C3225X7R2A225KT Search Results

Contextual Info: C3225X7R2A225K230AB TDK Item Description : C3225X7R2A225KT* DC Bias Characteristic 10 Application & Main Feature Cap. Change/% Commercial Grade Mid Voltage (100 to 630V ) Series C3225 [EIA CC1210] -10 -20 -30 -40 -50 -60 -70 -80 -90 20 40 60 80 100 120

Contextual Info: MIC28510 75V/4A Hyper Speed Control Synchronous DC/DC Buck Regulator SuperSwitcher II™ General Description Features The Micrel MIC28510 is an adjustable-frequency, synchronous buck regulator featuring unique adaptive ontime control architecture. The MIC28510 operates over an

CKD310

Abstract: CGA3E C3216X7R2E473KT CKD310JB0J226S CC01005 AEC-Q200 C1005 C1608 C3216 CC0201
Contextual Info: TDK MLCC US Catalog Version A10 This page is intentionally left blank. ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ ¾ General Application, C Series Mid Voltage Application, C Series High Voltage Application, C Series High Temperature Application, C Series Tight Tolerance Capacitor, C Series

IrL 1540 N

Abstract: A114 A115 AN1955 C101 JESD22 MRF8S18120HR3 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for

C3225X7R2A225KT5LOU

Contextual Info: user Guide | UG:014 VI Chip VTM® Evaluation Board Written by: Ankur Patel Applications Engineer August 2013 Contents Page Introduction Introduction 1 This evaluation board offers a convenient means to evaluate the performance of Vicor’s VTM® current multiplier. All evaluation boards include sockets for easy "plug

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 1, 12/2011 RF Power LDMOS Transistors MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with

MRF8P20140WH/HS

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth

C3225X7R2A225KT

Abstract: 8-30VDC 74C125 UT-141C-25 rf Amplifier mhz Doherty 470-860 Rogers RO4350B microstrip ATC100B240JT500X capacitor 104 Z30 470-860 mhz Power amplifier w ATC-100B-3R0
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices

AVX C1608X7R2A102K

Abstract: CRCW080510K0JNEA C3225X7R2A225KT5 CRCW060349R9FKEA 24VIN Ceramic Capacitor 47uf 100V 1210 x7r GRM32ER61C476ME15 MIC28510 MCC SMD DIODE c1608x7r2a472k
Contextual Info: MIC28510 Evaluation Board 75V/4A Hyper Speed Control Synchronous DC/DC Buck Regulator General Description Getting Started The MIC28510 DC/DC regulator operates over an input supply range of 4.5V to 75V and provides a regulated output at up to 4A of output current. The

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 1, 11/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base

c2012 TDK

Abstract: C3225X7R2A225KT5 C3216X7R2E104KT CC2220 C2012X7R1H104KT MLCC CRACK 250v 104 K capacitor C5750X7R1E156MT5 C3216X7R2J103KT 250v 1.0 K capacitor
Contextual Info: C Series Open Mode Design Type: C2012 [EIA CC0805] C3216 [EIA CC1206] C3225 [EIA CC1210] C4532 [EIA CC1812] C5750 [EIA CC2220] Issue date: January 2011 TDK MLCC US Catalog Version A11 REMINDERS Please read before using this product SAFETY REMINDERS REMINDERS

LDMOS DVB-T transistors

Abstract: 470-860 CRCW120610RJ RF high POWER TRANSISTOR
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6V3090N Rev. 1, 12/2011 RF Power LDMOS Transistors MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5 Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP8600H Rev. 1, 9/2011 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Optimized for broadband operation from 470 to 860 MHz. Device has an integrated input matching network for better power distribution. These devices

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all

ATC600F100JT250XT

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from

transistor j307

Abstract: j352 sk063
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18H357-24S Rev. 0, 3/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to

AVQ100

Contextual Info: 48Vdc Input,12Vdc@8.3A Output Quarter-Brick Converter AGQ100-48S12B Description The AGQ100-48S12B is a single output DC-DC converter with standard quarter-brick outline and pin configuration. It delivers up to 8.3A output current with 12.0V output voltage.

DVB-T Schematic

Abstract: LDMOS DVB-T transistors DVB-T acpr MRF6VP3091N mrf6v3090n
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 0, 9/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast

MRF8P20140WHS

Abstract: mrf8p20140 J473 MRF8P20140W
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6VP3091N Rev. 1, 12/2011 RF Power LDMOS Transistors Enhancement-Mode Lateral MOSFETs Designed for commercial and industrial broadband applications with frequencies from 470 to 860 MHz. Devices are suitable for use in broadcast

transistor t 2180

Contextual Info: MIC28500 75V/4A Hyper Speed Control Synchronous DC-DC Buck Regulator SuperSwitcher II™ General Description Features The Micrel MIC28500 is an adjustable frequency, synchronous buck regulator featuring a unique adaptive ontime control architecture. The MIC28500 operates over an

j377

Abstract: MRF8S26120H MRF8S26120HS MRF8S26120HSR3 MRF8S26120 CRCW120610K0FKEA MRF8S26120HR3 j382 ATC800B HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S26120H Rev. 0, 6/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S26120HR3 MRF8S26120HSR3 Designed for W-CDMA and LTE base station applications with frequencies

IrL 1540 N

Abstract: IrL 1540 g AN1955 MRF8S18120HR3 MRF8S18120HSR3 J-041 GPS 112 860F MRF8S18120H
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 1, 10/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all