C30618 Search Results

Contextual Info: High Speed InGaAs PIN Photodiodes C30616, C30637, C30617, C30618 Series Overview Features and Benefits This series of high speed InGaAs photodiodes is designed for use in OEM fiber-optic communications systems and high-speed receiver applications including trunk line, LAN, fiber-in-the-loop

C30642E

Abstract: rca 514 C30618 C30619 C30641 C30642 T018 el 85
Contextual Info: E G & G/CANADA/OPTOELEK ^ V n l l fl i f J f 1 I ID ]> • E le c tr o O p tic s 'T ^ £/ / 'S 3 3D30bl0 OODDDTD DÔ6 ■ CANA Photodiodes C30618, C30619, C30641, C30642 ¥ -

C30617

Abstract: c3063 C30616 C30618 C30637 sled 1550
Contextual Info: Imaging Telecom InGaAs PIN Photodiodes High-Speed InGaAs PIN C30616, C30637, C30617, C30618 InGaAs PIN Photodiodes Description These high-speed InGaAs photodiodes are designed for use in O E M f i b e r- o p t i c c o m m u n i c a t i o n s systems and high-speed receiver

C30642E

Contextual Info: E G & G/CANADA/OPTOELEK 10 ]> • 3G3QblQ OOODGTG Dûô 'T ^ £/ / " 5 3 M CANA 0 * ÆW Electro Photodiodes ■ miff ■ O ptics C30618, C30619, C30641, C30642 ■ B DATA SHEET Large Area Planar PIN InGaAs Photodiodes ■ Large areas with uniform responsivity

C1383 NPN transistor collector base and emitter

Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
Contextual Info: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,

FND-100Q

Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Contextual Info: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.

C30617

Abstract: 617 connector D4 Package C30616 C30618 C30637
Contextual Info: Specifications at VR = VOP typical , 22°C Parameter Min Operating Voltage Breakdown Voltage Active Diameter Responsivity at 1300 nm Ceramic (D1)/TO-18 (D2) Fiber (D6)/FC (D4)/ST (D3)/SC (D5)1 Responsivity at 1550 nm Ceramic (D1)/TO-18 (D2) Fiber (D6)/FC (D4)/ST (D3)/SC (D5)1

C30617

Abstract: InGaas PIN photodiode, 1550nm, 3.5Ghz sensors mttf PIN Photodiode 1550nm 1550nm photodiode 5 Ghz InGaas PIN photodiode, 1550 5ghz C30616 C30618 C30637 sled 1550
Contextual Info: Description High-speed InGaAs photodiodes from PerkinElmer Optoelectronics are designed for use in OEM fiber optic communications systems and highspeed receiver applications including trunk line, LAN, fiber-in-the-loop and data communications. Ceramic submount packages are available for

InGaAs quadrant

Abstract: C30822E UV245BG UV-215BQ C30971 C30641EH-TC FFD-100 YAG-100A
Contextual Info: Photodiodes for High-Performance Applications PIN Photo- PIN Photodiodes InGaAs and Si PIN Diodes, Quadrant Detectors, UV-Enhanced diodes For Industrial Applications InGaAs and Si PIN Diodes – Quadrant Detectors – UV-Enhanced Applications • Telecom

C30617BH

Contextual Info: Overview Features and Benefits This series of high speed InGaAs photodiodes is designed for use in OEM fiber-optic communications systems and high-speed receiver applications including trunk line, LAN, fiber-in-the-loop and data communications. Ceramic submount packages are available for easy

EG*G Optoelectronics

Abstract: C30642 eg and g laser diode C30641 indium gallium arsenide phosphide Indium Gallium Arsenide Phosphide lasers C30618 C30619 C86091E
Contextual Info: Il E G & G/CANADA/OPTOELEK •_ 47E D ■ □□□□Pflfl 2 ■ CANA 3030bl0 1550nm High Power Pulsed Laser I-» OPTOELECTRONICS C86091E -r-H h O S ■ ■ ■ ■ ■ The C 86091E is a high pow er single elem ent pulsed laser diode. W avelength is centered at 1550 nm to take advantage