C22SS Search Results

4063AB

Abstract: 4063YB cathode ray vacuum tube
Contextual Info: C22SS/IB 4063A B C22SS/2B (4063Y B) H ig h V a c u u m C a t h o d e R a y Tub e 4063AB (B lu e S c re e n ) 4063YB (B lu e S creen Y p la te s te rm in a te d th ro u g h sid e o f b u lb ) CATHODE. Indirectly-heated oxide-coated Voltage Nom inal h e a te r c u rre n t

transistor a effet de champ

Abstract: BF247 transistor 139 BF signaux
Contextual Info: BF247 F IE L D E FFEC T T R A N S IS T O R , S IL IC O N , N C H A N N E L TRANSISTOR A E FFE T DE CHAMP, SILICIUM, CANAL N -Amplification Amplification -Chopper Découpeur V DS 25 V max. ' dss 30 . . . 25 0 mA à V QS = 0 in 3 groups e n 3 groupes 2 3 m A /V ty p à V GS = 0

BC264

Abstract: transistor a effet de champ b c 264 transistor bc264 F-139 equivalent transistor BC 55 TRANSISTOR effet de champ BC 264 CB-76 50 transistor BC 1 BF 212 transistor
Contextual Info: BC 264 FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EF FE T OE CHAMP, SILICIUM, CANAL N - LF amplification Amplification BF V DS 30 V max. ' dss 2 . . . . 12 mA à V GS = 0 in 4 groups en 4 groupes F 2 dB max à V q § = 0 f » 1 kHz Plastic case F 139 B — See outline drawing CB-76 on last pages

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

KT368A

Abstract: KT382aM KT382A kt399a KT325B KT201A KT371A KT-316 KT368AM kt382
Contextual Info: TRANSISTORS Mfi Electron Device Mfg. Corp. M E A N -F R E Q U E N C Y T R A N S IS T O R S T ype p *m «x' mW It M Hz N o is e F a c to r R ated V a lu e s T em p e­ ra tu re R a n g e. ^CbOmax' •c V ^C E m ax' V U E B m tx » V ^C m ir mA KT201A KT201AM

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

transistor BF 245

Abstract: bf 245 BF245 transistor BF245 transistor BF 245 c transistor BF245 A BF245 canal n BF245 TRANSISTOR BF 245 C transistor Bf-245
Contextual Info: BF245 FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EFFE T DE CHAMP, SILICIUM , CANAL N - LF and HF amplification Vos 30 V max IDSS 2 . 25 mA .Vg s = 0 in 3 groups Amplification BF et H F en 3 groupes 1,1 pF typ. C12S Plastic case F 139 B — See outline drawing CB-76 on last pages

Contextual Info: F IE L D -E F F E C T T R A N S IS T O R , S IL IC O N . N C H A N N E L *2N4416A TR A N S IS T O R A E F F E T D E C H AM P, S IL IC IU M . C A N A L N Preferred device D isp o sitif recommandé - H F amplification A m p lific a tio n H F 30 V min 2N 4416

high power Triode for induction heating

Abstract: BRIMAR general electric valve data 4043 POWER TRIODE cold cathode thyratron 4228A BS448 cathode ray x ray filament transformer Vacuum Tube 300B
Contextual Info: Standard Valves Standard Telephones and Cables Limited V A L V E D IV IS IO N C O N N A U G H T HOUSE, A L D W Y C H , L O N D O N , W .C .2 Telephone : Holborn 8765 Telegrams “ Relay, Telex, London” PRICE Septem ber, 1947 15/- A_I Standard Telephones and Cables Limited