BYY 48 Search Results

BYS 045

Abstract: BYS 045 v 72 BYY 56 byy 24 byy 57 1200 D 400 2200 E VRRM VRSM VBR byy 48 2209 n DA 6/1400
Contextual Info: Low Power Diodes Kleine Leistungsdioden Rectitier diodes Type VRRM V IFSM A IFAVM A trr °C/W tvj max °C 6 - 150 IFSM A IFAVM tvj max °C 10 ms, tvj = tvj max D 6/ 1200.1600 100 Controlled avalanche diodes Type VRRM V VBR A A 10 ms, tA = 45°C tvj = tvj max

D405N

Abstract: AEG T 51 N 1200 AEG D 251 N 1200 D24NR d629n aeg tt 18 n 1200 BYY 56 aeg tt 46 n 1200 D 4409 N 200 AEG T 670 N 2200
Contextual Info: 1 7E D • GDSTMSb G 0 D 1 3 2 T ö ■ T - O l- O l Leistungsdioden Power diodes Diodes de puissance Typ Ifrmsm Vrrm Type V' A Ifsm t-10nns M= Wjmax 45°C t-10nns M“ Wjmax 45°C kA kA A s A*s Ifavm/*c IpAVM A/°C tA=45*C 120°el. rec. A V TO tA =35aC

LG 5804

Contextual Info: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that

A004R

Abstract: RO4350 VMMK-1218 VMMK-1218-BLKG USL10
Contextual Info: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that

D668N

Abstract: D798N400 d629n D4409 Leistungsdiode d452 BYY 56 D4409N D668N2000 D668
Contextual Info: A E G - A K T I EN GE SEL LS CHAFT 17E D • QOBWS 1 ■ AEGG Leistungsdioden Power diodes Diodes de puissance Typ Type V rrm If r m s m V' A If s m /¡ 2dt t-10nn* «vp •vjnnax 45°C t-IOnn* M" 45°G •vjmax kA kA fl?S A*s If a v m / ì c If a v m V TO

RTM 866 - 480

Abstract: SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790
Contextual Info: Halbleiter­ bauelemente 1972/73 INTERMETALL H albleiterwerk der Deutsche ITT Industries GmbH ITT Alphabetisches Typenverzeichnis Typ S eite Typ S eite Typ Seite 1 N 914 42 2 N 3055 38 BB 121 1 N914A 1 N914B 1 N 3604 42 42 42 2 N 3962 33 BB 122 2 N 3963 2 N 3964

MM3Z20VT1

Contextual Info: SOD-323 Sma ll ssigna igna l zzene ene r d diode iode s 0.016 0.40 0.057(1.45) 200 mW Po Power wer diss ipat ion 0.010(0.25) 0.045(1.15) 0.070(1.80) Idea l fo forr ssurfac urfac e m moun oun tted app applicat licat ion 0.063(1.60) Zene r b break reak dow n vvolta

DIODE marking S4 59A

Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
Contextual Info: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3

AAJFK

Contextual Info: 9?,'@ +'4? 4VVS=>AB=฀#:A0<฀&<,9=4=>:< #<:/?.>฀%?88,<C 7LHZ[XLY X฀5FIC;N@;<฀9<JK฀+ &, &ba฀@E฀2- X฀*FN<JK฀=@>LI<฀F=฀D<I@K฀0IH฀O฀/Z . "1฀9N]`Tk //* P + >M#ba$&`Tk *(+.*  .2 a= * Z&glc X฀3CKI8฀CFN฀>8K<฀:?8I>< X฀#OKI<D<฀;M ;K฀I8K<;

Contextual Info: 9?,'@ 004? 4VVS=>AB=฀#:A0<฀&<,9=4=>:< #<:/?.>฀%?88,<C 7LHZ[XLY X฀*FN<JK฀=@>LI< F=฀ D<I@K฀0 IH฀O฀/Z X฀3CKI8฀CFN฀>8K<฀:?8I>< - "1฀9N]`Tk //* P + >M#ba$&`Tk *(+33  -. a= * Z&glc X฀#OKI<D<฀;M ;K฀I8K<; X฀&@>?฀G<8B฀:LII<EK฀:8G89@C@KP

A004R

Abstract: MM20 RO4350 VMMK-1218 VMMK-1218-BLKG 802.11abgn
Contextual Info: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that

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ZPD 5.1 ITT

Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Contextual Info: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers

Contextual Info: 9?3,'@ 004? 4VVS=>AB=฀#:A0<฀&<,9=4=>:< #<:/?.>฀%?88,<C 7LHZ[XLY W฀*FM<IJ฀=@>KH<฀F=฀D<H@J฀0-,฀N฀/Z W฀3CJH8฀CFM฀>8J<฀:?8H>< - "1฀9N]`Tj //* P + >M#ba$&`Tj *(+33  -. a= * Z&fkc W฀#NJH<D<฀;L ;J฀H8J<; W฀&@>?฀G<8B฀:KHH<EJ฀:8G89@C@JO

Contextual Info: 9?9,'@ ,'4? 4VVS=>Aa฀#:A0<฀&<,9=4=>:< #<:/?.>฀%?88,<C 7LHZ[XLY X฀*FN<JK฀=@>LI< F= D<I@K฀0 IH฀O฀/Z X฀3CKI8฀CFN฀>8K<฀:?8I>< - "1฀9N]`Tk //* + >M#ba$&`Tk * ,/*  ,1 a= * Z&glc P X฀#OKI<D<฀;M ;K฀I8K<; X฀&@>?฀G<8B฀:LII<EK฀:8G89@C@KP

LG 5804

Abstract: VMMK-1218-BLKG RGS 13/1 PHEMT marking code a BYY 56 byy 88 A004R MM20 RO4350 VMMK-1218
Contextual Info: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that

Contextual Info: 9?3,'@ ,'4? 4VVS=>AB=฀#:A0<฀&<,9=4=>:< #<:/?.>฀%?88,<C 7LHZ[XLY W฀*FM<IJ฀=@>KH<฀F=฀D<H@J฀0IH฀N฀/Z W฀3CJH8฀CFM฀>8J<฀:?8H>< - "1฀9N]`Tj //* P + >M#ba$&`Tj * ,/*  ,1 a= * Z&fkc W฀#NJH<D<฀;L ;J฀H8J<; W฀&@>?฀G<8B฀:KHH<EJ฀:8G89@C@JO

Contextual Info: 9?9,'@ 004? 4VVS=>AE฀#:A0<฀&<,9=4=>:< #<:/?.>฀%?88,<C 7LHZ[XLY X฀*FN<JK฀=@>LI< F=฀ D<I@K฀0 IH฀O฀/Z X฀3CKI8฀CFN฀>8K<฀:?8I>< - "1฀9N]`Tk //* P + >M#ba$&`Tk *(+33  -. a= * Z&glc X฀#OKI<D<฀;M ;K฀I8K<; X฀&@>?฀G<8B฀:LII<EK฀:8G89@C@KP

Contextual Info: 9?9,'@ +'4? 4VVS=>Aa฀#:A0<฀&<,9=4=>:< #<:/?.>฀%?88,<C 7LHZ[XLY X฀5FIC;N@;<฀9<JK฀+ &, &ba฀@E฀2- X฀*FN<JK฀=@>LI<฀F=฀D<I@K฀0IH฀O฀/Z . "1฀9N]`Tk //* P + >M#ba$&`Tk *(+.*  .2 a= * Z&glc X฀3CKI8฀CFN฀>8K<฀:?8I>< X฀#OKI<D<฀;M ;K฀I8K<;

SW2100D

Abstract: RFSW2100D ds1303
Contextual Info: R RFSW2 2100D 55W GaN-on-SiC Refflective SPD DT RF Switch Bare Die 1mm x 0.8m mm Features • Broadban nd Operation 30 0MHz - 6GHz  Advanced d GaN HEMT Tecchnology  2GHz Typical Performancce o Insertio on Loss = 0.34d dB o Isolation = 37dB o P0.1dB of

Contextual Info: 9?E,'@ +'4? 4VVS=>AB=฀#:A0<฀&<,9=4=>:< #<:/?.>฀%?88,<C 7LHZ[XLY X฀5FIC;N@;<฀9<JK฀+ &, &ba฀@E฀2- X฀*FN<JK฀=@>LI<฀F=฀D<I@K฀0IH฀O฀/Z . "1฀9N N]`Tk //* P + >M#ba$&`Tk *(+.*  .2 a= * Z&glc X฀3CKI8฀CFN฀>8K<฀:?8I>< X฀#OKI<D<฀;M ;K฀I8K<;

Contextual Info: 9?E,'@ 004? 4VVS=>AB=฀#:A0<฀&<,9=4=>:< #<:/?.>฀%?88,<C 7LHZ[XLY X฀*FN<JK฀=@>LI<฀F=฀D<I@K฀0IH฀O฀/Z X฀3CKI8฀CFN฀>8K<฀:?8I>< - "1฀9N N]`Tk //* P + >M#ba$&`Tk *(+33  -. a= * Z&glc X฀#OKI<D<฀;M ;K฀I8K<; X฀&@>?฀G<8B฀:LII<EK฀:8G89@C@KP

Contextual Info: 9?E,'@ ,'4? 4VVS=>AB=฀#:A0<฀&<,9=4=>:< #<:/?.>฀%?88,<C 7LHZ[XLY X฀*FN<JK฀=@>LI< F= D<I@K฀0 IH฀O฀/Z X฀3CKI8฀CFN฀>8K<฀:?8I>< - "1฀9N N]`Tk //* P + >M#ba$&`Tk * ,/*  ,1 a= * Z&glc X฀#OKI<D<฀;M ;K฀I8K<; X฀&@>?฀G<8B฀:LII<EK฀:8G89@C@KP

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5