C1 SOT23 Search Results

IC 7403

Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
Contextual Info: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch

BV03C

Abstract: DVR RXD1
Contextual Info: Application Note 1804 SLOC TW3801-C1, TW3811- C1 Application Note 1 AN1804.0 November 27, 2012 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas Inc. 2012. All Rights Reserved

SMV1236-004LF

Abstract: marking AF SMV1232 SMV1232-004 SMV1232-011 SMV1232-074 SMV1232-079 SMV1233-079 SMV1237 SMV1234-079LF
Contextual Info: DATA SHEET SMV1232–SMV1237: Hyperabrupt Tuning Varactors Features High capacitance ratio, C1 V/C3 V = 1.8, C1 V/C6 V = 3.1 Low series resistance for low phase noise ● Multiple packages SOT-23, SOD-323, SC-70 and SC-79 ● Designed for high volume commercial applications

SMV1232

Abstract: SMV1232-011 SMV1232-079 SMV1233-079 SMV1234-079 SMV1235-079 SMV1236-079 SMV1237
Contextual Info: Hyperabrupt Tuning Varactors SMV1232–SMV1237 Features • High Capacitance Ratio, C1 V/C3 V = 1.8, C1 V/C6 V = 3.1 ■ Low Series Resistance for Low Phase Noise ■ Multiple Packages SOT-23, SOD-323, SC-70 and SC-79 ■ Designed for High Volume Commercial

SMV1232

Abstract: smv1234-001 SMV1237 SMV1233-079
Contextual Info: Hyperabrupt Tuning Varactors SMV1232–SMV1237 Features • High Capacitance Ratio, C1 V/C3 V = 1.8, C1 V/C6 V = 3.1 ■ Low Series Resistance for Low Phase Noise ■ Multiple Packages SOT-23, SOD-323, SC-70 and SC-79 ■ Designed for High Volume Commercial

SMV1232

Abstract: smv1234-001 varactor diode SPICE model SMV1233-079 smv1236-011 SMV1235-011 SMV1232-011 SMV1232-079 SMV1234-079 SMV1235-079
Contextual Info: Hyperabrupt Tuning Varactors SMV1232–SMV1237 Features • High Capacitance Ratio, C1 V/C3 V = 1.8, C1 V/C6 V = 3.1 ■ Low Series Resistance for Low Phase Noise ■ Multiple Packages SOT-23, SOD-323, SC-70 and SC-79 ■ Designed for High Volume Commercial

BCW29

Abstract: 1C11
Contextual Info: SEMICONDUCTOR BCW29 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 C1 1 2 Item Marking Description Device Mark C1 BCW29 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

MMPQ2907

Abstract: SOIC-16
Contextual Info: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*

CBVK741B019

Abstract: F63TNR L86Z MMPQ2907 NDM3000 NDM3001 SOIC-16
Contextual Info: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*

Contextual Info: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*

L50RIO

Abstract: 37GL53010-C1 L53II revC1 rqw200n03 L50RI0 ITE8512E L53II L53IIX bd n49 ao4468
Contextual Info: 5 Model : L53II0 4 3 2 1 PCB P/N:37GL53010-C1 PCBA P/N:82GL53010-C1 D D Intel Merom CPU + 965GM + ICH8-M Chipset C B A PG01 PG02 PG03 PG04 PG05 PG06 PG07 PG08 PG09 PG10 PG11 PG12 PG13 PG14 PG15 PG16 PG17 PG18 PG19 PG20 PG21 PG22 PG23 PG24 PG25 PG26 PG27 PG28

ITE8512E

Abstract: rqw200n03 L50RIO 37GL53010-C1 L53II revC1 ITE8512 L50RI0 FP6137B IT8512E L53II
Contextual Info: 5 Model : L53II0 4 3 2 1 PCB P/N:37GL53010-C1 PCBA P/N:82GL53110-C1 SMSC D D Intel Merom CPU + 965GM + ICH8-M Chipset C B A PG01 PG02 PG03 PG04 PG05 PG06 PG07 PG08 PG09 PG10 PG11 PG12 PG13 PG14 PG15 PG16 PG17 PG18 PG19 INDEX SYSTEM BLOCK DIAGRAM POWER DIAGRAM & SEQUENCE

BCW29R

Abstract: BCW30
Contextual Info: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW29 BCW30 ISSUE 3 - JULY 1995_ PARTMARKING DETAILS - BCW29 BCW30 BCW29R BCW30R - C1 C2 C4 C5 COMPLEMENTARY TYPES - BCW29 - BCW31 BCW30 - BCW32 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

TO253

Abstract: transistor k 790 PLCC-20
Contextual Info: Package Information Tape and Reel Option for TSSOP, 8-Pin F BB BB E ØJ AA B H A C1 C ØK D G AA L M M1 L2 ØM L1 QL SECTION BB Siliconix 24-Sep-96 SECTION AA Dim A B C C1 D E F G H ØJ ØK L L1 L2 QL M M1 ØM Millimeters Min Max 15.70 16.30 1.65 1.85 3.50

2N3904 SOT-23

Abstract: mark E4 SOT-23 MMBT3904 1A 2n3904 transistor 2N3904 equivalent 2n3904 data sheet 2N3904 die FAIRCHILD SOT-223 MARK h 2n3904 switch fairchild
Contextual Info: 2N3904 MMBT3904 C E C B TO-92 SOT-23 E B Mark: 1A MMPQ3904 E1 PZT3904 B4 E4 B3 E3 B1 E1 B1 SOIC-16 C C4 C4 C3 C3 C2 C2 C1 E C B C1 SOT-223 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to

BCW29R

Abstract: BCW29 BCW30R BCW30 MV SOT23 PARTMARKING MV BCW31 BCW32 720 sot23 DSA003672
Contextual Info: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW29 BCW30 ISSUE 3 - JULY 1995 PARTMARKING DETAILS – BCW29 - C1 BCW30 - C2 BCW29R - C4 BCW30R - C5 E C B COMPLEMENTARY TYPES – BCW29 - BCW31 BCW30 - BCW32 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL

Contextual Info: SMBD7000/ MMBD7000 Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking SMBD7000/ MMBD7000 s5C 1 = A1 Pin Configuration 2 = C2 3=C1/A2 Package SOT23 Maximum Ratings Parameter

BAV70

Contextual Info: BAV70 Silicon Switching Diode Array 3
For high-speed switching applications
Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV70 A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage

BAV99

Abstract: free pdf transistor a7s bav99 marking diode bav A2 SOT23
Contextual Info: BAV99 Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAV99 A7s Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage

BAW56 application note

Abstract: A1s sot23 BAW56 V6010 ta1504 A2 SOT23
Contextual Info: BAW56 Silicon Switching Diode Array 3
For high-speed switching applications
Common anode 2 1 VPS05161 3 1 2 EHA07006 Type Marking BAW56 A1s Pin Configuration 1 = C1 2 = C2 Package 3=A1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR

BAV170

Contextual Info: BAV170 3 Silicon Low Leakage Diode Array
Low-leakage applications
Medium speed switching times 2
Common cathode 1 VPS05161 3 1 2 EHA07004 Type BAV170 Marking JXs Pin Configuration 1 = A1 2 = A2 3 = C1/2 Package SOT23 Maximum Ratings Parameter Symbol

a1 sot23

Abstract: BGX400
Contextual Info: BGX400 Silicon Switching Diodes 3
Switching applications
High breakdown voltage
Halfbridge rectifier 2 1 1 3 VPS05161 2 EHA07365 Type Marking BGX400 GXs Pin Configuration 1=C1/A2 2=C2 Package 3=A1 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage

BAV74

Contextual Info: BAV74 Silicon Switching Diode Array 3
For high-speed switching applications
Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV74 JAs Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage

Contextual Info: SMBD7000 Silicon Switching Diode Array 3
For high-speed switching applications
Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking SMBD7000 s5C Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage