C1812X7R Search Results

Contextual Info: DATASHEET C1812X7R250-224JNE GENERAL PURPOSE CERAMIC CAPACITORS C SERIES 1812, X7R, 25V, 0.22uF, ±5%, 100% matte Tin(Sn) over Nickel REEL DIMENSIONS units: mm SIZE SPECIFICATIONS units: inches Length: 0.177 Width: 0.126 T(max): 0.085 Min E/B: .024 ± .015

C1812X7R

Contextual Info: DATASHEET C1812X7R101-334KNE GENERAL PURPOSE CERAMIC CAPACITORS C SERIES 1812, X7R, 100V, 0.33uF, ±10%, 100% matte Tin(Sn) over Nickel REEL DIMENSIONS units: mm SIZE SPECIFICATIONS units: inches Length: 0.177 Width: 0.126 T(max): 0.085 Min E/B: .024 ± .015

McMaster-Carr

Abstract: m174 92196a ATC200B marking h5 92196A1 91252 5050-0037
Contextual Info: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz

Abstract: MARCON NH capacitor marcon capacitor nc inductor vk200 Variable resistor 10K ohm resistor 4.7k ohm neosid* 10k RG316 coaxial cable rs-2b resistor 8 pin SURFACE MOUNT RESISTOR
Contextual Info: SD2932  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs PRELIMINARY DATA ν ν ν ν GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 300W MIN. WITH 15 dB GAIN @175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS

IRLR2905 SMD

Abstract: IRLR2905PBF 4x4 ecu 100ME100AX CR0805-8W-1000FT C0805X7R500103JNE CR0805-8W-1002FT C1206COG101 100ME100AX T MUR5120T3
Contextual Info: Using the ISL6401 RSLIC PWM Controller Evaluation Board Application Note January 30, 2009 AN1082.2 Author: Manisha Pandya, Jason Houston Functional Description The ISL6401 pulse width modulating PWM current mode controller is designed for a wide range of DC/DC conversion

VLSI TECHNOLOGY

Abstract: TL431 SOT-23 agilent optical encoder HFBR-25X6 TL431 5v 2n3904 philips 3904 TRANSISTOR Antenna design magnetic loop antennas C0805COG500 diode u1d ON
Contextual Info: Fiber-Optic Solutions for 125 MBd Data Communication Applications at Copper Wire Prices Application Note 1066 Introduction Fiber-optic cables have historically been used when the distance is too long, or the data rate is too high, for the limited bandwidth of wire. Optical communication links are also favored when

MC10H116 equivalent

Abstract: prbs generator using ic chips mc10h116 BFT92 ML4622 Signetics TL431 single mode step index plastic fiber SIGNETICS fiber optic schematic symbols BFQ52
Contextual Info: H Fiber-Optic Solutions for 125 MBd Data Communication Applications at Copper Wire Prices Application Note 1066 designers must exercise caution to ensure that conductive cables Fiber-optic cables have historido not exceed radiated noise limcally been used when the distance is too long, or the data rate its established by the FCC, and

Contextual Info: SD2918 RF power transistor HF/VHF/UHF n-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 30 W min. with 18 dB gain @ 30 MHz Description M113 Epoxy sealed The SD2918 is a n-channel MOS field-effect RF

Contextual Info: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

ATC100B620

Abstract: LET9120 27291PC ATC100B101
Contextual Info: LET9120 RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 120 W with 18 dB gain @ 860 MHz ■ BeO-free package

McMaster-Carr

Abstract: SD3933 12AWG 700B M177 MCMASTER 92196A146 ATC200B103MW50X 92196A1 92196A108
Contextual Info: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive

5W 6.8 ohm k ceramic resistor

Abstract: 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor FAIR-RITE 2743021447 UT141-25 GRM43-4X7R-104K500 diode L2.70 C22-C23 GRM43-4X7r
Contextual Info: SD2922 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is

MLF3216

Abstract: MLCC R040 NTC thermistor 5k ohm FBM0805 MLF1005 330m 400v MLF1206 c1206x7r160 thr mgp 10k CR0402-16w
Contextual Info: Our Mission Venkel’s mission is to be a leading supplier of surface mount components by utilizing a team of highly motivated people dedicated to exceeding customer expectations through superior quality, price, service and innovation with integrity. 5900 Shepherd Mountain Cove • Austin, TX 78730

mallory date code

Abstract: McMaster-Carr 92196A146 1200 uF 63V capacitor SD3933 arco capacitors capacitor ceramic variable RF MALLORY CAPACITOR date code Mallory Capacitor M177
Contextual Info: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary Data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European

9966

Abstract: SHT31 12AWG 700B M177 SD3933 91252 ATC700B122 McMaster-Carr a/IC+oz+9966
Contextual Info: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

MARCON NH capacitor

Abstract: UT141-25 neosid* 10k UT-141-25 4.7kohm trimmer RG316-25 mount chip transistor 13W diode L2.70 ferrite core shield transformer pin connection vk200 ferrite bead
Contextual Info: SD2922 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is

signetics 556

Abstract: mc10h116 prbs generator using ic chips ber
Contextual Info: Fiber-Optic Solutions for 125 MBd Data Communication Applications at Copper Wire Prices Application Note 1066 designers must exercise caution to ensure that conductive cables Fiber-optic cables have historido not exceed radiated noise limcally been used when the distance is too long, or the data rate its established by the FCC, and

5W 6.8 ohm k ceramic resistor

Abstract: 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor GC812 neosid* 10k mount chip transistor 13W SME63T10RM variable RESISTANCE 1 M OHM resistor 560 ohm
Contextual Info: SD2922  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is

HFBR-25X6Z

Abstract: BFT92 HFBR25X6Z 2N3904 BFQ52 HFBR-1527 HFBR-15X7Z HFBR-2526 MC10H116FN single mode step index plastic fiber
Contextual Info: Fiber-Optic Solutions for 125 MBd Data Communication Applications at Copper Wire Prices Application Note 1066 Introduction Fundamental Advantages Of Optical Communication Fiber-optic cables have historically been used when the distance is too long, or the data rate is too high, for the

C1812X7R501-103KNE

Abstract: ATC200B103KW50X ELNA America Elna axial ELNA RVS 2643801002 elna 50v sd2918 M113 RVS-50V100M-R
Contextual Info: SD2918 RF power transistor HF/VHF/UHF n-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 30 W min. with 18 dB gain @ 30 MHz Description M113 Epoxy sealed The SD2918 is a n-channel MOS field-effect RF

92196A146

Abstract: SD3933 rf transistor mark code H1 12AWG 700B M177 toroid 6009 McMaster-Carr
Contextual Info: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

mallory date code

Abstract: McMaster-Carr 12AWG 700B M177 SD3933 st code vishay label
Contextual Info: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary Data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european

Contextual Info: SD2902 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . . . . GOLD METALLIZATION 2 - 5 0 0 MHz 15 WATTS 28 VOLTS 12.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION The SD2902 is a gold metallized N-Channel MOS