MMPQ2222 Search Results

TF411

Abstract: national PN2222A IC VS 1307 I-00 MMBT2222A MMPQ2222 NMT2222 PN2222A PZT2222A TR46
Contextual Info: PN2222AI MMBT2222A I MMPQ2222 I NMT2222 I PZT2222A Discrete POW ER & Signa l Technologies National S e m i c o n d u c t o r ” MMBT2222A PN2222A SOT-23 PZT2222A B SOT-223 Mark: 1P NMT2222 MMPQ2222 NPN General Purpose Amplifier This device is fo r use as a medium power amplifier and

IC 7403

Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
Contextual Info: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch

Contextual Info: Central“ MMPQ2222A Semiconductor Corp. SURFACE MOUNT NPN SILICON QUAD TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR MMPQ2222A, consisting of four transistors and available in the SOIC-16 surface mount package, is designed for general purpose amplifier and switching applications.

Contextual Info: MMPQ2222A Preferred Device Quad General Purpose Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector −Emitter Voltage Symbol Value Unit VCEO 40 Vdc VCB 75 Vdc VEB 5.0 Vdc 500 mAdc Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous

1N914

Abstract: MMPQ2222A
Contextual Info: MMPQ2222A Preferred Device Quad General Purpose Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating 1 16 2 15 Symbol Value Unit 3 14 VCEO 40 Vdc 4 13 5 12 VCB 75 Vdc 6 11 7 10 8 9 Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage

C3 NPN

Abstract: ffb2222a
Contextual Info: FFB2222A / FMB2222A / MMPQ2222A FMB2222A FFB2222A E2 C2 B2 E1 C1 C1 SC70-6 Mark: .1P MMPQ2222A pin #1 E1 B1 E1 C2 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the

Contextual Info: H E M iQ Q N P U S T O R PN2222A C< B' MMBT2222A PZT2222A TO-92 SOT-23 B SOT-223 Mark: 1P MMPQ2222 NMT2222 Mark: .1B SOIC-16 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Pro­

MMPQ2222A

Abstract: MMPQ2222
Contextual Info: MMPQ2222 MMPQ2222A 500 mAMPERE TECHNICAL DATA 30-40 VOLTS 0.52-8.0 WATTS NPN GENERAL PURPOSE QUAD TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCB VEB IC

MMPQ2222

Abstract: MMPQ2222A SO16 footprint
Contextual Info: MOTOROLA Order this document by MMPQ2222/D SEMICONDUCTOR TECHNICAL DATA Quad General Purpose Transistors NPN Silicon 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 MMPQ2222 MMPQ2222A* *Motorola Preferred Device 16 MAXIMUM RATINGS 1 Rating Symbol MMPQ2222 MMPQ2222A

Contextual Info: MMPQ2222,A* CASE 751B-05, STYLE 4 SO-16 MAXIMUM RATINGS Symbol Rating MMPQ2222 MMPQ2222A v CEO Collector-Base Voltage VCB 60 Emitter-Base Voltage veb 5.0 Vdc 'C 500 mAdc Collector Current — Continuous 40 Vdc 75 Vdc Each Transistor Four Transistors Equal Power

ic 2429

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad General Purpose Transistors NPN Silicon eJ 1 1 V I Œ □ MMPQ2222 M M PQ 22224 a □ ‘Motorola Preferred Device i E m 5J V = a ü M J V I s MAXIMUM RATINGS Symbol MMPQ2222 MMPQ2222A Unit VCEO 30 40 Vdc Collector-Base Voltage

Contextual Info: MMPQ2222A Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)40 V(BR)CBO (V) I(C) Max. (A)500m P(D) Max. (W)1.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

FAIRCHILD SOT-223 MARK

Contextual Info: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E B E B E B SOIC-16 E NMT2222 B C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.

Contextual Info: E2 MMPQ2222A C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .1P B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.

PN2222A

Abstract: PN2222 MMPQ2222 MMBT2222A NMT2222 PZT2222A SOIC-16
Contextual Info: PN2222A MMBT2222A PZT2222A C C E E C C TO-92 BE SOT-23 B B SOT-223 Mark: 1P MMPQ2222 E B E B E B SOIC-16 E NMT2222 B C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch

1N914

Abstract: MMPQ2222A
Contextual Info: MMPQ2222A Preferred Device Quad General Purpose Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating 1 16 15 Symbol Value Unit 2 3 14 VCEO 40 Vdc 4 13 5 12 VCB 75 Vdc 6 11 7 10 8 9 Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage

IC 7403

Abstract: PN2222A npn general purpose amplifier MMBT2222A MMPQ2222 NMT2222 PZT2222A SOIC-16 IC VS 1307 national PN2222A
Contextual Info: PN2222A MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E B E B E B SOIC-16 E NMT2222 B C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: 100 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced

diode

Abstract: diode array mmad1103 6700M SO-14 MMAD130 MMAD1105 MMAD1106 MMAD1107 MMAD1108
Contextual Info: SO -14, SO-16 Devices Maximum die size 75 mil x 115 mil C A S E 75 1B-05 Quad Transistors f j@ lc hpE @ lc Device MMPQ2222A MMPQ2369 MMPQ2907A MMP03467 MMPQ3725 MMPQ3799 MMPQ3904 MMPQ3906 M M PQ 6700M V BR CEO V(BR)CBO Min mA MHz Min mA 40 15 50 40 40 60 40

MMPQ2222A

Contextual Info: MMPQ2222A Preferred Device Quad General Purpose Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector–Emitter Voltage Symbol Value Unit VCEO 40 Vdc VCB 75 Vdc VEB 5.0 Vdc 500 mAdc Collector–Base Voltage Emitter–Base Voltage Collector Current – Continuous

FFB2222A

Abstract: FMB2222A MMPQ2222A SC70-6 SOIC-16
Contextual Info: E2 MMPQ2222A C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .1P B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device.

Contextual Info: MMPQ2222 Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)30 V(BR)CBO (V) I(C) Max. (A)500m P(D) Max. (W)1.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

FFB2222A

Abstract: FMB2222A MMPQ2222A SC70-6 SOIC-16 C150F
Contextual Info: FMB2222A FFB2222A E2 MMPQ2222A C2 B2 E1 C1 C1 E1 C2 B1 B2 E3 E4 B4 B2 B1 pin #1 E2 B3 E2 E1 pin #1 B1 SC70-6 SuperSOT-6 Mark: .1P Mark: .1P C1 SOIC-16 C2 C1 C3 C2 C4 C4 C3 NPN Multi-Chip General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector

Contextual Info: MMPQ2222A Preferred Device Quad General Purpose Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit VCEO 40 Vdc VCB 75 Vdc Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage VEB Collector Current – Continuous

MMPQ2222A

Abstract: SOIC-16
Contextual Info: MMPQ2222A SURFACE MOUNT NPN SILICON QUAD TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR MMPQ2222A, consisting of four transistors and available in the SOIC-16 surface mount package, is designed for general purpose amplifier and switching applications.