BV UI 21 Search Results

sot23 marking code 8pf

Abstract: marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SST1130 SMT MMST1130 BVcbo BVceo BV ebo @VC8 ui Min. Min. Min. Max. Min. Max. 30V 25V 5V 50nA 20V 120 360 60 ^ ^ce 2mA 1V

vde 0551

Abstract: hahn transformer VDE 0551 hahn transformer EN 60742 BV UI 21 0013 BV UI 21 HAHN bv 20 hahn-transformers hahn BV UI 30 hahn BV
Contextual Info: The HAHN UI 21 Series Quality and efficiency in series COMPACT DESIGN AND CONVINCING LONGTERM DURABILITY HAHN - flat transformers UI 21, UI 30, UI 39, UI 48 performance 1.0 VA highest security durability absolutely short-circuit-proof at temperature high dielectric strength

hahn BV UI 30

Abstract: en 61558 hahn BV HAHN HAHN ui 39 BV UI 21 HAHN ta UI30 HAHN bv 20
Contextual Info: UI 21 Трансформаторы плоского типа Выходная мощность: 1,0 BA • Мощность – до 1,0 ВА • Температурный класс 70°C/B • Абсолютная защита от токов короткого замыкания

BV UI 21

Abstract: bv 304 UI30 bv ui 304 BV UI
Contextual Info: UI 30 Трансформаторы плоского типа Выходная мощность: 3,0 BA • Мощность – до 16,0 ВА • Трансформаторы температурного класса 70°C/B не имеют встроенного

BV UI 396 0079

Abstract: UI39 ENEC-05 BV UI 396 0084
Contextual Info: UI 39 Трансформаторы плоского типа Выходная мощность: 10,0 BA • Мощность – до 30,0 ВА • Трансформаторы температурного класса 70°C/B не имеют встроенного

BV UI 21

Contextual Info: UI 48 Трансформаторы плоского типа Выходная мощность: 40,0 BA • Мощность – до 60,0 ВА • Трансформаторы температурного класса 70°C/B не имеют встроенного

transistor GR 345

Abstract: TIC COL 02 25CC SD1495 SD1495-3 A 798 transistor
Contextual Info: H m ; t^tPa n 'r-tSj-» «rar». S f It P ro g re s s P o w e re d b y T ec h no log y 140 Commerce Drive Montgomeryville, PA 18936-1013 Tel: 215 631-9840 SD1495-3 RF & MICROWAVE TRANSISTORS 900-960MHZ CLASS C, BASE STATIONS CLASS C TRANSISTOR FREQUENCY

5n120bnd

Abstract: transistor de 1200v 5a TP5N12 HGTG5N120BND HGTP5N120BND
Contextual Info: HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Semiconductor J a n u a r y 1999 D ata S h e e t 21 A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG5N120BN, HGTP5N120BND, and HGT1S5N120BNDS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

Contextual Info: Infineon ILD205T/206T/207T/211T/213T/217T FEATURES • Two Channel Coupler • SOIC-8A Surface Mountable Package • Standard Lead Spacing of .05" • Available only on Tape and Reel Option Conforms to ElA Standard 481-2 • Isolation Test Voltage, 3000 VRMS

EE-25 transformer

Abstract: Transformer EE-25 Transformer EE-25 100 EE-25 200 6 transformer APT30D100B APT30D80B APT30D90B CR diode transient
Contextual Info: ADVANCE] POWER TECHNOLOGY b3E » • O ZS ?1^ 0GQlQ3Li 213 H A V P A d va n c ed P o w er Tec h n o lo g y 1 - Cathode 2 - Anode Back of Case-Cathode APT30D100B APT30D90B APT30D80B 1000V 900V 800V 30A 30A 30A ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS

SKP24A

Abstract: sis 968 P110a 5KP78A 5KP10A 5KP110A 5KP11A 5KP12A 5KP14A 5KP15A
Contextual Info: NEW ENGLAND SEMICONDUCTOR 5KP5.0A thru 5KP110A 5000 WATT SILICON VOLTAGE TRANSIENT SUPPRESSOR O AVAILABLE IN VOLTAGES FROM 6.7V THRU 128V 0.3 1 0 + /-0 .0 1 0 The NES 5KP5.0 to 5K.P110A series o f transient suppressor diodes are designed to protect electronic equipment from failure due to over voltage transients. The devices

4pk sot23

Abstract: bm 8900 SOT-23-6 D/A maa 503 OEM 615 TQ5M31 mbae o3cc
Contextual Info: WIRELESS COMMUNICATIONS DIVISION o#Üû„T6 Vdd û2LS62 Gain/IP3/current ¯ adjustment 50 ohm LO Ä INPUT Vdd IF GIC GND LO RF WT8P64 Ü"\°í Ú#LF IF OUT „2 GND „zst 50 ohm RF INPUT # Ä ¶¬ ân TQ5M31 Q… M= \ PCS Á& Q¡, ISM IYe M:, GPS e-}, L

cl6d

Contextual Info: M GE D FASCO 3 4 clci73ô 0QQ105S INDS/ b E 3 SENI SENISYS CLED1 CLED1A CLED1B CLED1C ± .0 0 5 -.210 DIA± .0 0 7 -.183 DIAWINDOW ±.011 .147 OIA Gallium Arsenide Infrared Emitting Diode ±.010 .200 GENERAL DESCRIPTION — The Clairex CLED1 is a Gallium Arsenide infrared emitting diode in a lensed

Contextual Info: /=T SGS-THOMSON A T /. Q a n K g ^ n L g g irM O ig i_ A M 2 7 2 9 - 1 1 0 RF & M I C R O W A V E T R A N S I S T O R S S -B A N D R A D A R A P P L I C A T I O N S • R EFR AC TO R Y/G O LD M ETALLIZATION ■ EM ITTER SITE BALLASTED ■ 3:1 VSWR CAPABILITY

MGA231

Abstract: c1718 transistor c1718 C1894 C2090 MCA230 MCA231 MCA255
Contextual Info: GENL INSTRv OPTOELEK 88 DE | aSTOlää DDDSTDl a GENERAL INSTRUMENT PHOTODARLINGTON OPTOCOUPLERS MCA230 MCA231 MCA255 D ES C R IPTIO N P A C K A G E D IM EN SIO N S The M CA230, MCA231 and M C A 255 are photodarlington optically coupled isolators. An infrared emitting diode coupled with a silico n

BAVP

Contextual Info: ADVANCED POùlER TECHNOLOGY b lE D □ E S T 'IG 'i DDDDflDS TOT • AVP ADVANCED POW ER Te c h n o l o g y • .«<■> ill POWER MOS IV™ APT802R4GN APT752R4GN APT802R8GN APT752R8GN 800V 750V 800V 750V 4.3A 4.3A 4.0A 4.0A 2.40Q 2.40i2 2.80Q 2.80Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

6045h

Contextual Info: ADVANCED POWER TECHNOLOGY blE D • DZS?^ 000GÖ21 IS? « A V P ADVANCED POW ER T e c h n o lo g y 9 POWER MOS IV _ APT6040HN 600V 16.5A 0.40Q APT5540HN 550V 16.5A 0.40Q APT6045HN 600V 15.5A 0.45D APT5545HN550V15.5A 0.45H N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

IEC-947-5-1 AC15 B300

Abstract: IEC 947-1 B300 DC-13 R300 kv86
Contextual Info: Control and signalling units Ø 16 General : pages 2 to 5 References : pages 8 to 21 Dimensions : pages 22 to 25 Harmony style 6 Pushbuttons, switches and pilot lights, with double insulated bezel Characteristics Environment Conforming to standards IEC 947-1, IEC 947-5-1, IEC 947-5-4,

transistor 1FX

Abstract: sc-59 a9 015GI
Contextual Info: UMH8N/IMH8A h ÿ > y Z. & / T ransistors UMH8N ._ u o _ Ilw IH Ö A Isolated Mini-Mold Device O / ' Ç — £ K 7 'f / V in verier Driver Dimensions Unit : mm 1) UMT (SC-70), SMT (SC-59) t l i ­ IMH8A UMH8N 11•1-UZ I 0.1 t t « C z m < n 9 ÿ ^ )i h 7 > V ^ i'

LM119

Contextual Info: L M 1 1 9 - L M 219 L M 319 S G S -T H O M S O N im HIGH SPEED DUAL COMPARATORS . . . . . TWO INDEPENDENT COMPARATORS OPERATES FROM A SINGLE+5V SUPPLY TYPICALLY80ns RESPONSE TIME AT ±15V MINIMUM FAN-OUT OF 2 EACH SIDE MAXIMUM INPUT CURRENT OF 1nA OVER OPERATING TEMPERATURE RANGE

LA9LB920

Abstract: SCHNEIDER MOTOR PROTECTION circuit breaker IEC 439-1 LA9-LB920 GV3-ME40 GK3EF40 GV3-A03 GV3A01 schneider GV2ME GV3-A01
Contextual Info: Characteristics TeSys protection components Thermal-magnetic motor circuit-breakers Environment Circuit-breaker type GV2-ME Conforming to standards EN 60947-1, 947-2, 947-4-1, EN 60204, UL 508, CSA C22-2 n° 14, NF C 63-650, 63-120, 79-130, VDE 0113, 0660

irf*234 n

Abstract: IRF235 sm 4205 IRF234d GE-X8
Contextual Info: IRF234, IRF235 IRF236, IRF237 21 HARRIS N-Channel Power MOSFETs Avalanche-Energy Rated May 1992 Package Features T O -2 0 4 A A • 8.1A and 6.5A, 275V - 250V B O T T O M VIEW • rD S °n = 0 -4 5 0 and 0 .6 8 ÎÎ • Single Pulse Avalanche Energy Rated

Contextual Info: KSP24 NPN EPITAXIAL SILICON TRANSISTOR VHF TRANSISTOR ABSOLUTE MAXIMUM RATINGS Tfl = 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation (Ta= 25°C) Derate above 25 °C Junction Temperature

2N5001

Abstract: FA 5501 SFT3997 SFT5001 VN68
Contextual Info: SFT5001 SSDI 5 AMP HIGH SPEED PNP TRANSISTOR 1 4 8 4 9 F I R E S T O N E BLVD. L A M I R A D A , CA. 9 0 6 3 8 213 9 2 1 - 9 6 6 0 F A X (213) 9 2 1 - 2 3 9 6 150 VOLTS C A S E S T V' 1 EE xT E l D E E d T O — 5 3 ALL TERMINALS ISOLATED X FEATURES FROM