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    BYY 57 1200 Search Results

    BYY 57 1200 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPN12006NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 20 A, 0.0120 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPN12008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    CS1200 Coilcraft Inc Current Sense Transformer, 35A, 1:200 Visit Coilcraft Inc Buy
    CS1200L Coilcraft Inc Current Sense Transformer, 35A, 1:200, ROHS COMPLIANT Visit Coilcraft Inc Buy
    HPH5-1200LD Coilcraft Inc General Purpose Inductor, 173uH, 25%, 1 Element, Ferrite-Core, SMD, ROHS COMPLIANT Visit Coilcraft Inc

    BYY 57 1200 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BYY57-1200 Diodes Incorporated Silicon Power Rectifier Diode Original PDF

    BYY 57 1200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BYS 045

    Abstract: BYS 045 v 72 BYY 56 byy 24 byy 57 1200 D 400 2200 E VRRM VRSM VBR byy 48 2209 n DA 6/1400
    Text: Low Power Diodes Kleine Leistungsdioden Rectitier diodes Type VRRM V IFSM A IFAVM A trr °C/W tvj max °C 6 - 150 IFSM A IFAVM tvj max °C 10 ms, tvj = tvj max D 6/ 1200.1600 100 Controlled avalanche diodes Type VRRM V VBR A A 10 ms, tA = 45°C tvj = tvj max


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    Untitled

    Abstract: No abstract text available
    Text: Finisar Productt Specificaation Multiprotoccol 80Km m, 10Gb/ss DWDM M XFP Op ptical Trransceiver FTLX X3815M33xx PRODU UCT FEATU URES • Gb/s to 11.35 5Gb/s Supports 8.5G • Hot-pluggabl H le XFP footp print • RoHS-6 R Com mpliant lead-free • 100GHz ITU Grid, C-Ban


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    PDF 10Gb/s X3815M3 100GHz DW100S-2Dx DW100C-2Ax

    ZTX653 equivalent

    Abstract: ZTX753 equivalent fzt651 ZDT1049 ztx1056A ztx651 equivalent equivalent FZT651 zldo 17 50 1N4148 SOD323 DIODE S4 58A
    Text: SELECTION GUIDE Discrete semiconductors Bipolar transistors | Diodes | MOSFETs Discrete semiconductors Bipolar transistors Zetex Semiconductors provides product designers with a broad range of discrete semiconductor components renowned for their quality, high performance and optimized


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    PDF 2002/95/EC) ZTX653 equivalent ZTX753 equivalent fzt651 ZDT1049 ztx1056A ztx651 equivalent equivalent FZT651 zldo 17 50 1N4148 SOD323 DIODE S4 58A

    ZTX653 equivalent

    Abstract: ZDT6790 ZXGD3003E6 transistor equivalent ztx1053a ZTX753 equivalent ZDT1049 fmmt417 SOT23-6 NMOS 150V ZTX415 equivalent FZT651
    Text: Version 5.0 Discrete and standard IC product guide Discrete and standard IC product guide Zetex Semiconductors is a specialist in analog technology. We design and manufacture semiconductor solutions for the management of power and analog signals in high performance products.


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    PDF 2002/95/EC) ISO/TS16949 ZTX653 equivalent ZDT6790 ZXGD3003E6 transistor equivalent ztx1053a ZTX753 equivalent ZDT1049 fmmt417 SOT23-6 NMOS 150V ZTX415 equivalent FZT651

    K D882 Y 139

    Abstract: No abstract text available
    Text: OMAP5910 Dual-Core Processor Data Manual Literature Number: SPRS197D August 2002 - Revised August 2004 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include


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    PDF OMAP5910 SPRS197D SPRS197C SPRS197D K D882 Y 139

    TRANSISTOR J 5804

    Abstract: d998 TRANSISTOR D880 TRANSISTOR transistor D998 dp 104c d998 d880 D844 transistor D844 voltage regulator transistor d880
    Text: OMAP5910 Dual-Core Processor Data Manual Literature Number: SPRS197D August 2002 − Revised August 2004 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include


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    PDF OMAP5910 SPRS197D MPBG179A S-PBGA-N289) 4173512-6/D TRANSISTOR J 5804 d998 TRANSISTOR D880 TRANSISTOR transistor D998 dp 104c d998 d880 D844 transistor D844 voltage regulator transistor d880

    Untitled

    Abstract: No abstract text available
    Text: OMAP5910 Dual-Core Processor Data Manual Literature Number: SPRS197D August 2002 − Revised August 2004 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include


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    PDF OMAP5910 SPRS197D MPBG179A S-PBGA-N289) 4173512-6/D

    JR 3610

    Abstract: 980E optical electronics 9818
    Text: OMAP5910 Dual-Core Processor Data Manual Literature Number: SPRS197D August 2002 − Revised August 2004 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include


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    PDF OMAP5910 SPRS197D MPBG179A S-PBGA-N289) 4173512-6/D JR 3610 980E optical electronics 9818

    TAG 8409

    Abstract: SPRU891
    Text: OMAP5910 Dual-Core Processor Data Manual Literature Number: SPRS197D August 2002 − Revised August 2004 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include


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    PDF OMAP5910 SPRS197D TMDSFDCATM31 TMDSFDCFPC31 TMDS3P701014 XDS560 TMDSDSK5510 SPRC100 SPRC115 SPRC101 TAG 8409 SPRU891

    d998 TRANSISTOR

    Abstract: transistor D998 D880 TRANSISTOR d986 d998 D998 TRANSISTOR datasheet D986 TRANSISTOR transistor D896 DP 104c transistor D880
    Text: OMAP5910 Dual-Core Processor Data Manual Literature Number: SPRS197D August 2002 − Revised August 2004 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include


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    PDF OMAP5910 SPRS197D MPBG179A S-PBGA-N289) 4173512-6/D d998 TRANSISTOR transistor D998 D880 TRANSISTOR d986 d998 D998 TRANSISTOR datasheet D986 TRANSISTOR transistor D896 DP 104c transistor D880

    JR 3610

    Abstract: d998 transistor D880 D884 transistor D886 D880 CIRCUIT block DIAGRAM transistor d998 transistor d880 SPRS197D M50 .0022
    Text: OMAP5910 Dual-Core Processor Data Manual Literature Number: SPRS197D August 2002 − Revised August 2004 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include


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    PDF OMAP5910 SPRS197D MPBG179A S-PBGA-N289) 4173512-6/D JR 3610 d998 transistor D880 D884 transistor D886 D880 CIRCUIT block DIAGRAM transistor d998 transistor d880 SPRS197D M50 .0022

    d998 transistor

    Abstract: D880 TRANSISTOR d914 d998 transistor D998 D852 transistor TRANSISTOR J 5804 D880 D882 to 92 K D882 Y 139
    Text: OMAP5910 Dual-Core Processor Data Manual Literature Number: SPRS197D August 2002 − Revised August 2004 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include


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    PDF OMAP5910 SPRS197D MPBG179A S-PBGA-N289) 4173512-6/D d998 transistor D880 TRANSISTOR d914 d998 transistor D998 D852 transistor TRANSISTOR J 5804 D880 D882 to 92 K D882 Y 139

    Untitled

    Abstract: No abstract text available
    Text: OMAP5910 Dual-Core Processor Data Manual Literature Number: SPRS197D August 2002 − Revised August 2004 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include


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    PDF OMAP5910 SPRS197D MPBG179A S-PBGA-N289) 4173512-6/D

    D882 P K6

    Abstract: transistor 702E D898 cdma rxr design implementation
    Text: OMAP5910 Dual-Core Processor Data Manual Literature Number: SPRS197D August 2002 − Revised August 2004 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include


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    PDF OMAP5910 SPRS197D MPBG179A S-PBGA-N289) 4173512-6/D D882 P K6 transistor 702E D898 cdma rxr design implementation

    Untitled

    Abstract: No abstract text available
    Text: Low Power Diodes Rectifier diodes Ifsm I favm trr outline V A 10 m s, tvj ~ tvj max A °C/W Io D 6/ j ° Type 1200.1600 100 6 - 150 151 I fa v m V rrm Cathnrift 151 Controlled avalanche diodes Type V rrm V DA 3 / DA 6 / V br Ifs m A A 10 ms, tA = 45°C tvj = tvj max


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    PDF 57/58-E

    BYY 56

    Abstract: byy 57 1200 OA61 BYY57 BYS 98-50 byy57e BYy5758
    Text: Low Power Diodes Rectifier diodes V rrm V Ifsm Ifavm trr outline A 10 ms, A °c /w lo Type 100 6 - 150 151 V br A 1 0 ms, Ifsm Ifavm tvj max outline A A °C C a th o r iA tv, ~ tvj max D 6/ 1200. 1600 151 Controlled avalanche diodes T ype VrrM V tA = 4 5 °C


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    PDF --i-76- -28minâ 57/58-E BYY 56 byy 57 1200 OA61 BYY57 BYS 98-50 byy57e BYy5758

    Untitled

    Abstract: No abstract text available
    Text: Silicon rectifier diodes BYY57/BYY 58 FEATURES • Forward current 35 A • Reverse voltage 75 V - 1500 V • hermetic press-fit package • Available in different modifications of the package APPLICATIONS • Rectifying in car generators • Power supplies


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    PDF BYY57/BYY BYY57 BYY58 57/6e

    D405N

    Abstract: AEG T 51 N 1200 AEG D 251 N 1200 D24NR d629n aeg tt 18 n 1200 BYY 56 aeg tt 46 n 1200 D 4409 N 200 AEG T 670 N 2200
    Text: 1 7E D • GDSTMSb G 0 D 1 3 2 T ö ■ T - O l- O l Leistungsdioden Power diodes Diodes de puissance Typ Ifrmsm Vrrm Type V' A Ifsm t-10nns M= Wjmax 45°C t-10nns M“ Wjmax 45°C kA kA A s A*s Ifavm/*c IpAVM A/°C tA=45*C 120°el. rec. A V TO tA =35aC


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    PDF G0D132T t-10r BYY57/ BYY58/ 20x20 100x125 D24NR 41/mln. D3507N D405N AEG T 51 N 1200 AEG D 251 N 1200 d629n aeg tt 18 n 1200 BYY 56 aeg tt 46 n 1200 D 4409 N 200 AEG T 670 N 2200

    D668N

    Abstract: D798N400 d629n D4409 Leistungsdiode d452 BYY 56 D4409N D668N2000 D668
    Text: A E G - A K T I EN GE SEL LS CHAFT 17E D • QOBWS 1 ■ AEGG Leistungsdioden Power diodes Diodes de puissance Typ Type V rrm If r m s m V' A If s m /¡ 2dt t-10nn* «vp •vjnnax 45°C t-IOnn* M" 45°G •vjmax kA kA fl?S A*s If a v m / ì c If a v m V TO


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    PDF tA-45 BYY57/ BYY58/ 20x20 100x125 D24NR 41/mln. D668N D798N400 d629n D4409 Leistungsdiode d452 BYY 56 D4409N D668N2000 D668

    RTM 866 - 480

    Abstract: SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790
    Text: Halbleiter­ bauelemente 1972/73 INTERMETALL H albleiterwerk der Deutsche ITT Industries GmbH ITT Alphabetisches Typenverzeichnis Typ S eite Typ S eite Typ Seite 1 N 914 42 2 N 3055 38 BB 121 1 N914A 1 N914B 1 N 3604 42 42 42 2 N 3962 33 BB 122 2 N 3963 2 N 3964


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    PDF N914A N914B RTM 866 - 480 SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790

    ZPD 5.1 ITT

    Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
    Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers


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    PDF F-92223 D-7800 ZPD 5.1 ITT ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode

    IC 7447

    Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
    Text: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222


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    AC125K

    Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
    Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T


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    PDF 76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram

    Diode KD 514

    Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
    Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381


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