BYY 59 Search Results

IBGT

Abstract: byy 62 hb baz tbaz 3307
Contextual Info: 42*+|+{42*+|+. 293z6.7: /98=;9661; 2DAPQNDO u McXV\T_ \agXZeTgX V\eVh\g. ZbbW cXeYbe`TaVX u McXV\T_ [\Z[/cXeYbe`TaVX VbagTVgf. h_geT/_baZ X_XVge\VT_ XaWheTaVX u MheYTVX `bhag\aZ gXV[ab_bZk. TWiTaVXW VeTYgjbe^ u Mb_\W UTfX WXf\Za. fgTU_X fgehVgheX =SLGBAH .LLHGBAPGKJO

BYS 045

Abstract: BYS 045 v 72 BYY 56 byy 24 byy 57 1200 D 400 2200 E VRRM VRSM VBR byy 48 2209 n DA 6/1400
Contextual Info: Low Power Diodes Kleine Leistungsdioden Rectitier diodes Type VRRM V IFSM A IFAVM A trr °C/W tvj max °C 6 - 150 IFSM A IFAVM tvj max °C 10 ms, tvj = tvj max D 6/ 1200.1600 100 Controlled avalanche diodes Type VRRM V VBR A A 10 ms, tA = 45°C tvj = tvj max

D405N

Abstract: AEG T 51 N 1200 AEG D 251 N 1200 D24NR d629n aeg tt 18 n 1200 BYY 56 aeg tt 46 n 1200 D 4409 N 200 AEG T 670 N 2200
Contextual Info: 1 7E D • GDSTMSb G 0 D 1 3 2 T ö ■ T - O l- O l Leistungsdioden Power diodes Diodes de puissance Typ Ifrmsm Vrrm Type V' A Ifsm t-10nns M= Wjmax 45°C t-10nns M“ Wjmax 45°C kA kA A s A*s Ifavm/*c IpAVM A/°C tA=45*C 120°el. rec. A V TO tA =35aC

D668N

Abstract: D798N400 d629n D4409 Leistungsdiode d452 BYY 56 D4409N D668N2000 D668
Contextual Info: A E G - A K T I EN GE SEL LS CHAFT 17E D • QOBWS 1 ■ AEGG Leistungsdioden Power diodes Diodes de puissance Typ Type V rrm If r m s m V' A If s m /¡ 2dt t-10nn* «vp •vjnnax 45°C t-IOnn* M" 45°G •vjmax kA kA fl?S A*s If a v m / ì c If a v m V TO

RTM 866 - 480

Abstract: SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790
Contextual Info: Halbleiter­ bauelemente 1972/73 INTERMETALL H albleiterwerk der Deutsche ITT Industries GmbH ITT Alphabetisches Typenverzeichnis Typ S eite Typ S eite Typ Seite 1 N 914 42 2 N 3055 38 BB 121 1 N914A 1 N914B 1 N 3604 42 42 42 2 N 3962 33 BB 122 2 N 3963 2 N 3964

sg 6ba

Contextual Info: ;@3,'A ,'5@ 5WWT>?BC>฀$;B1=฀'=-:>5>?;= $=;0@/?฀&@99-=D 8MI[\YMZ X฀*FN<JK฀=@>LI<฀F=฀D<I@K฀0IH฀O฀/Z X฀3CKI8฀CFN฀>8K<฀:?8I>< - "1฀9N]`Tk //* P + >M#ba$&`Tk * ,/*  ,1 a= * Z&glc X฀#OKI<D<฀;M ;K฀I8K<; X฀&@>?฀G<8B฀:LII<EK฀:8G89@C@KP

ZPD 5.1 ITT

Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Contextual Info: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

1.0 k mef 250

Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a

TRANSISTOR 132-gd

Abstract: TRANSISTORS 132 GD equivalent io transistor 131-G bbc ds diodes DS 1,8 transistor vergleichsliste aeg diode Si 61 L AF124 Transistor Vergleichsliste DDR OC1044 bbc ds diodes
Contextual Info: Vergleichsliste Halbleiter Bauelemente In h a lt: Einleitung Typenbezeichnung und Form elzeichen G e g e n ü b e r s t e ll u n g n a c h A l p h a b e t : T ransistoren G leichrichterdioden Leistungs-Zenerdioden V e rg le ic h nach T y p e n g ru p p e n

MMA-445933H-02

Abstract: mmic 4900 H02 MMA445933H MMA445933H02
Contextual Info: MMA-44 45933H-02 4.4 – 5.9 GHzz 2W High E Efficiency Lin near Power A Amplifier Decemb ber 2012 Fe eatures: • • • • • • • • Appliications: 30 dB Gain G 33 dBm m P-1dB OIP3 45 5 dBm 26.0 dB Bm Linear Po out @ 2.5% EVM E 802.11 64QAM 6

4069UBF

Abstract: 7702701CX 4069UBDMQB Dayton inverter drive RCA CD4069UB 4069UBDM 4069UBFM CMOS IC 4069UB CD4069UB 4069UBC
Contextual Info: r REVISIONS DATE D ESC R IPT IO N LTR Pgs 4, 5: A A P PR O V E D , - f - f— 3-17-78 Corrected Table I and deleted some unnecessary testing at 5V/10 V biases. Pg 7: Added Cond. A to Burn-in; separated C^n te s t in 4.4.1. Pg 8: Corrected Table I I .

Contextual Info: Finisar Productt Specificaation Multiprotoccol 80Km m, 10Gb/ss DWDM M XFP Op ptical Trransceiver FTLX X3815M33xx PRODU UCT FEATU URES • Gb/s to 11.35 5Gb/s Supports 8.5G • Hot-pluggabl H le XFP footp print • RoHS-6 R Com mpliant lead-free • 100GHz ITU Grid, C-Ban

Contextual Info: TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Frequency Range: DC - 18 GHz 47.3 dBm Nominal PSAT at 3 GHz 69.5% Maximum PAE 19.8 dB Nominal Power Gain at 3 GHz

HT121WX2-210

Abstract: tablet display 10.1 WXGA FI-JT40S-HF10 THC63LVDM83A LCD 4 X 20 FI-JH40S-HF10 lcd monitor led stripe 40 pin led screen LVDS SMD Code WY
Contextual Info: PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF HYDIS AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF HYDIS AND MUST BE RETURNED TO HYDIS UPON ITS REQUEST TITLE : HT121WX2-210 y Product Specification p Preliminary for Customer

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

IC 7447

Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
Contextual Info: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222

3776a

Abstract: TXC10 TXC10 M 60 4085bc ATT1S04 CRS11 A87L 54871 att1rx04
Contextual Info: Data Sheet August 1996 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations Features and Benefits Description • A circuit switch supporting 12 ports and providing independent connection to 1 of 4 segmented Ethernet environments:

ZTX653 equivalent

Abstract: ZTX753 equivalent fzt651 ZDT1049 ztx1056A ztx651 equivalent equivalent FZT651 zldo 17 50 1N4148 SOD323 DIODE S4 58A
Contextual Info: SELECTION GUIDE Discrete semiconductors Bipolar transistors | Diodes | MOSFETs Discrete semiconductors Bipolar transistors Zetex Semiconductors provides product designers with a broad range of discrete semiconductor components renowned for their quality, high performance and optimized

ZTX653 equivalent

Abstract: ZDT6790 ZXGD3003E6 transistor equivalent ztx1053a ZTX753 equivalent ZDT1049 fmmt417 SOT23-6 NMOS 150V ZTX415 equivalent FZT651
Contextual Info: Version 5.0 Discrete and standard IC product guide Discrete and standard IC product guide Zetex Semiconductors is a specialist in analog technology. We design and manufacture semiconductor solutions for the management of power and analog signals in high performance products.

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

EA7 SMD

Abstract: cev smd EA8 SMD N429 smd cev smd code EA2 SMD ED11 C6200 HD15 SM320C6201
Contextual Info: SM320C6201, SMJ320C6201B DIGITAL SIGNAL PROCESSORS SGUS028A – NOVEMBER 1998 – REVISED JANUARY 1999 D D D D D D D Highest Performance Fixed-Point Digital Signal Processor DSP SM320C6201 – 6.67-ns Instruction Cycle Time – 150-MHz Clock Rate – Eight 32-Bit Instructions/Cycle

TIMING DIAGRAM OF MCBSP and E1 interface

Abstract: cev smd EA8 SMD smd cev smd code EA2 tdk ed28 C6200 HD15 SM320C6201 SMJ320C6201B
Contextual Info: SM320C6201, SMJ320C6201B DIGITAL SIGNAL PROCESSORS SGUS028A – NOVEMBER 1998 – REVISED JANUARY 1999 D D D D D D D Highest Performance Fixed-Point Digital Signal Processor DSP SM320C6201 – 6.67-ns Instruction Cycle Time – 150-MHz Clock Rate – Eight 32-Bit Instructions/Cycle

TNETX3100

Abstract: EAM05 marking aaab DD35-DD0 EAM02 da05 7 segments Display 7 segment DA05 EAM01 EAM15 EAM04
Contextual Info: TNETX3100 ThunderSWITCH 10-PORT 10-/100-MBIT/S ETHERNET SWITCH SPWS031D – JUNE 1997 – REVISED OCTOBER 1997 D D D D D D D D Highly Integrated Single-Chip Shared-Memory Switch Provides Eight 10-Mbit/s Ethernet Ports and Two 10-/100-Mbit/s Ethernet Ports