C-1000B MHZ Search Results

Contextual Info: BCM5500 PRODUCT Brief 10 GBPS SERIAL HIGH-SPEED TRANSCEIVER/BACKPLANE SERDES B C M 5 5 0 0 F E AT U R E S S U M M A R Y Serial Transceiver Supporting 1000B-CX, • Quad 1000B-LX, and 1000B-SX Full Duplex Operation O F B E N E F I T S • Enhanced IEEE 802.3z Ten Bit Interface TBI

BUK456-1000A

Abstract: BUK456 BUK456-1000B T0220AB
Contextual Info: N AMER P H I L I P S / D I S C R E T E BSE D • ^ 5 3 ^ 3 1 00 2 0 5 4 0 0 ■ PowerMOS transistor BUK456-1000A BUK456-1000B r - GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

BUK436W-1000B

Abstract: T0247
Contextual Info: Product specification Philips Sem iconductors Pow erM O S tran sisto r N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, DC/DC and AC/DC converters, and

Contextual Info: SIEMENS 1 M X 1 -Bit Dynamic RAM HYB 511 000B-60/-70/-80 HYB 511000BL-60/-70 Advanced Inform ation • • 1 048 576 w ords by 1-bit organization Fast access and cycle time 60 ns access time 110 ns cycle tim e HYB 5 1 1000B/BL-60 70 ns access time 130 ns cycle tim e (HYB 5 1 1000B/BL-70)

31136 remote control receiver circuit

Abstract: EPIC-1 G961 iec 2091 IOM2
Contextual Info: ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 4.3 User’s Manual 02.95 PEB 2091 V4.3 Revision History: Previous Releases: Page Original Version: 09.94 02.95 Subjects changes since last revision Update including appendix Data Classification

Q-67100-H6341

Abstract: star delta wiring diagram with timer UTC 2025 datasheet 60119 "Aplication Notes" aplication note remote control EPIC-1 MON-8L ps2 controller UTC 2025
Contextual Info: Since April 1, 1999, Siemens Semiconductor is Infineon Technologies. The next revision of this document will be updated accordingly. ATTENTION ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 4.3 User’s Manual 02.95 PEB 2091 V4.3

Contextual Info: KM616V1000B, KM616U1000B Family CMOS SRAM Document Tills 64K x16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Design target July 24, 1995 Advance 0.1 Initial draft August 12, 1995 Prelim inary 1.0

Contextual Info: SIEMENS 1 M X 1 -B it D y n a m ic R A M H Y B 5 1 1 0 0 0 B -6 0 /-7 0 /-8 0 H Y B 5 1 1 0 0 0 B L -6 0 /-7 0 Advanced Inform ation • • 1 048 576 words by 1-bit organization Fast access and cycle time 60 ns access time 1 1 0 n s cycle tim e HYB 511000B/BL-60

T3D 67 diode

Abstract: t3d diode BS6301 EFT 377 A LOA21 T3D 67 T3D 80 diode BS415 BS7002 LDA100
Contextual Info: CLARE CORPORATION bbE ]> H 2144^04 DDODPDfi T3D M C P C L Clirreilt SenSOTS Solid State Products D ivision • CPCIare C P / SOLID STATE • Solid State Current Sensors DESCRIPTION CP C lare's LDA series solid state current sensors provide an optically isolated

E76270

Abstract: T3D 67 diode t3d diode transistor c 2500 BS415 BS6301 BS7002 LDA100 LDA101 LDA110
Contextual Info: CLARE CORPORATION bbE ]> H 2144^04 DDODPDfi T3D M C P C L Clirreilt SenSOTS Solid State Products D ivision • CPCIare C P / SOLID STATE • Solid State Current Sensors DESCRIPTION CP C lare's LDA series solid state current sensors provide an optically isolated

Contextual Info: CPCIare LDA Series O O R P O R A T I O Ni LDA Series Solid State Optocoupler DESCRIPTION CP Clare’s LDA series solid state optocoupler provide an optically isolated means of switching control circuits. Applications include Telecom, Industrial Control and Instrumentation circuits, where electrical isolation of the control

Contextual Info: SIEM ENS 1M x 1-Bit Dynamic RAM HYB 511000B-60/-70/-80 HYB 511000BL-60/70 Advance Information • • • • • • • • • • • 1 048 576 words by 1-bit organization Fast access and cycle time 60 ns access time 110 ns cycle time HYB 51 1000B/BL-60

12 hour digital clock using 7490

Abstract: 24 hour digital clock using 7490 7490 bcd 7 segment ttl internal diagram of 7490 decade counter simple block diagram for digital clock with 7490 7474 pin out diagram op amp LM324 DM-3000 seven segment quad digit display red input 7490 Decade Counter pin connections
Contextual Info: □A TEL M ULTIFUNCTIO N DIGITAL PANEL METER AND COUNTER DISPLAY SYSTEMS, INC. USE AS: ► 3 d ig it OPM ► 4-wire slaved display ► 0.1% tachometer, p quency meter using crystal clock ^ DC to 10 MHz general purpose counter w ith 0 to 999 selectable fu ll count

Contextual Info: Zilog MILITARY Product Specification October 1988 Z 8 0 3 8 /Z 8 5 3 8 M ilitary FIO FIFO In p u t/ O utput Interface Unit F m Iu i m • 128-byte FIFO buffer provides asynchronous bidirectional CPU/CPU or CPU/peripheral interface, expandable to any width in byte

k428

Abstract: MC 140 transistor "MC 140" transistor K-428 transistor mc 140 diode K428
Contextual Info: 7 ^ 3 Philips Components Data sheet status Preliminary specification date of issue March 1991 N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: - P 3 9-/ÎS Data sheet status Preliminary specification date of issue March 1991 BUK638-1000A/B PowerMOS transistor Fast recovery diode FET PHI L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

K428

Abstract: MC 140 transistor "MC 140" transistor BUK428-1000B diode K428
Contextual Info: 7 ^ 3 Philips Components Data sheet status Preliminary specification date of issue March 1991 N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: N E C _¿¿PD750104.750106.750108.750104 A . 750106(A). 750108(A) 9. RESET FUNCTION The /¿PD750108 is reset with the external reset signal (RESET) or the reset signal received from the basic interval tim er/w atchdog tim er. When either reset signal is input, the internal reset signal is generated. Figure 9-1 shows the

Contextual Info: 7 Philips Components Data sheet status Prelim inary specification date of issue March 1991 N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

K638

Abstract: transistor S52 BUK638 DIODE 1000a fet 1000A
Contextual Info: Philips Com ponents Data sheet status Prelim inary specification date of issue March 1991 BUK638-1OOOA/B PowerMOS transistor Fast recovery diode FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N -channel enhancem ent m ode field-effect pow er transistor in a

siemens integrated circuit TL 2521

Abstract: ST20 ST21 ST30 ST31 CL15 ST01 ST10 ST11 PEF24911
Contextual Info: ICs for Communications Quad ISDN 2B1Q Echocanceller Digital Front End PEB 24911 Version 1.2 PEF 24911 Version 1.2 Data Sheet 12.97 DS 2 PEB 24911 Revision History: Original Version: 12.97 Previous Releases: Data Sheet 12.97 DS 1 Page Subjects changes since last revision

8050d transistor

Abstract: winbond powerspeech W523X W56000 equivalent of transistor 8050 winbond powerspeech W528X W528X 8050 TRANSISTOR equivalent w528 W562S10
Contextual Info: W562XXX DESIGN GUIDE 2-tone Melody+ADPCM Voice Synthesizer BandDirectorTM Family INTRODUCTION The W562xxx is a family of multi-engine speech synthesizers. These synthesizers incorporate part of the following parts into a single chip: a simple 4-bit uC core (including RAM, register file,

K438-1000A

Abstract: BUK438-1000A BUK438-1000B k4381
Contextual Info: 7=3 f - Æ Ph ilips C o m p o n e n ts Data sheet status Preliminary specification date o f issue March 1991 BUK438-1000A/B PowerMOS transistor SbE D PH IL IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a

BUK456-1000A

Abstract: BUK456 1000A MOS BUK456-1000B T0220AB
Contextual Info: Philips Components BUK456-1000A BUK456-1000B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,