BV 410 Search Results

2N3729

Abstract: 2N3551 2N6925A 2N6583 2N6923 2n6924
Contextual Info: AVAILABLE GEOMETRIES — SORTED BY Ic MAX lcMAX BV ceo Ran§e BV ebo Ran8e Low Current HfE From V To (V) From (V) To (V) @ lc mA Mid-Range HfE High Current HtE Typ VCE(sat) Typ Typ Cib @ 0.5V Cob @ 10V ^S/b A Geom. Pol. Use Code 0.03 0014 PNP 2 10 25 4 6

DRF601T2D

Abstract: RF601T2D
Contextual Info: SPICE PARAMETER RF601T2D by ROHM FAE Div. * DRF601T2D D model * Date: 2008/07/28 .MODEL DRF601T2D D + IS=150.44E-12 + N=1.1115 + RS=12.380E-3 + IKF=22.551E-3 + EG=1.0700 + CJO=99.780E-12 + M=.41038 + VJ=.43155 + ISR=411.26E-12 + NR=3 + BV=200 + TT=31.865E-9

2008.07.28

Abstract: DRF601B2D 4315 spice model RF601B2D
Contextual Info: SPICE PARAMETER RF601B2D by ROHM FAE Div. * DRF601B2D D model * Date: 2008/07/28 .MODEL DRF601B2D D + IS=150.44E-12 + N=1.1115 + RS=12.380E-3 + IKF=22.551E-3 + EG=1.0700 + CJO=99.780E-12 + M=.41038 + VJ=.43155 + ISR=411.26E-12 + NR=3 + BV=200 + TT=31.865E-9

D1SR154-400

Abstract: diode 1SR154-400 Model 534 1SR154-400 spice 1SR154-400 ROHM ROHM 1SR
Contextual Info: SPICE PARAMETER 1SR154-400 by ROHM FAE Div. * D1SR154-400 D model * Date: 2008/08/22 .MODEL D1SR154-400 D + IS=534.77E-12 + N=1.6239 + RS=50.532E-3 + IKF=4.0010 + CJO=23.729E-12 + M=.31942 + VJ=.41083 + ISR=2.4181E-9 + NR=2.5000 + BV=500 + TT=1.4427E-6

irfs250a

Contextual Info: IRFS250A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BV,OSS = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 u A Max. @ VDS= 200V

F22V10B

Abstract: f22v1 ATF22V10 ATF22V10B ATF22V10BQ ATF22V10BQL
Contextual Info: Features • iflmÉL Industry Standard Architecture Low Cost Easy-to-Use Software Tools High Speed Electrically Erasable Programmable Logic Devices 7.5 ns Maximum Pin-to-Pin Delay Several Power Saving Options • • Device Icc. Stand-Bv ATF22V10B ATF22V10BQ

Contextual Info: Features • iflmËL Industry Standard Architecture Low Cost Easy-to-Use Software Tools High Speed Electrically Erasable Programmable Logic Devices 7.5 ns Maximum Pin-to-Pin Delay Several Power Saving Options • • Device Icc. Stand-Bv ATF22V10B ATF22V10BQ

Contextual Info: SAW FILTER TECHNICAL DATA KF402BS/BVKF518BS/BV SPECIFICATIONS FOR SAW FILTER Band pass filters for 400MHz^520MHz Range. High stability and reliability with good performance and no adjustment. Wide and sharp pass band characteristics. Low insertion loss and deep stop band attenuation

BV 410

Abstract: bv430 KF470 KF510 Marking h 498 BV466
Contextual Info: SAW FILTER TECHNICAL DATA KF402BS/BVKF518BS/BV SPECIFICATIONS FOR SAW FILTER Band pass filters for 400MHz^520MHz Range. High stability and reliability with good performance and no adjustment. Wide and sharp pass band characteristics. Low insertion loss and deep stop band attenuation

Contextual Info: FIELD EFFECT TRANSISTORS FET NTE Type No. Polarity and Material Description and Application Case Style Dlag. No. Voltage Gate to Source Min (Volta) Cutoff Voltage Gate to Source Max(OFF) (Volta) BV q s s Drain Current Zero-Gate Min-Max (mA) Drain Current

irf460 to-247

Abstract: IRF450R IRF331R IRF460 IRF840R IRF341R irf362 IRFP450R THOMSON DISTRIBUTOR 58e d irfp462
Contextual Info: THOnSON/ DISTRIBUTOR Power MOSFETs SflE D • T02bñ73 0G0S711 bST ■ T C S K - _ _ Rugged-Series Power MOSFETs — N-Channel continued Package ft JP Maximum Ratinas BV d s S (V) ■d s (A) 'DS(O N) OHMS eAS (mj) 350

tic 32a

Contextual Info: IRFS650A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BV d ss = 2 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A Max. @ VDS= 200V

l13a

Abstract: SSS2n60
Contextual Info: SSS2N60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BV^ss = 600V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 nA Max. @ Lower R^on) : 3.892 Q. (Typ)

Tny 178 PN

Abstract: TNY284-290 smd zener diode 12b 40 tny 286 pn TNY288
Contextual Info: TNY284-290 TinySwitch-4 Family Energy-Efficient, Off-Line Switcher With Line Compensated Overload Power Product Highlights Lowest System Cost with Enhanced Flexibility • 725 V rated MOSFET • Increases BV de-rating margin • Line compensated overload power – no additional components

Contextual Info: Advanced Power Electronics Corp. AP2533GY-HF-3 Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low Gate Charge N-CH D2 BV DSS S1 Fast Switching Performance D1 RoHS-compliant, halogen-free G2 P-CH S2 SOT-26 Y G1 Description

Contextual Info: Advanced Power Electronics Corp. AP2622GY-HF-3 Dual N-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs BV DSS Low Gate Charge D2 D1 Small surface-mount package 50V R DS ON 1.8Ω ID RoHS-compliant, halogen-free 520mA G2 G1 S1 Description

ssm20p02j

Contextual Info: SSM20P02H,J P-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple drive requirement D 2.5V gate drive capability Fast switching BV DSS -20V R DS ON 52mΩ ID G -18A S Description Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching,

gelijkrichter

Contextual Info: Standaarden en reglementen Technische informatie Veiligheid Veiligheid Veiligheidsnormen Er zijn verschillende veiligheidsnormen. In het algemeen volgen ze het principe van dubbele veiligheid. De vereiste maatregelen zijn afhankelijk van de toepassing bv. draagbare, mobiele of vaste installaties alsook van de gebruikersgroepen of het gebruik volgens de ontwerpbedoeling.

Contextual Info: Advanced Power Electronics Corp. AP20P02GH/J-3 P-channel Enhancement-mode Power MOSFET 2.5V Gate Drive Capability D Simple Drive Requirement BV DSS Fast Switching Characteristic RDS ON G RoHS-compliant -20V 52mΩ ID -18A S Description Advanced Power MOSFETs from APEC provide the designer with the best

LTAGP

Abstract: IRFU410A 1J15
Contextual Info: IRFU410A Advanced Power MOSFET IR F U 410A • Im proved Inductive R uggedness ■ R ugged P olysilicon G ate Cell S tructure BV = 520 V ^D S o n = 1 0 .0 n dss lD = ■ Fast S w itching T im es ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge

BTA18

Abstract: MMBT pnp BT5771 SOT23 M
Contextual Info: Fairchild Semiconductor Qjscrete pQwer an j SjQna| JeChnOlOQieS Selection Guides Surface Mount Bipolar Transistors (continued Low Noise Amplifiers Part Number NF (dB) M ax BV Min Mm T *» *6 nA Package V20S ÛI SOT-23 m 10 SOT-23 1 SOT-23 NMi M M B T 5089

Contextual Info: MOTOROLA BINARY COUNTER The MC10178 is a four-bit counter capable of divide-by-two, divide-bv-four, divide-by-eight or a divide-by-sixteen function. Clock inputs trigger on the positive going edge of the clock pulse. Set and Reset inputs override the clock, allowing asyn­

Contextual Info: Features Single Voltage for Read and Write: 2.7V to 3.6V BV , 3.0V to 3.6V (LV) Fast Read Access Time -120 ns Internal Program Control and Timer 16K bytes Boot Block With Lockout Fast Chip Erase Cycle Time -1 0 seconds Byte-by-Byte Programming - 30 |is/Byte Typical

Contextual Info: IRFWZ34 A d van ced Power MOSFET FEATURES BV DSS = 60 V ♦ Avalanche Rugged Technology 0.04Î2 ♦ Rugged Gate Oxide Technology ^D S o n - ♦ Lower Input Capacitance In = 30 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PA K ♦ 175°C Operating Temperature