C 3447 DATASHEET Search Results

CHINA TV uoc

Abstract: tda95xx av 208 for Tv tuner TDA6107 TDA2615 MULTI2 philips TV tuner module PHILIPS UOC philips TV receiver modules I2C SAA7216
Contextual Info: 6298-02 SEMI Bold on Datasheet 14-02-2001 12:35 Pagina 1 This reference design combines Philips Semiconductors’ established technologies for analog TV systems with hardware / software for digital receiving and decoding, to provide a complete, highlyintegrated DVB-T DTV receiver. Easing the migration from

tdk lambda alpha 400w

Abstract: LAMBDA Alpha 600W lambda alpha ca600 Nemic Lambda alpha 600 lambda 400w mf option alpha400 LAMBDA Lambda diode CA400
Contextual Info: • Up to 16 outputs • Voltages up to 48V, Current up to 300A • Fast-on output connection • Worldwide approvals & CB report • Medical Approval Option • 3 Year Warranty Key Market Segments & Applications Instrumentation Broadcast Medical ATE Automation

Lambda VEGA 650

Abstract: klaasing Lambda VEGA 900 EN60068-2 Powerware Plus 40 EN50081-1 EN50082-2 Lambda VEGA EN61000-4-2 EN61000-4-3
Contextual Info: Vega 450, 650 & 900 Watts ¾ Industry leading Power Density ¾ 1 to 10 outputs ¾ Voltages from 0.25 – 62V ¾ Current up to 114 Amps ¾ Screw, Fast-on or IEC connection ¾ Worldwide approvals & CB report ¾ Low leakage current for Medical The world’s most configurable power supply

w2f transistor

Abstract: klaasing ibanez w2f 48 Amtek Lambda VEGA VEGA 650 Lambda VEGA 900 coutant KD 3055
Contextual Info: Vega 450 & 650 Watts ! Industry leading Power Density ! 1 to 10 outputs ! Voltages from 1.8 – 62V ! Current up to 120 Amps ! Screw, Fast-on or IEC connection ! Worldwide approvals & CB report ! Low leakage current for Medical The world’s most configurable power supply

PHILIPS SMALL SIGNAL DIODE

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page Datasheet M3D054 BAS32L/S High-speed diode Product specification 2001 Mar 01 Philips Semiconductors Product specification High-speed diode BAS32L/S FEATURES DESCRIPTION • Small hermetically sealed glass SMD package

PMLL4148

Abstract: PMLL4148L PMLL4448 100H01
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page Datasheet M3D054 PMLL4148L; PMLL4448 High-speed diodes Product specification Supersedes data of 1999 May 27 2000 Nov 15 Philips Semiconductors Product specification High-speed diodes PMLL4148L; PMLL4448 FEATURES

ST 9340

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PSSI3120CA PECL termination Product specification 2001 Jul 19 Philips Semiconductors Product specification PECL termination PSSI3120CA PINNING - SOT23 FEATURES • Single channel PECL termination in a three pin SOT23

2N7002 Philips

Abstract: 03aa03 philips 2n7002
Contextual Info: 2N7002 N-channel enhancement mode field-effect transistor Rev. 03 — 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: 2N7002 in SOT23.

BSH112

Contextual Info: BSH112 N-channel enhancement mode field-effect transistor Rev. 01 — 25 August 2000 Product specification M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSH112 in SOT23.

Contextual Info: BST82 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BST82 in SOT23.

07256

Contextual Info: BSP110 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP110 in SOT223.

Contextual Info: BSP110 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP110 in SOT223.

BSN20

Contextual Info: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.

BST82

Abstract: HZG303
Contextual Info: BST82 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BST82 in SOT23.

Contextual Info: BSP110 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP110 in SOT223.

BSN20

Abstract: HZG303
Contextual Info: BSN20 N-channel enhancement mode field-effect transistor Rev. 03 — 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSN20 in SOT23.

BUK7237-55A

Contextual Info: BUK7237-55A TrenchMOS standard level FET Rev. 01 — 29 January 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

PHX18NQ20T

Contextual Info: PHX18NQ20T N-channel enhancement mode field-effect transistor Rev. 01 — 28 August 2000 Product specification M3D308 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

Contextual Info: BUK78150-55A TrenchMOS standard level FET Rev. 01 — 30 January 2001 M3D087 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

BUK7775-55A

Contextual Info: BUK7775-55A TrenchMOS standard level FET Rev. 01 — 15 February 2001 Product specification M3D308 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

Contextual Info: BUK9230-55A TrenchMOS logic level FET Rev. 03 — 30 January 2001 Product specification M3D300 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

07584

Contextual Info: BUK7226-75A TrenchMOS standard level FET Rev. 01 — 09 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

PHT4NQ10T

Abstract: SC-73
Contextual Info: PHT4NQ10T N-channel enhancement mode field-effect transistor Rev. 01 — 31 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHT4NQ10T in SOT223.

Contextual Info: BSP030 N-channel enhancement mode field-effect transistor Rev. 04 — 26 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: BSP030 in SOT223.