C 8550 Search Results

2TY marking

Abstract: s8550lt1 marking 2TY 8550LT1 8550L
Contextual Info: M C C S O T -2 3 P la s tic -E n c a p s u ia te T r a n s is t o r s ^ ^ 1.BASE 2 .EMITTER 3.COLLECTOR S 8550LT1 TR A N SISTO R PNP FEATURES Power dissipation PCM: 0.3 W (T a m b = 2 5 r) C ollector current ICM: - 0 .5 A C ollector-base voltage V(BR)CBO:

sprague 56289

Abstract: HE 85500 56289 8550001CX E466 1A11 UHD508H UHD508 lm38510
Contextual Info: c^?r6 REVISIONS LTR DATE YR-MO-DA DESCRIPTION Change to m ilit a r y drawing fo rm a t. Page 1, change t i t l e . Page 2, change g eneric number and c i r c u i t fu n c tio n . Page 6, c o rre c t s w itc h in g te s t c i r c u i t . Page 9, c o rre c t

Contextual Info: 8550S PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 4.5±0.2 Power dissipation 0.625 W Tamb=25 C 14.3 ±0.2 PCM: Collector current ICM: 3.5 ±0.2 4.55±0.2 FEATURES

PLC-2 Communication cables pin diagram

Abstract: Allen-Bradley cable pin DH 7483 Allen Bradley PLC Communication cable pin diagram 1784-CP7 1784-KT2 PLC Communication cables pin diagram 8 pin plc cable Allen Bradley cable pinouts Allen Bradley PLC
Contextual Info: Installation Data Communication Interface Module Cat. No. 1784-KT2/C Communication Interface Module Cat. No. 1784–KT2/C Installation Data About the 1784-KT2/C Communication Interface Module The 1784–KT2/C Communication Interface Module allows you to use an

ta 8653 n

Abstract: ic dp 8600
Contextual Info: A ta b le o f c o n te n ts r c o l e c t r ic Arcolectric Introduction .Inside front cover

8550 sot-23

Abstract: CD38P BB804
Contextual Info: Tem ic BB804 S e m i c o n d u c t o r s Silicon Epitaxial Planar Dual Capacitance Diode Features • Common cathode Applications Tuning o f separate resonant circuits, push-pull circuits in FM range, especially, for car radios 94 8550 Absolute Maximum Ratings

8550 sot-23

Contextual Info: T em ic BA779-2 S e m i c o n d u c t o r s Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25 °C Symbol Value Reverse voltage

SOT-23 A2

Contextual Info: T em ic BB824 S e m i c o n d u c t o r s Silicon Epitaxial Planar Dual Capacitance Diode Features • Common cathode • High capacitance ratio Applications Tuning of separate resonant circuits, push-pull circuits in FM range, for car radios 94 8550 Absolute Maximum Ratings

8550801E

Abstract: 54LS353
Contextual Info: O E S C F O R M 193 M A Y 86 This Material C o p y r i g h t e d B y Its R e s p e c t i v e M a n u f a c t u r e r 1. SCOPE 1 .1 S co p e . T h is draw ing d e s c r ib e s d e v ic e re q u ire m e n ts f o r c la s s B m ic r o c ir c u i t s in a cco rd a n ce w ith

Contextual Info: BAT54/A/C/S Vishay Telefunken Surface Mount Schottky Barrier Diodes 94 8550 Absolute Maximum Ratings Tj = 25°C Test Conditions Symbol Value 30 Unit V 600 300 100 200 200 -55.+125 mA mA mA mA mW "C Value 500 Unit K/W II i i> >> il Parameter Repetitive peak reverse voltage

T4AS

Contextual Info: Tem ic BA779-2 S e m i c o n d u c t o r s Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled HF resistance in adjustable attenuators 94 8550 Absolute Maximum Ratings Tj = 25 °C Symbol Value Unit Reverse voltage

8550 sot-23

Contextual Info: TEMIC BAV70 S e m i c o n d u c t o r s Silicon Planar Dual Diode Features • Common cathode Applications Fast switches in thick and thin film circuits 94 8550 Absolute Maximum Ratings Tj = 25°C Parameter Test Conditions Type Reverse voltage tp=l|As Peak forward surge current

c 10 ph diode

Abstract: PH 33 G RF1007 marshall industries f 9222 l GL1F201 IS1U20 PH-708
Contextual Info: am np HA AMICAT1ÖNS: m * IR Data Communication Emitter R e c o m m en d ed c ir c u it Risonai Digital Assistant * Printer Word Pîocessor IR E m ittin g D io d e f o r IR O UIUNE DIMENSION Unit:mm D ata C o m m unicatio n (C o n fo r m s t o I r D A 1 .0 )

Contextual Info: 10 TE CH NICAL S P E C IF IC A T IO N S : ENG.IT. FOOTPRINT HOUSING LOADED PANEL PACKAGING TOOLED SPEC. NOTE4 VERSION SIZE CKTS GROUND I- M ATERIA L : 85505-5013 HOUSING: L C P G LA SS F ILLED UL 94V0 COLOR BLACK A 8 8 NO YES SHEET I TERMINAL : PHOSPHOR BRONZE PLATED WITH :

8050 NPN transistor

Abstract: 8550 NPN Transistor ebc Transistor
Contextual Info: dUDU G E N E R A L D E S C R IP T IO N :•4 H ie 8 0 5 0 is an NPN epitaxial silicon planar tran sistor designed for use in the audio ou tp u t stage and converter/inverter circuits. C om plem entary to 8550. TO-92A Note 1 Maximum Temperatures Storage Temperature

CLR35

Contextual Info: WET AND FOIL TANTALUM CAPACITORS MIL-C-39006 Established Reliability Tantalum Capacitors to Military Specification MIL-C-39006 T N ACCORDANCE with military specification MIL-C-39006, capacitors are marked with the MIL part number M 39006/XX-XXXX rather than

Contextual Info: 10 TECHNICAL SPECIFICATIONS: E H G .IT . F O O T P R IH T HO USIHG LO ADED V E R S IO H S IZ E C K TS TO O LED I- MATERIAL : A 85505-5002 HOUSING: LCPGLASS FILLED UL 94V 0 COLOR BLACK TERMINAL : PHOSPHOR BRONZE PLATED WITH: 8 8 YES PACKAGIHG S P E C . H O TE 4

s 8550 d

Abstract: s8550LT1 8550 sot-23 pnp SS8550LT1 SS8550
Contextual Info: MC C SOT-23 P la s tic -E n c a p s u la te T ra n s is to rs ^ ^ 1.BASE 2.EMITTER 3.COLLECTOR S S 8550LT 1 TR A N S IS TO R PNP 7T oi FEATURES '¿ r Power dissipation PCM: 0.625 W CTamb=25T ) Collector current ICM: -1.5 A Collector-base voltage V(BR)CBo:-40V

Contextual Info: TEXAS INSTR LOGIC SSE D aeibi7a3'oaafc1bDfl ? SN54HC192, SN54HC193 SN74HC192, SN74HC193 SYNCHRONOUS 4-BIT UP/DOWN COUNTERS (DUAL CLOCK WITH CLEAR) 02634, DECEMBER 1982 - REVISED JUNE 1989 SN 54H C 192, SN S4H C193 . . . J PACKAGE SN 74H C 192. SN 74H C 193 . . . D * OR N PACKAG E

TSG8550

Abstract: EA 002-04 TSG85501XP TSG8550XC TSG8550XJ TSG8550XP TSG8560
Contextual Info: TSG8550 S W IT C H E D CA PACITO R M A S K PR O G R A M M A B LE FILTER The T S G 8 5 5 0 is a H C M O S C auer band-pass filte r. LINEAR HCM OS1 M .P.F S W IT C H E D CA PACITO R M A S K P R O G R A M M A B LE FILTER M a in fe a tu re s: • 6 th order. • S e le c tiv ity fa cto r: Q = 7.

N13T

Contextual Info: -_-_ ~ - -.- mQx pTkz, -_-, PRODUCT SPECIFICATION molex u 1 EIMXS” -~- ’ T h i s s p e c i f i c a t i o n c o v e r s t h e MOLEX s h i e l d e d W.E. t y p e p r o d u c t l i n e wh ich comprises a shield plug male and a jack (female) I/O type connector

8550601RX

Abstract: 18714 54HCT245 113A CMOS
Contextual Info: D ESC FORM 193 MAY 86 This Material Copyrighted By Its Respective Manufacturer I ± _ i. sc o p e 1.1 Scope. T h is drawing d e sc rib e s d evice requirem ents f o r c l a s s B m ic r o c ir c u it s 1n accordance w ith

c2328a

Abstract: B564A c 2328a 8050 sot89 SD471A D471A 8550 SOT-89 63916 BC337 medium power transistors
Contextual Info: NPN Medium Power Transistors NPN Medium Power Transistors Device No. [Mark] Case Style VCES* V V CBO EBO V (V) Min (V) Min Min VCEO I CBO VCB I V hFE @ C & CE Min Max (mA) (V) (nA) @ (V) Max IC C ob (mA) @ (V) & (pF) I (V) Max (I = C ) Max Min Max B 10 V CE(SAT)

Contextual Info: TEXAS INSTR LIN /IN TFC 1ÖE D • DQ7T4Ô? □ LT1004 MICROPOWER INTEGRATED VOLTAGE REFERENCE D3190, J A N U A R Y 1969 • Initial A c cu ra cy . . . ±4 mV for LT1004-1.2 ±20 mV for LT1004-2.5 LT1004C . . . D PACKAG E (TOP VIEW ) NCn NC C NC C ANODE Ü