C1825 Search Results

Contextual Info: KEMET Part Number: C1825C394K2RAC Capacitor, ceramic, 0.39 uF, +/-10% Tol, 200V, X7R, 1825 General Information Manufacturer: Miscellaneous Electrical: KEMET Note: Referee time for X7R dielectric for this part number is 1000 hours Electrical Specifications

Contextual Info: C1825C105KARACTU aka C1825C105KARAC7800 Capacitor, ceramic, 1 uF, 10% Tol, 250V, X7R, 1825 Dimensions mm Specifications ID Dimension Tolerance L W T B 4.50 6.40 1.5mm 0.60 +/-0.30 +/-0.40 0.15 +/-0.35 Powered by IntelliData.net Application: Capacitance:

CKS55

Abstract: GR900 MIL-PRF-123 M123A03BXB105KC C0805A152 C512Z M123A02BXB105KC CERAMIC CHIP/MIL-PRF-123
Contextual Info: F-3113 5/06 CERAMIC HIGH RELIABILITY CAPACITORS Ceramic High Reliability Capacitors KEMET Series MIL-PRF-123 Performance Information MIL-PRF-123/01/02/03 C0805Z/C1206/C1210Z/ C1808Z/C1812Z/C1825Z/C2225Z GR900 Performance Information 4-7 4, 8-11 12 GR900 High Reliability Radial

Contextual Info: KEMET Part Number: CDR35BP133AFUR C1825N133F5GRL[U], C1825N133F5GRL[U]-MILITARYBULK Capacitor, ceramic, 0.013 uF, +/-1% Tol, 50V, C0G, 1825 General Information Manufacturer: Marking: KEMET Mkd Electrical Specifications Capacitance: Chip Size: Voltage: Symbol

Contextual Info: KEMET Part Number: C1825Z153F5GAH C1825Z153F5GAH, M123A23BPB153FS-MILITARYBULK Capacitor, ceramic, 0.015 uF, +/-1% Tol, 50V, C0G, 1825 General Information Manufacturer: Marking: KEMET Mkd Electrical Specifications Capacitance: Chip Size: Voltage: Symbol

Contextual Info: C1825C683K2RAC Capacitor, ceramic, 0.068 uF, +/-10% Tol, 200V, X7R, 1825 Dimensions mm Specifications ID Dimension Tolerance L W T B 4.50 6.40 1.1 0.60 +/-0.30 +/-0.40 +/-0.15 +/-0.35 2006-2012 IntelliData.net Manufacturer: Capacitance: Chip Size: Voltage:

Contextual Info: KEMET Part Number: C1825C105K5RACTU C1825C105K5RAC7800 Capacitor, ceramic, 1 uF, +/-10% Tol, 50V, X7R, 1825 General Information Manufacturer: Miscellaneous Electrical: KEMET Note: Referee time for X7R dielectric for this part number is 1000 hours Electrical Specifications

CDR31-CDR35

Abstract: CDR02 CDR03 CDR31 CDR32 CDR33 1g4l 1g marking CERAMIC CHIP/MIL-PRF-55681
Contextual Info: CERAMIC CHIP/MIL-PRF-55681 CAPACITOR OUTLINE DRAWINGS BW DIMENSIONS—MILLIMETERS AND INCHES STYLE KEMET SIZE CODE CDR01 CDR02 CDR03 CDR04 C0805 C1805 C1808 C1812 CDR05 C1825 CDR06 CDR31 CDR32 CDR33 CDR34 CDR35 C2225 C0805 C1206 C1210 C1812 C1825 T L W MIN.

Contextual Info: KEMET Part Number: C1825C122KGGACTM C1825C122KGGAC7025 Capacitor, ceramic, 1200 pF, +/-10% Tol, 2000V, C0G, 1825 General Information Manufacturer: KEMET Electrical Specifications Capacitance: Chip Size: Voltage: Temperature Coefficient: Tolerance: Application:

Contextual Info: KEMET Part Number: C1825C474J5RACTU C1825C474J5RAC7800 Capacitor, ceramic, 0.47 uF, +/-5% Tol, 50V, X7R, 1825 General Information Manufacturer: Miscellaneous Electrical: KEMET Note: Referee time for X7R dielectric for this part number is 1000 hours Electrical Specifications

LT3973-3.3

Abstract: C0805P C1825N EIA-198 method 103 C1206 KEMET kemet capacitor C0805 fpe0001 Kemet Flex Solutions kemet capacitor c1812 CERAMIC CHIP/MIL-PRF-55681
Contextual Info: F-3113 5/06 CERAMIC SURFACE MOUNT CAPACITORS Ceramic Surface Mount Capacitors KEMET Series Performance Information Page 1-5 MIL-PRF-55681/01/02/03/ 04/05/06 C0805P/C1805P/C1808P C1812P/C1825P/C2225P 6-7 MIL-PRF-55681/31/32/ 33/34/35 C0805N/C1206N/ C1210N/C1812N/C1825N

Contextual Info: KEMET Part Number: C1825H562JDGACTU C1825H562JDGAC7800 Capacitor, Ceramic, SMD, MLCC, High Temp, Ultra-Stable, Low Loss, 5600 pF, +/-5% Tol, 1000V, C0G, 1825 General Information Supplier: Part Type Description: KEMET SMD, MLCC, High Temp, UltraStable, Low Loss

102. 1kv

Abstract: CL31 samsung capacitor A-TC02 HEC capacitor ceramic C0805 102 1kv CL21 105 j 107 10V epcos C0805X474K050T CL21B474 MLCC X8R murata
Contextual Info: HOLYSTONE ENTERPRISE INC Surface mount MLCC Capacitor X-Reference Guide Chip Case Size/Style Cross Reference Chart HEC C0201 C0402 C0603 C0805 C1206 C1210 C1808 C1812 C1825 C2220 C2225 ATC ATC0201 ATC 0402 ATC 0603 ATC 0805 ATC 1206 ATC 1210 ATC 1808 ATC 1812 ATC 1825 ATC 2220 ATC 2225

LT3973-3.3

Abstract: CDR01-CDR06 C1206 KEMET packaging PEF55801VV1.3 CDR05BX823BKW CDR31-CDR35 MIL-PRF-55681 kemet 31G-4 CDR02 LT1432-3.3
Contextual Info: CERAMIC CHIP/MIL-PRF-55681 KEMET CAPACITOR OUTLINE DRAWINGS CHIP DIMENSIONS “SOLDERGUARD I” * SOLDER L W “SOLDERGUARD II” T TINNED BW NICKEL ELECTRODES SILVER METALLIZATION NICKEL ELECTRODES Military Designation - “S” or “U” KEMET Designation - “H”

Contextual Info: Freescale Semiconductor Technical Data MRF6S9130H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 0, 2/2007 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2150NR1 MRF6V2150NBR1 Designed primarily for CW large - signal output and driver applications with

IrL 1540 N

Abstract: A114 A115 AN1955 C101 JESD22 MRF8S18120HR3 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR

1500 C FK 84 EH

Abstract: C0402 C0805 C0805C103K5RAC C1206 C1210 C1812 C1825 EIA481-1 IEC60286-6
Contextual Info: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

C0805

Abstract: C0805C103K5RAC C1206 C1210 C1812 C1825 EIA481-1 IEC60286-6
Contextual Info: KEMET CERAMIC CHIP/STANDARD FEATURES • C0G NP0 , X7R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and

G2225X7R225KT3AB

Abstract: MRF6VP2600KH TUI-lf-9 UT-141C-25 DVB-T Schematic tuo-4 MRF6VP2600H AN1955 ATC100B470JT500XT MRF6VP2600HR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP2600H Rev. 5, 5/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed primarily for wideband applications with frequencies up to 500 MHz. Device is unmatched and is suitable for use in broadcast applications.

mosfet j172

Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base

th 2190

Abstract: MRF6S21050LR3 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101
Contextual Info: MRF6S21050L Rev. 0, 3/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

MCR50V107M8X11

Abstract: 81c79 A114 A115 AN1955 C101 JESD22 MRF7S19080HR3 MRF7S19080HSR3 CRCW120610R0FKTA
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 0, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to