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    IRF235 Search Results

    IRF235 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF235 Intersil 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 ?, N-Channel Power MOSFETs Original PDF
    IRF235 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRF235 International Rectifier TO-3 N-Channel Hexfet Power MOSFETS Scan PDF
    IRF235 International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRF235 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRF235 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRF235 Unknown FET Data Book Scan PDF

    IRF235 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    irf234 n

    Abstract: TA17413
    Text: IRF234, IRF235, IRF236, IRF237 S E M I C O N D U C T O R 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original
    PDF IRF234, IRF235, IRF236, IRF237 TA17413. irf234 n TA17413

    irf234 n

    Abstract: irf*234 n IRF236 IRF234 IRF237 IRF235 TB334
    Text: IRF234, IRF235, IRF236, IRF237 Semiconductor 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original
    PDF IRF234, IRF235, IRF236, IRF237 irf234 n irf*234 n IRF236 IRF234 IRF237 IRF235 TB334

    Untitled

    Abstract: No abstract text available
    Text: IRF235 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)6.5 I(DM) Max. (A) Pulsed I(D)4.1 @Temp (øC)100 IDM Max (@25øC Amb)26 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ


    Original
    PDF IRF235

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original
    PDF RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751

    irf*234 n

    Abstract: IRF235 sm 4205 IRF234d GE-X8
    Text: IRF234, IRF235 IRF236, IRF237 21 HARRIS N-Channel Power MOSFETs Avalanche-Energy Rated May 1992 Package Features T O -2 0 4 A A • 8.1A and 6.5A, 275V - 250V B O T T O M VIEW • rD S °n = 0 -4 5 0 and 0 .6 8 ÎÎ • Single Pulse Avalanche Energy Rated


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    PDF IRF234, IRF235 IRF236, IRF237 IRF235, IRF237 irf*234 n sm 4205 IRF234d GE-X8

    Untitled

    Abstract: No abstract text available
    Text: IRF234, IRF235, IRF236, IRF237 h a r r is SEUIC0NDUCT0R 8.1 A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1 A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


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    PDF IRF234, IRF235, IRF236, IRF237 1RF234, RF236, RF237

    irf*234 n

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR 40E » • 430 2 2 7 1 GOBM'RQH b « H A S 33 HARRIS IR F234, IRF235 IR F236, IR F237 August 1991 N-Channel Power MOSFETs Avalanche-Energy Rated l\ Features Package T 0 -2 0 4 A A • 8.1A and 6 .SA, 2 7 5 V - 2 5 0V • rD S o n =


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    PDF IRF235 IRF234, IRF235, IRF236, IRF237 RF234, irf*234 n

    irf*234 n

    Abstract: TA17413
    Text: IRF234, IRF235, IRF236, IRF237 h a r r is 8.1 A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 8.1 A and 6.5A, 275V and 250V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


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    PDF IRF234, IRF235, IRF236, IRF237 TA17413. andRF234, RF236, RF237 irf*234 n TA17413

    irf234 n

    Abstract: irf*234 n IRF234 irf238 ir1f IRF237 IRF235 IRF236
    Text: Rugged Power M O SFETs_ IRF234, IRF235, IRF236, IRF237 File Number 2208 Avalanche-Energy-Rated N-Channel Power MOSFETs 8.1 A and 6.5 A, 275 V and 250 V fDs on = 0.45 O and 0.68 n N-CHANNEL ENHANCEMENT MODE Feature*: • Single pulse avalanche energy rated


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    PDF IRF234, IRF235, IRF236, IRF237 IRF236 IRF237 irf234 n irf*234 n IRF234 irf238 ir1f IRF235

    irf244

    Abstract: IRF351 IRF242 IRF243 IRF245 IRF252 1RF450 1RF430 1RF340 T0204AA
    Text: - gj £ *± € ft A £ t§ <Ta=25^C Vd s or Vd g Vg s Pd Id * /CH a Ig s s rain * /CH Vg s * V) (V) (W) (A) V g s th) Id s s (nA) (V) (HA) (V) (V) (V) ft Id (nA) & & F os(on) Vd s = Vg s max Vd s m Id (on) Ciss g fs Coss ft Crss V g s =0 (max) *typ V g s


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    PDF T0-204AA O-204AA RF240 TQ-204AE IRF242 T0-204AE IRF243 1RF442 irf244 IRF351 IRF242 IRF243 IRF245 IRF252 1RF450 1RF430 1RF340 T0204AA

    irf113

    Abstract: 1RF440 1RF450 irf244 IRF242 IRF243 IRF245 IRF252 1RF340 Siliconix
    Text: - ft A gj £ *± V ds or € £ Vgs t§ <Ta=25^C Pd Id m a Ig s s V gs th ) Id s s ft & F o s o n ) Vd s = & I d (on) Coss C is s g fs * /CH rain * /CH Vg s =0 ( * ty p ) ( * ty p ) (* ty p ) Id (max) (max) (max) Vd s (A) (pF) (pF) (pF) (V) (max) max Id


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    PDF T0-204AA O-204AA RF240 TQ-204AE IRF242 T0-204AE IRF243 O-204AE IRF250 irf113 1RF440 1RF450 irf244 IRF242 IRF243 IRF245 IRF252 1RF340 Siliconix

    4311 mosfet transistor

    Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
    Text: - POWER MOSFETs 4 N-CHANNEL POWER MOSFETs PAGE 2N6755, 2N6756 N-Channel Enhancement-Mode Power Field-Effect Transistors. 2N6757, 2N6758 N-Channel Enhancement-Mode Power Field-Effect Transistors. 4-11 2N6759, 2N6760


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    PDF 2N6755, 2N6756 2N6757, 2N6758 2N6759, 2N6760 2N6761, 2N6762 2N6763, 2N6764 4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r

    k3226

    Abstract: LD 7751 os lg washing machine control circuit lg washing machine irf234 n washing machine lg IRF234 F234
    Text: HE D I MflSS4SS aOQTOlO 2 | Data Sheet No. PD-9.474B INTERNATIONAL RE CTIFIER INTERNATIONAL RECTIFIER I« R T-39-11 HEXFET TRANSISTORS IR F234 IR F235 NCHANNEL 250 Volt, 0.45 Ohm HEXFET The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors.


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    PDF T-39-11 4fl5545H IRF234, IRF235 k3226 LD 7751 os lg washing machine control circuit lg washing machine irf234 n washing machine lg IRF234 F234

    idm 73

    Abstract: IRF244
    Text: H EXFET Power MOSFETs International S<Ei R e c tifie r Hermetic Package TO-3 N-Channel Part Number Vos Drafn Roston Source Voltage Volts) On-State Resistance (Ohms) Iq Continuous Drain Current 25°C Case (Amps) IDM Drain Current (Amps) Pq Max Power Dissipation


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    PDF IRF223 IRF221 IRF233 IRF231 IRF243 IRF241 IRF253 IRF251 IRF222 IRF220 idm 73 IRF244

    irf113

    Abstract: 1RF243 irf244 IRF242 IRF243 IRF245 IRF252 1RF222
    Text: - ft A gj £ *± Vd s or € £ Vg s Ig s s Pd Id * /CH Vd g a t§ <Ta=25^C V g s th) Id s s rain * /CH Id nA) & F os(on) Vd s = Vg s max ft & Id (on) Ciss g fs Coss ft Crss Vg s =0 (max) *typ V g s (0) (V) *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (*typ) (*typ)


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    PDF T0-204AA O-204AA RF240 TQ-204AE IRF242 T0-204AE IRF243 O-204AE IRF250 irf113 1RF243 irf244 IRF242 IRF243 IRF245 IRF252 1RF222

    1RF350

    Abstract: 1RF320 irf244 IRF242 IRF243 IRF245 IRF252 1RF450 Siliconix
    Text: - ft A gj £ *± Vd s or € £ Vg s Pd Id m a t § <Ta=25^C Ig s s Vg s Id s s th) ft & F os on) Vd s = & I d (on) Coss Ciss g fs * /CH rain * /CH Vg s = 0 (*typ) (*typ) (*typ) Id *typ Vg s *typ Id (max) (max) (max) Vd s (A) (A) (V) (S) (A) (pF) (pF) (pF)


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    PDF T0-204AA O-204AA RF240 TQ-204AE IRF242 T0-204AE IRF243 1RF442 1RF350 1RF320 irf244 IRF242 IRF243 IRF245 IRF252 1RF450 Siliconix

    irf211

    Abstract: irf244 Irf154 IRF154 N IRF242 IRF243 IRF245 IRF252 1RF240
    Text: - ft A gj £ *± Vd s or € £ Vg s Pd Id * /CH Vd g a t § <Ta=25^C I gss rain * /CH Vg s * V ) (V ) (W) (A ) Vg s t h ) I dss (n A ) (V ) (H A ) (V ) (V ) (V ) Id (n A ) ft & I d (o n ) C is s g fs C oss ft C rss Vg s =0 (m ax) * ty p (0 ) Vg s (V ) * ty p


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    PDF T0-204AA O-204AA RF240 TQ-204AE IRF242 T0-204AE IRF243 IRF231 IRF232 IRF233 irf211 irf244 Irf154 IRF154 N IRF242 IRF243 IRF245 IRF252 1RF240

    irf244

    Abstract: IRF242 IRF243 IRF245 IRF252
    Text: - ft A gj £ *± Vds or € £ Vgs Pd Id * /CH Vdg a t§ <Ta=25^C I gss rain * /CH Vg s * V) (V) (W) (A) Vgs th) I dss (nA) (V) (H A ) (V) (V) (V) Id (nA) ft & I d (on) Coss Ciss g fs ft Crss Vgs =0 (max) *typ (0 ) Vg s (V) *typ (A) Id (A) Vgs (V) *typ (S)


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    PDF T0-204AA O-204AA RF240 TQ-204AE IRF242 T0-204AE IRF243 O-204AE IRF25I 10-204AE irf244 IRF242 IRF243 IRF245 IRF252

    IRFP237

    Abstract: IRFP234 IRFP235 IRF246 IRF640R IRF627 irfp236 IRFP255 1RF632 IRF244
    Text: TH OH SO N/ D I S T R I B U TOR 5ñE D T05t.fl73 QD D S 7 1 D 713 TCSK Power M O S F E T s R u gge d -Se rie s Power M O S F E T s — N -Channel continued 0.45 0.60 0.70 0.80 1.80 2 2.20 2.50 3 3.5 4 4.5 5 5.5 8 9 16 18 25 30 250 3.30 3.80 6.50 8.10 13


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    PDF T05tifl73 QDDS71D IRF232R IRF230R IRF242R IRF240R IRF252R IRF250R IRFF212R IRFF210R IRFP237 IRFP234 IRFP235 IRF246 IRF640R IRF627 irfp236 IRFP255 1RF632 IRF244