface Mount Environmental Specifications, please click here. Re-flow soldering information is available in "Surface Mount" article.

max 8796

Abstract: F 7848
Contextual Info: Mini-Circuits - Specification for Voltage Controlled Oscillator - ROS-ED10028/1 Voltage Controlled Oscillator Notes: • For Surface Mount Environmental Specifications, please click here. Re-flow soldering information is available in "Surface Mount" article.

304-598

Abstract: 23-5042
Contextual Info: Mini-Circuits - Specification for Voltage Controlled Oscillator - JTOS-ED9565/1 Voltage Controlled Oscillator Notes: • For Surface Mount Environmental Specifications, please click here. Re-flow soldering information is available in "Surface Mount" article.

30458

Abstract: 30638 30272 286826
Contextual Info: Mini-Circuits - Specification for Voltage Controlled Oscillator - ROS-ED9785/1 Voltage Controlled Oscillator Notes: • For Surface Mount Environmental Specifications, please click here. Re-flow soldering information is available in "Surface Mount" article.

BU 3150

Abstract: tc 3085 space shuttle K250 cap K250 capacitor military relay ETR15 downhole ET322 M39014 5
Contextual Info: Glass Dielectric Caps Index Introduction Capacitor Military Cross Reference and Alphabetical Parts Listing .2 Glass/Glass-K Selector Guide .3

3055L2

Abstract: 3055L b3055
Contextual Info: S T P /B 3055L2 S amHop Microelectronics C orp. Nov 23, 2004 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mW) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable.

Contextual Info: Mini-Circuits - Specification for Frequency Mixer - SYM-EDR5161/1 Frequency Mixers Notes: • For Surface Mount Environmental Specifications, please click here. print this page Procedures and Environmental Specifications are given in Mini- Circuits Guarantees Quality.

30272

Abstract: 3064-70
Contextual Info: Mini-Circuits - Specification for Voltage Controlled Oscillator - ROS-EDR5827 Voltage Controlled Oscillator Notes: • For Surface Mount Environmental Specifications, please click here. Re-flow soldering information is available in "Surface Mount" article.

Contextual Info: Mini-Circuits - Specification for Frequency Mixer - MBA-EE7756/16 Frequency Mixers Notes: • Non-catalog model. Please consult factory for price and delivery. • For Surface Mount Environmental MBA-EE7756/16 Specifications, please click here. print this page

f3055l

Abstract: 3055LE fd3055l f3055 3055L FP3055LE fd3055le
Contextual Info: m HARRIS U S E M I C O N D U C T O R U RFD3055LE, RFD3055LESM, 12A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packages JEDEC TO-220AB 1 2A , 60V DS ON : 0 .1 50S2 • 2 kV ESD P ro te c te d

bd 3055

Abstract: BD 139 140 BD NPN transistors BDX 241 BD139-6 2N3055 BD139 3055 npn BD 139 N to128
Contextual Info: Typ type f MHz vcc 2N 2N 2N 2N 150 400 400 50 13 28 26 12,5 5713 5773 5774 5848 Pout bvcbo bvceo Gehause package 3,4 0,12 1 3,25 11 1,5 8 20 60 65 65 48 40 35 35 24 TO-128 TO-117 TO-129 145 v CEO mm V 'CD max A mm hpE max 45 60 80 1 1 1 40 40 40 250 160 160

PAQ100

Abstract: paq-series CSA22 PAQ100S48-1R2 PAQ100S48-1R8 PAQ100S48-2R5 PAQ100S48-3R3 PAQ100S48-5 BV 3055
Contextual Info: PAQ100 Series Quarter Brick Power Supply Specifications Low Voltage Outputs 1.2-5.0V High Power Density up to 90.4W/in3 Industry Standard Footprint & Pinouts Safety Agency Approvals (UL1950, CSA22.2, CE, TUV) Constant Current Limit (Auto Restarting) Remote On / Off (Positive/Negative Logic Available)

U3055L

Abstract: logic level mosfet SSR3055L cc1k SSU3055L 824 mosfet diode 824
Contextual Info: N-CHANNEL LOGIC LEVEL MOSFET SSR3055L/U3055L FEATURES • • • • • • • D-PAK Lower R ds ON Excellent voltage stability Fast switching sp eed s Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Lambda VEGA 650

Abstract: klaasing Lambda VEGA 900 EN60068-2 Powerware Plus 40 EN50081-1 EN50082-2 Lambda VEGA EN61000-4-2 EN61000-4-3
Contextual Info: Vega 450, 650 & 900 Watts ¾ Industry leading Power Density ¾ 1 to 10 outputs ¾ Voltages from 0.25 – 62V ¾ Current up to 114 Amps ¾ Screw, Fast-on or IEC connection ¾ Worldwide approvals & CB report ¾ Low leakage current for Medical The world’s most configurable power supply

w2f transistor

Abstract: klaasing ibanez w2f 48 Amtek Lambda VEGA VEGA 650 Lambda VEGA 900 coutant KD 3055
Contextual Info: Vega 450 & 650 Watts ! Industry leading Power Density ! 1 to 10 outputs ! Voltages from 1.8 – 62V ! Current up to 120 Amps ! Screw, Fast-on or IEC connection ! Worldwide approvals & CB report ! Low leakage current for Medical The world’s most configurable power supply

CNY17F-2

Abstract: CNY17F-3 CNY17F-4 E91231 IS203X-94
Contextual Info: IS203X-94 NON-BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 l Certified to EN60950 by the following

3055L transistor

Abstract: Mosfet Sot223
Contextual Info: [ /Title RFT30 55LE /Subject (2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET) /Author () /Keywords (Harris Sem,ico nductor, N-Channel, Logic Level, ESD Rated, Power MOSFET, SOT223) /Creator () /DOCIN RFT3055LE Semiconductor 2.0A, 60V, 0.150 Ohm, N-Channel,

LAMBDA over Voltage

Abstract: LAMBDA Micro Lambda Wireless inverter tdk Lambda Electronics CSA22 PAQ100S48-1R2 PAQ100S48-1R8 PAQ100S48-2R5 PAQ50S48-1R2
Contextual Info: • Low Voltage Outputs 1.2-5.0V 3 • High Power Density up to 90.4W/in • Industry Standard Footprint & Pinouts • Safety Agency Approvals (UL1950, CSA22.2, CE, TUV) • Constant Current Limit (Auto Restarting) • Remote On / Off (Positive/Negative Logic Available)

3055L

Abstract: TD 8145 AN7254 AN7260 AN9321 AN9322 RFT3055LE TB334
Contextual Info: RFT3055LE Data Sheet August 1999 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET • 2.0A, 60V • rDS ON = 0.150Ω • 2kV ESD Protected • Temperature Compensating PSPICE Model • Thermal Impedance SPICE Model • Peak Current vs Pulse Width Curve

AF114

Abstract: 2N2448 2N27S
Contextual Info: SYMBOLS & CODES EXPLAINED IN T Y P E No. CROSS-INDEX & TE C H N IC A L SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. This manufacturer-identifying symbol (assigned by D .A .T.A .) is an integral part of the type number (in Type No. Cross Index,

2N35 Ge NPN

Abstract: 2SD128 2N2426 2SC18H 2SC34 2SD31 2SD32 GT1608 GT1609 SYL1454
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

3055l

Abstract: 3055LD AN7254 AN7260 AN9321 AN9322 RFT3055LE TB334 TA49158
Contextual Info: RFT3055LE Data Sheet Title FT3 5LE bt 0A, V, 50 m, 2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET Features This product is an N-Channel power MOSFET manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives