BVEB Search Results

2N1015

Abstract: 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B
Contextual Info: POWER TRANSISTORS *•* PT TYPE NO. TO-82 m MAXIMUM RATINGS 25*C BVcbo BVctt» BVebo le V V V A Watts hft MIN MÀX le A * Va V _ Sat Test Voltages Conditions le fa I ebo Va V« V A ma V A 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5

2N424

Abstract: 2N1722 2N389 to-53 2N389A 2N5067 2N5068 2N5630 2N5631 2N5632
Contextual Info: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2

Contextual Info: 2N 4123 NPN SILICO N IV IIC R O PLANAR EPITAX IA L bvebo C o lle cto r C utoff C urrent JCB0 Em itter Cutoff Current ^EBO Base-Em itter S aturation Voltage DC Current Gain SYMBOL BVCB0 bvceo MICRO FI F P T P O N ir^ I TH l\ V / lllV < 0 1 .1 V . MIN 40 30

NTE37

Abstract: NTE43 NTE50 NTE175 NTE36 NTE42 NTE45 T0126 T066 NTE55
Contextual Info: BI-POL AR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) •c BVCBo BVCeo BVEbo »FE Pd «T 12 160 140 6 100 100 15 2 400 350 6 50 35 20 7a 0.5 300 300 3 92 20 SIP-5 8a 0.05 100 100 5 400 Min 0.2/Unit 0.4 Total 100

H11G1 datasheet

Abstract: H11G1 H11G3 H11G2 Photodarlington
Contextual Info: Optoelectronics Products High Voltage Photodarlington Output with integral base-emitter resistor ; DC Sensing Input Part Number CTR @10 mA IF (%) Min BVCEO(V) BVCBO(V) BVEBO(V) tON/tOFF(µs) Max Min Min Min Max VISOACRMS (kV)1 minute 6-Pin Package H11G1 1000

Contextual Info: POWER DARLINGTONS TYPE NO. PT MAXIMUM RATINGS @ 25'C BV cbo B V ceo BVebo Ic V V Watts V A Ic VCE A V Sat Test Voltages Conditions VCE Ib V be Ic I ebo V V A A ma hFE MIN MAX 2N2226 150 50 50 15 10 250 2000 4 6 3.5 4 9 .15 30 2N2227 150 100 100 15 10 250 2000 4

ECG189

Abstract: ECG181 ECG162 ECG164 ECG186A ECG179 # Frequency at which common emitter current gain is 70.0 of low frequency gain ECG180 ECG172A ECG188
Contextual Info: Transistors cont'd E C G Type D escrip tio n and A pplicatio n (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To B a se V o lts Collector To Em itter V olts B a se to Em itter V o lts b v CBO b v CEO bvebo M ax. D e v ice D iss. P p W atts

C9853

Contextual Info: I\NE5 C9853 ^1 P ^NEW ENGLAND SEM ICONDUCTOR LOW LEVEL SWITCHING SILICON EPITAXIAL JUNCTION PNP TRANSISTORS • LOW (EC (sat • HIGH BVebo • ULTRA LOW LEAKAGE • LOW C* ELECTRICAL DATA ABSOLUTE MAXIMUM RATINGS MMMCTM SYMBOL UNITS C9S53 Collector To Emitter Voliate

germanium transistors PNP

Abstract: transistor t05 2n404 mw 137 NKT11 NKT139 2N1303 2N 1309 NKT135 2n 1305
Contextual Info: PNP Germanium Transistors PIMP Germanium RF A lloy Transistors in T 0 1 and T 0 5 metal cases Characteristics at T amb=25°. M axim um ratings Type Case B VCEO V Bvcso bvebo V V XCM mA mW JJM °C hF E ^ C E / i C V /m A ) pt o t ' h/rf ^ C E ^ Ó (V /m A I

germanium transistor ac 128

Abstract: germanium transistors NPN AC128 germanium af transistors germanium transistors pnp germanium npn pnp germanium transistor AC 128
Contextual Info: High Dissipation Germanium Transistors PIMP and NPN A F Alloy Transistors in T 0 1 metal case Type BVceo bvebo V V V 1CM A w °c hF E ^ v C B / ld V/ma f T ^VC E /'c1 MHz (V /m A I uA (V) — 16 32 32 10 10 1.0 1.0 0.22 0.22 90 90 60 . 175 (0/300) 6 0 . 175 (0/300)

switch NPN

Abstract: BSY18 2N2369 2n4390
Contextual Info: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV

PN5133

Contextual Info: DtVICE TYPE PA C KAG E BVCEO BVCBO BVEBO ICBO @ VCB IVI M I N {VI M I N IVI M I N 1-.A MA X IVI HFE VC & 1C MIN MAX | V1 COB FT l|.IIM A * iM H /| 150 150 4 2 50 15 15 16 3 5 10 250 250 300 150 200 l*tA l PN4962 PN4963 PN5126 P N 5 I2 7 PN5128 N PN NPN

2n3547

Abstract: 2N3549
Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. 2N2896 2N2897 DESCRIPTION (V) (V) (V) (l*A) MIN MIN MIN MAX *ICES "IC E V e ic h FE BVCBO BVCEO BVEBO •CBO « VCBO (mA) (V) MIN VCE V C E (S i iT) IC Cob (V) (V) (mA) MAX MAX (pF) MAX n- NF ton

1ff TRANSISTOR SMD MARKING CODE

Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
Contextual Info: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369

diode t48

Abstract: ECG2302 ECG2305 t48 diode ECG488 ECG2300 ECG2310 ECG481 ECG2312 ECG2307
Contextual Info: Transistors cont'd Collector To Base Volts BVceo Description and Application ECG Type ECG478 ¡ 1 ECG479 (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Emitter Volts bvceo Base to Emitter Volts BVeb O Max. Collector Current Ig Amps Max.

2N4425

Abstract: GES6220-J1 2N3404 2N3405 GES6220 HS5306
Contextual Info: Sm all signal Transistors TO-92HS Case PD @ TC =25°C =1 0Watt TYPE NO. 2N3402 POLARITY BVc b o BVc e O NPN bveb0 >CBO v CBO <V) (V) (V) <nA) MIN MIN MIN MAX 25 25 5.0 100 hl•E 00 MIN o lC e v CE <mA) (V) MAX NF VCE(SA T ) « ' C c ob <mA) m (MHz) (dB)

SM58B

Abstract: transistor 0190 8178 LE17
Contextual Info: SILICON NPN TRANSISTOR SM58B • Advanced Distributed Base Technology • Designed For Use In Electronic Ballast Applications • Efficient Power Switching ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated BVCBO BVCEO BVEBO IC ICM IB PD TJ Tstg

Contextual Info: FMMT491 Medium power NPN transistor in SOT23 Summary BVCEO > 60V BVEBO > 7V IC cont = 1A PD = 500mW RCE(sat) = 160m⍀ at 1A Complementary part number : FMMT591 Description C Medium power planar NPN bipolar transistor. Features • VCE(sat) maximum specification improvement

2N1620

Abstract: 2N1211 N5069 2N1886 2N2032 2N5631 JANTX 2N389 2N389A 2N5067 2N5068
Contextual Info: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2

Contextual Info: r le = 5.0 AMPS CONTINUED DATA P D@ 100°C <§> BVeb0 VOLTS JZ DEVICE VcE VcE sat @ lc SHEET 5.0 0.75 4.5 4.5 0.5 0.075 0.8 0.8 15 15 4.0 4.0 1.0 1.0 1.0 2.5 2.5 2.5 0.25 0.25 0.25 4.0 4.0 4.0 5.0 5.0 5.0 10.0 1.5 1.5 0.6 0.9 5.0 5.0 5.0 5.0 0.5 0.5 0.5 0.5

ZXTN5551

Abstract: sot223 marking 840
Contextual Info: A Product Line of Diodes Incorporated ZXTN5551G 160V NPN VOLTAGE TRANSISTOR Features • • • • • • • • Mechanical Data BVCEO > 160V BVEBO > 6V IC = 600mA Continuous Collector Current Low Saturation Voltage 150mV max @10mA hFE specified up to 50mA for a high gain hold up

Contextual Info: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BVEbo

transistor 13003L

Abstract: APT13003LZ
Contextual Info: A Product Line of Diodes Incorporated Green APT13003L 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 450V   BVCES > 700V   BVEBO > 9V  IC = 0.8A high Continuous Collector Current  Lead-Free Finish; RoHS Compliant Notes 1 & 2

GU13005S

Contextual Info: A Product Line of Diodes Incorporated Green APT13005S 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 450V   BVCES > 700V   BVEBO > 9V  IC = 3.2A high Continuous Collector Current  Lead-Free Finish; RoHS Compliant Notes 1 & 2