BZX 650 18 Search Results

bzx 650

Abstract: BZX2C
Contextual Info: BZX2C. SILICON PLANAR POWER ZENER DIODES for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E24 standard. Other voltage tolerances and higher Zener voltages are upon request.

15 BZX

Abstract: 13 BZX bzx 180 BZX 2.7 v 18 BZX zener BZX 120 27 bzx zener BZX 180 BZX 24 bZX equivalent
Contextual Info: BZX2C. SILICON PLANAR POWER ZENER DIODES for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E24 standard. Other voltage tolerances and higher Zener voltages are upon request.

BZX 650 18

Abstract: bzx 650 BZX 24 BZX -2V5 bzx 35 BZX2C
Contextual Info: BZX2C. SILICON PLANAR POWER ZENER DIODES for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E24 standard. Other voltage tolerances and higher Zener voltages are upon request.

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

LDR 03

Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter­ bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren

934 1706 002

Contextual Info: DC Sensorgebläse Nur für OEM erhältlich S 2000 Typ 002 Kleinstgebläse für eine aktive Belüftung von Temperatursensoren zur automatischen Temperaturregelung von Kfz-Klimaanlagen. Die aktive Belüftung vermeidet Fehlmessungen durch Wärmeeinstrahlung diverser Wärmequellen. Durch den Einsatz eines elektronisch kommutierten

Contextual Info: DC Sensor Blower Only available for OEM S 2000 Type 002 Small sensor blower for active ventilation of temperature sensors used for climate control in cars. The active ventilation avoids mismeasurements due to irradiation of various heat sources. Significant reduced overall size due to the new motor technique of an external rotor motor on

axial zener diodes marking code c3v6

Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
Contextual Info: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.

IAO5 Sharp

Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Contextual Info: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The

BZX2C10V

Abstract: BZX2C11V BZX2C12V BZX2C13V BZX2C15V BZX2C16V BZX2C18V BZX2C20V BZX2C22V BZX2C24V
Contextual Info: BZX 2C SILICON PLANAR POWER ZENER DIODES Silicon Planar Power Zener Diodes for use in stabilizing and clipping circuits with high power rating. The Zener voltages are graded according to the international E 24 standard. Other voltage tolerances and higher Zener

RPY 86

Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­

TFK 680 CNY 70

Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
Contextual Info: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.

Contextual Info: CY7C1412BV18 CY7C1414BV18 36-Mbit QDR II SRAM 2-Word Burst Architecture Features Configurations • Separate independent Read and Write Data Ports ❐ Supports concurrent transactions CY7C1412BV18 – 2M x 18 CY7C1414BV18 – 1M x 36 ■ 250 MHz clock for high bandwidth

3M Touch Systems

Contextual Info: CY7C11661KV18, CY7C11771KV18 CY7C11681KV18, CY7C11701KV18 18-Mbit DDR II+ SRAM Two-Word Burst Architecture 2.5 Cycle Read Latency 18-Mbit DDR II+ SRAM Two-Burst Architecture (2.5 Cycle Read Latency) Features Functional Description • 18-Mbit density (2 M x 8, 2 M × 9, 1 M × 18, 512 K × 36)

Contextual Info: CY7C1312CV18 CY7C1314CV18 18-Mbit QDR II SRAM 2-Word Burst Architecture 18-Mbit QDR® II SRAM 2-Word Burst Architecture Features Configurations • Separate independent Read and Write Data Ports ❐ Supports concurrent transactions CY7C1312CV18 – 1M x 18

Contextual Info: CY7C1312BV18 CY7C1314BV18 18-Mbit QDR II SRAM Two-Word Burst Architecture 18-Mbit QDR® II SRAM Two-Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 250 MHz clock for high bandwidth

3M Touch Systems

Contextual Info: CY7C11461KV18, CY7C11571KV18 CY7C11481KV18, CY7C11501KV18 18-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency 18-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) Features Functional Description • 18-Mbit Density (2M x 8, 2M x 9, 1M x 18, 512K x 36)

Contextual Info: OPA659 OP A6 59 www.ti.com . SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 Wideband, Unity-Gain Stable, JFET-Input

Contextual Info: OPA659 OP A6 59 www.ti.com . SBOS342B – DECEMBER 2008 – REVISED AUGUST 2009 Wideband, Unity-Gain Stable, JFET-Input

3M Touch Systems

Contextual Info: CY7C12661KV18, CY7C12771KV18 CY7C12681KV18, CY7C12701KV18 36-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency 36-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) Features Functional Description • 36-Mbit density (4 M x 8, 4 M × 9, 2 M × 18, 1 M × 36)

3M Touch Systems

Contextual Info: CY7C12661KV18, CY7C12771KV18 CY7C12681KV18, CY7C12701KV18 36-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency 36-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) Features Functional Description • 36-Mbit density (4 M x 8, 4 M × 9, 2 M × 18, 1 M × 36)

Contextual Info: CY7C13101KV18, CY7C13251KV18 CY7C13121KV18, CY7C13141KV18 18-Mbit QDR II SRAM 2-Word Burst Architecture 18-Mbit QDR® II SRAM 2-Word Burst Architecture Features Configurations Separate independent read and write data ports ❐ Supports concurrent transactions

3M Touch Systems

Abstract: CY7C1570KV18
Contextual Info: CY7C1566KV18, CY7C1577KV18 CY7C1568KV18, CY7C1570KV18 72-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency 72-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) Features Configurations • 72-Mbit density (8 M x 8, 8 M × 9, 4 M × 18, 2 M × 36)

3M Touch Systems

Contextual Info: CY7C1546KV18, CY7C1557KV18 CY7C1548KV18, CY7C1550KV18 72-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.0 Cycle Read Latency 72-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) Features Configurations • 72-Mbit density (8 M x 8, 8 M × 9, 4 M × 18, 2 M × 36)