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    C10V Search Results

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    C10V Price and Stock

    Nexperia BZX8450-C10VL

    BZX8450-C10/SOT23/TO-236AB
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    DigiKey BZX8450-C10VL Reel 10,000 10,000
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    EBV Elektronik BZX8450-C10VL 54 Weeks 10,000
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    ROHM Semiconductor BZX84C10VLYT116

    250MW, 10V, SOT-23, ZENER DIODE
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    DigiKey BZX84C10VLYT116 Digi-Reel 7,262 1
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    BZX84C10VLYT116 Cut Tape 7,262 1
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    BZX84C10VLYT116 Reel 3,000 3,000
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    Avnet Americas BZX84C10VLYT116 Ammo Pack 5
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    BZX84C10VLYT116 Reel 3,000
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    Mouser Electronics BZX84C10VLYT116 7,397
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    Newark BZX84C10VLYT116 Cut Tape 1,875 1
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    TME BZX84C10VLYT116 1
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    Avnet Silica BZX84C10VLYT116 29 Weeks 3,000
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    Chip1Stop BZX84C10VLYT116 Cut Tape 529
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    CoreStaff Co Ltd BZX84C10VLYT116 2,000
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    ROHM Semiconductor BZX84C10VLFHT116

    DIODE ZENER 10V 250MW SSD3
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    DigiKey BZX84C10VLFHT116 Reel 3,000 3,000
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    Avnet Americas BZX84C10VLFHT116 Reel 17 Weeks 3,000
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    BZX84C10VLFHT116 Ammo Pack 5
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    Newark BZX84C10VLFHT116 Cut Tape 6,727 1
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    Avnet Silica BZX84C10VLFHT116 15 Weeks 3,000
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    ROHM Semiconductor BZX84C10VLYFHT116

    250MW, 10V, SOT-23, AUTOMOTIVE Z
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    DigiKey BZX84C10VLYFHT116 Cut Tape 645 1
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    BZX84C10VLYFHT116 Digi-Reel 645 1
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    Avnet Americas BZX84C10VLYFHT116 Reel 3,000
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    Mouser Electronics BZX84C10VLYFHT116 2,791
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    Newark BZX84C10VLYFHT116 Cut Tape 1,946 5
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    Avnet Asia BZX84C10VLYFHT116 24 Weeks 3,000
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    Avnet Silica BZX84C10VLYFHT116 29 Weeks 3,000
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    Chip1Stop BZX84C10VLYFHT116 Cut Tape 1,050
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    CoreStaff Co Ltd BZX84C10VLYFHT116 2,980
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    Amphenol Piher SMC10V10-104A2020MTA

    POT 100K OHM 1/3W CERMET LINEAR
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    DigiKey SMC10V10-104A2020MTA Bulk 395 1
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    Find more C10V price and stock on Findchips.com

    C10V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1SV279 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV279 VCO for V/UHF Band Radio Unit: mm • High capacitance ratio: C2V / C10V = 2.5 typ. • Low series resistance: rs = 0.2 Ω (typ.) • Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SV279

    C10V

    Abstract: JDV2S41FS 1A15
    Text: JDV2S41FS 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 JDV2S41FS ○ V/UHF 帯無線 VCO 用 単位: mm • 直列抵抗が小さい : rs = 0.2 Ω 標準 • 容量比が大きい。 : C2V/C10V = 2.5 (標準) • 2 端子超小型外囲器なので､セットの小型化に適しています。


    Original     		PDF JDV2S41FS C2V/C10V 470MHz C10V JDV2S41FS 1A15

    Untitled

    Abstract: No abstract text available
    Text: JDV2S41FS TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type JDV2S41FS VCO for V/UHF Band Radio • Unit: mm Low series resistance: rs = 0.2 Ω typ. High capacitance ratio: C2V / C10V = 2.5 (typ.) Useful for small size tuner. 0.6±0.05 A 0.1


    Original     		PDF JDV2S41FS

    zener diode C5V

    Abstract: Zener c9v 3.1v to 350v ZENER DIODE LTC6802-1 c5v zener diode zener c6v fet n-channel pin configuration ADC ic 0808 pin diagram ADC IC 0808 ic 0808 pin diagram
    Text: Electrical Specifications Subject to Change LTC6802-1 Multicell Battery Stack Monitor FEATURES DESCRIPTION n The LTC 6802-1 is a complete battery monitoring IC that includes a 12-bit ADC, a precision voltage reference, a high voltage input multiplexer and a serial interface. Each


    Original     		PDF LTC6802-1 12-bit LTC6802-1 LTC6802-2 LTC6802-1, 68021p zener diode C5V Zener c9v 3.1v to 350v ZENER DIODE c5v zener diode zener c6v fet n-channel pin configuration ADC ic 0808 pin diagram ADC IC 0808 ic 0808 pin diagram

    JDV2S40FS

    Abstract: C10V
    Text: JDV2S40FS TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type JDV2S40FS VCO for UHF Band Radio Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 15 V Junction temperature Tj 150 °C Tstg −55 to 150


    Original     		PDF JDV2S40FS JDV2S40FS C10V

    1SV279

    Abstract: C10V
    Text: 1SV279 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 1SV279 ○ UHF 帯無線 VCO 用 単位: mm • 直列抵抗が小さい。 • 2 端子超小型外囲器なので､セットの小型化に適しています。 : rs = 0.2 Ω 標準


    Original     		PDF 1SV279 C2V/C10V 1SV279 C10V

    C10V

    Abstract: SDV708D DIODE marking V8
    Text: SDV708D Semiconductor Variable Capacitance Diode Features • Suitable for UHF band VCO. • Low series resistance. Ordering Information Type No. Marking Package Code SDV708D V8 SOD-323 unit : 1.25±0.1 0.3~0.35 Outline Dimensions mm 2.5±0.1 1.7±0.1 1 2


    Original     		PDF SDV708D OD-323 KSD-C031-000 C2V/10V 470MHz C10V SDV708D DIODE marking V8

    Untitled

    Abstract: No abstract text available
    Text: MMVL535T1 Advance Information Voltage Variable Capacitance Diode for UHF Band Radio http://onsemi.com This device is designed for UHF tuning and general frequency control and tuning. This device is supplied in the SOD−323 plastic surface mount package for high volume, pick and place assembly


    Original     		PDF MMVL535T1 MMVL535T1/D

    LT6000

    Abstract: LTC6802-2 LTC6802-1
    Text: LTC6802-2 Multicell Addressable Battery Stack Monitor FEATURES n n n n n n n n n n n n n DESCRIPTION Measures Up to 12 Li-Ion Cells in Series 60V Max Stackable Architecture Enables Monitoring High Voltage Battery Stacks Individually Addressable with 4-Bit Address


    Original     		PDF LTC6802-2 44-Lead 500kbps LTC6802-1 LTC6802-2, 68022fa LT6000 LTC6802-2 LTC6802-1

    B0218

    Abstract: Transistor B1214
    Text: Multi-Cell Li-Ion Battery Manager ISL94212 Features The ISL94212 is a Multi-cell Li-ion battery manager IC that supervises up to 12 series connected cells. The part performs accurate monitoring, cell balancing and extensive system diagnostics functions. Three cell balancing modes are


    Original     		PDF ISL94212 ISL94212 12-cell ISL94212s 254mm. MS-026, FN7938 B0218 Transistor B1214

    C10V

    Abstract: KDV239
    Text: SEMICONDUCTOR TECHNICAL DATA KDV239 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF RADIO. L K A H F ᴌSmall Package. 1 E ᴌUltra Low Series Resistance : rS=0.44ή Typ. G B CATHODE MARK FEATURES 2 J D C I MAXIMUM RATING (Ta=25ᴱ)


    Original     		PDF KDV239 100MHz C10V KDV239

    C10V

    Abstract: KDV153 nc marking
    Text: SEMICONDUCTOR KDV153 TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO. E B 2 RATING UNIT Reverse Voltage VR 20 V Junction Temperature Tj 150 B C 1.30+0.20/-0.15 1.30 MAX 3 1 P P D 0.45+0.15/-0.05


    Original     		PDF KDV153 C2V/C10V 470MHz C10V KDV153 nc marking

    KDV212E

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KDV212E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV TUNING. FEATURES Excellent C-V Characteristics, and Small Tracking Error. 1 A High Capacitance Ratio E C B CATHODE MARK Low Tuning Voltage 2 D MAXIMUM RATING Ta=25


    Original     		PDF KDV212E C1V/C10V 470MHz KDV212E

    LTC6804IG-1

    Abstract: No abstract text available
    Text: LTC6804-1/LTC6804-2 Multicell Battery Monitors Features Description Measures Up to 12 Battery Cells in Series n Stackable Architecture Supports 100s of Cells n Built-In isoSPI Interface: 1Mbps Isolated Serial Communications Uses a Single Twisted Pair, Up to 100 Meters


    Original     		PDF LTC6804-1/LTC6804-2 16-Bit ISO26262 LTC6804 LTC3300 LiFeP04 48-Lead 680412fa com/LTC6804-1 LTC6804IG-1

    C10V

    Abstract: KDV154
    Text: SEMICONDUCTOR KDV154 TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO. SYMBOL RATING UNIT Reverse Voltage VR 20 V Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range L A H F


    Original     		PDF KDV154 C2V/20V 470MHz C10V KDV154

    ad1242

    Abstract: No abstract text available
    Text: 1SV229 SILICON EPITAXIAL PLANAR TYPE VCO FOR UHF BAND RADIO Unit in m m . Ultra Low Series Resistance : rs= 0 .2n Typ. . Useful for Small Size Set MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage Vr 15 V Junction Temperature Tj


    OCR Scan     		PDF 1SV229 C2V/C10V 70MI1z ad1242

    AFC marking

    Abstract: marking T4
    Text: 1SV216 SILICON EPITAXIAL PLANAR TYPE TV VHF UHF TUNER AFC Unit in mm MAXIMUM RATINGS Ta=25”C CHARACTERISTIC Reverse Voltage SYMBOL RATING 30 VR Peak Reverse Voltage VRM Junction Temperature Tj Storage Temperature Range T stg UNIT V 35 (RL=10kn) V 125 °C


    OCR Scan     		PDF 1SV216 C2V/C10V 470MHz AFC marking marking T4

    MV2112

    Abstract: No abstract text available
    Text: K n o x S e m ic o n d u c t o r , I n c . GENERAL PURPOSE ABRUPT VARACTOR DIODES MV2101 - MV2115 MV2201 - MV2215 TYPE NUMBER MV2101 MV2102 MV2103 MV2104 MV2105 MV2106 MV2107 MV2108 MV2109 MV2110 MV2111 MV2112 MV2113 MV2114 MV2115 MV2201 MV2203 MV2205 MV2207


    OCR Scan     		PDF MV2101 MV2115 MV2201 MV2215 MV2101 MV2102 MV2103 MV2104 MV2105 MV2106 MV2112

    Untitled

    Abstract: No abstract text available
    Text: 1SV239 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV2 3 9 Unit in mm VCO FOR UHF RADIO Ultra Low Series Resistance : rs = 0.440 Typ. Useful for Small Size Set 0 ± 0 .0 5 1 0.15 + 0.2 0.9 - 0.1 0.06 10.15 +- 0.1 m i -T- MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SV239

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SV279 1 SV2 7 9 TOSHIBA VARIABLE CAPACITANCE DIODE VCO FOR V /U H F BAND RADIO SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C2 V /C 10 V —2.5 TYP. • Low Series Resistance : rs = 0.20 (TYP.) • Useful for Small Size Tuner.


    OCR Scan     		PDF 1SV279 0014g 470MHz

    1SV239

    Abstract: C10V
    Text: 1SV239 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 239 VCO FOR UHF RADIO • • Ultra Low Series Resistance : rs = 0.440 Typ. Useful for Small Size Set MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Temperature


    OCR Scan     		PDF 1SV239 1SV239 C10V

    UJT-2N2646 PIN DIAGRAM DETAILS

    Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
    Text: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect


    OCR Scan     		PDF Semi260 TY510 TY6004 TY6008 TY6010 TY8008 TY8010 2N6394 MCR218-8 UJT-2N2646 PIN DIAGRAM DETAILS speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402

    DIODE IR1J

    Abstract: ir1j
    Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KDV153 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT 20 V Vr 150 °c Tj -55 —150 °c Tstg CHARACTERISTIC


    OCR Scan     		PDF kdv153 OT-23 C2V/C10V 470MHz DIODE IR1J ir1j

    KS88C8016

    Abstract: TAD 7265 data
    Text: Electronics ô ~ B it C M O S M i c r o c o n t r o 1 1er Product Specification OVERVIEW The KS88C8016 single-chip 8-bit microcontroller is fabricated using a highly advanced CMOS process. Its fast and reliable CPU is based on Zilog's Super8 architecture. Important features include two 8-bit timer/ counters,


    OCR Scan     		PDF KS88C8016 16-bit 20-bit 336-byte 16-Kbyte TAD 7265 data