C2 DIODE Search Results

Contextual Info: APTGF180DU60TG Dual common source NPT IGBT Power Module VCES = 600V IC = 180A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 C1 Q1 Q2 G1 G2 E1 E2 E NT C1 NT C2 G2 C2 E2 C1 C2 E E1 E2 NTC2 G1

Contextual Info: APTGF50DU120TG Dual common source NPT IGBT Power Module VCES = 1200V IC = 50A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 C1 Q1 Q2 G1 G2 E1 E2 E NT C1 NT C2 G2 E2 C1 E C2 C2 E1 E2 NTC2 G1

car battery charger

Abstract: NTHD4N02 NTHD4P02 NTLJF3117P NTLJF3118N NTLJF4156N NTMSD3P102 NTMSD3P303 NTMSD6N303 mosfet with schottky body diode
Contextual Info: L1 Vin Vout C1 D1 Q1 ON/OFF C2 FETKY GND GND L1 Vin Vout FETKY C1 Typical Uses for FETKY Devices Vin ON/OFF GND C1 ON/OFF Q1 D1 C2 Vout Q1 C2 GND R1 Protection Circuit GND GND FETKY The Schottky diode actually provides a by-pass channel and keeps D1 reverse

A3100W

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1

W001

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 400 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1

POWERSEM

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 600 R 16 KF4 55,2 11,85 M8 screwing depth max. 8 130 31,5 114 E1 C2 C1 E2 E2 E1 C1 G1 M4 28 screwing depth max. 8 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1

Pin diode G4S

Abstract: BAR63-04W BAR63-05W BAR63 BAR63-06W VSO05561 diode C2 marking c2 diode diode MARKING A1 marking G5s
Contextual Info: BAR63.W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR63-04W BAR63-05W C1/A2 3 BAR63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1 C2 EHA07181

PMBT222A

Abstract: secme Switch IC1 4094 secme france BZV55C3V6 TDA8768A 4700-003-S 1206 PHILIPS 330nF capacitor EFFECTIVE SECME
Contextual Info: APPLICATION NOTE - TDA8768A/C2 12-BIT HIGH-SPEED A/D CONVERTER DEMONSTRATION BOARD AN/01029 VERSION 2.1 Philips Semiconductors - TDA8768A/C2 - Application Note AN/01029 DEMONSTRATION BOARD APPLICATION NOTE - TDA8768A/C2 12-BIT HIGH-SPEED A/D CONVERTER DEMONSTRATION BOARD

PMBT222A

Abstract: secme Switch secme france Philips d 6402D MCLT1-6T-KK81 SECME QFP44 TDA8768A HF70ACB
Contextual Info: APPLICATION NOTE - TDA8768A/C2 12-BIT HIGH-SPEED A/D CONVERTER DEMONSTRATION BOARD AN/01007 VERSION 2.0 Philips Semiconductors - TDA8768A/C2 - Application Note AN/01007 DEMONSTRATION BOARD APPLICATION NOTE - TDA8768A/C2 12-BIT HIGH-SPEED A/D CONVERTER DEMONSTRATION BOARD

IC1500

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 7 28 2,5 deep C2 16 40 53 E1 G2 18 44 2,5 deep 57 C2 C2 E1 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values

FF 150 R 1200 kf igbt

Contextual Info: European PowerSemiconductor and Electronics Company Marketing Information FF 800 R 12 KF4 55,2 11,85 M8 130 114 31,5 C2 E1 C1 E2 E2 E1 C1 G1 M4 28 7 2,5 deep 40 53 E1 C2 16 18 G2 44 2,5 deep 57 C2 E1 C2 G1 G2 C1 E2 C1 E2 20.03.1998 FF 800 R 12 KF 4 Höchstzulässige Werte / Maximum rated values

HA1930A

Abstract: 1m9141 1NS471A 1M914
Contextual Info: CHIP DIODES UHF I VHF TUNING DIODES HIGH 0 FOR MANY UHF -VH F USES LOWEST LEAKAGE HIGH 0 TYPE NO RATIO Û4 0 C2/CM 50 M H; min/mi* C2/CJ0 min/m»* HYPERABRUPT HIGH Q ABRUPT GOOD Q4 50 mm RATIO TYPf NO R ATIO C2/C30 mm/m»* 1YPE #0 P A S S IV A T E D A F T E R TYPE

600v 100a

Abstract: APT0406 APTGT100DU120T
Contextual Info: APTGT100DU120T Dual common source Fast Trench + Field Stop IGBT Power Module C1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 Q1 VCES = 1200V IC = 100A @ Tc = 80°C Q2 G1 G2 E2 NTC2 G2 C2 E2 C1 C2 E E1

Contextual Info: APTGU120DU120T Dual common source PT IGBT Power Module VCES = 1200V IC = 120A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 Q2 G2 E1 E2 E NTC1 NTC2 G2 C2 E2 C1 C2 E E1 E2 NTC2 G1 G2 NTC1 Benefits

APT0406

Abstract: APTGT150DU60T
Contextual Info: APTGT150DU60T Dual common source Trench + Field Stop IGBT Power Module C1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 Q1 VCES = 600V IC = 150A @ Tc = 80°C Q2 G1 G2 E NTC1 NTC2 G2 C2 E2 C1 C2 E E1 E2

APT0406

Abstract: APTGT200DU60T
Contextual Info: APTGT200DU60T VCES = 600V IC = 200A @ Tc = 80°C Dual common source Trench + Field Stop IGBT Power Module C1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 Q1 Q2 G1 G2 E NTC1 NTC2 G2 C2 E2 C1 C2 E E1 E2

Contextual Info: APTGT100DU60TG Dual common source Trench + Field Stop IGBT Power Module VCES = 600V IC = 100A @ Tc = 80°C Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 C1 Q1 Q2 G1 G2 E1 E2 E NTC1 NTC2 G2 E2 C1 E C2 C2