tlp250f
Abstract: No abstract text available
Text: TLP250F INV TOSHIBA Photocoupler GaAℓAs IRed & Photo-IC TLP250F(INV) Transistor Inverters Inverter for Air Conditioners IGBT Gate Drivers Power MOSFET Gate Drivers Unit: mm The TOSHIBA TLP250F(INV) consists of a GaAℓAs light emitting diode optically coupled to an integrated photodetector and is housed in an
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TLP250F
TLP250
400119controlled
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driver photodiode tia
Abstract: TOSA model
Text: Preliminary Data Sheet May 2004 RQP1001 10 Gb/s PIN-TIA ROSA Description The RQP1001 10 Gb/s receiver optical subassembly ROSA integrates a 10 Gb/s PIN photodetector and a transimpedance amplifier (TIA) in a metallized ceramic package. These receiver optical engines are designed
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RQP1001
DS04-003-1
DS04-003)
driver photodiode tia
TOSA model
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AGILENT A 1610 OPTICAL
Abstract: No abstract text available
Text: Preliminary Data Sheet May 2004 RQA1001 10 Gb/s APD-TIA ROSA Description The RQA1001 10 Gb/s receiver optical subassembly ROSA integrates a 10 Gb/s APD photodetector and a transimpedance amplifier (TIA) in a metallized ceramic package. These receiver optical engines are designed
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RQA1001
DS04-004-1
DS04-004)
AGILENT A 1610 OPTICAL
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74hxx
Abstract: 74LSxx 6N139 HCPL-2730 74lxx cmos inv 6N138 HCPL-2731 6n139 0115 Quality Technologies optocouplers
Text: LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON OPTOCOUPLERS SINGLE-CHANNEL 6N138 6N139 DUAL-CHANNEL HCPL-2730 HCPL-2731 DESCRIPTION The 6N138/9 and HCPL-2730/HCPL-2731 optocouplers consist of an AlGaAs LED optically coupled to a high gain split darlington photodetector.
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6N138
6N139
HCPL-2730
HCPL-2731
6N138/9
HCPL-2730/HCPL-2731
HCPL-2730/HCPL2731,
DS300203
74hxx
74LSxx
6N139
HCPL-2730
74lxx
cmos inv
6N138
HCPL-2731
6n139 0115
Quality Technologies optocouplers
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Silicon Detector
Abstract: hybrid charge pinFET 900nm LED
Text: HYBRID PHOTODETECTORS API’s standard hybrid photodetectors are devices in which both a detector and transimpedance amplifier are mounted together on a common substrate, within a hermetic package. Hybrid devices offer numerous practical and performance benefits,
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10kHz
50x10-3
0x10-13
5x10-6
900nm
Silicon Detector
hybrid charge
pinFET
900nm LED
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Untitled
Abstract: No abstract text available
Text: June 2009 Rev – 1.1 Photodetector Sensor Board SP1202S03RB User’s Guide 2009 National Semiconductor Corporation. 1 http://www.national.com Table of Contents 1.0 Introduction .3
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SP1202S03RB
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MAX1356
Abstract: No abstract text available
Text: SP-12-xxx-xDFx Features z Date rate 622Mbps z 1310nm FP laser and PIN photodetector for 15km and 40km transmission z 1310nm DFB laser and PIN photodetector for 40km transmission z 1550nm uncooled DFB laser and PIN photodetector for 80km transmission z Digital diagnostic monitor interface compliant with
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SP-12-xxx-xDFx
622Mbps
1310nm
1550nm
SFF-8472
DS-5237
MAX1356
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Untitled
Abstract: No abstract text available
Text: Preliminary SP-DR-IR1-xDFM Features z Dual rate 155M/622Mbps z Up to 15km transmission on SMF z 1310nm FP laser and PIN photodetector z Digital diagnostic monitor interface compatible with SFF-8472 z SFP MSA package with duplex LC connector z +3.3V single power supply
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155M/622Mbps
1310nm
SFF-8472
MIL-STD-883E
GR-1089-CORE
EN55022
DS-5733
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SP-GB
Abstract: DS5203
Text: SP-GB-ELX-CDFH Features z Dual data-rate 1.25Gbps/1.0625Gbps z Up to 20km transmission on SMF z 1310nm FP laser and PIN photodetector z SFP MSA package with duplex LC connector z Digital diagnostic monitor interface compliant with SFF-8472 z +3.3V single power supply
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25Gbps/1
0625Gbps
1310nm
SFF-8472
MIL-STD-883E
GR-1089-CORE
EN55022
21CFR
EN60950,
DS-5203
SP-GB
DS5203
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5851
Abstract: 100BASE-LX
Text: SP-FE-LX-xDFM Features z Date rate 125Mbps z Up to 10km transmission on SMF z 1310nm FP laser and PIN photodetector z Digital diagnostic monitor interface compatible with SFF-8472 z SFP MSA package with duplex LC connector z +3.3V single power supply z Power consumption less than 1W
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125Mbps
1310nm
SFF-8472
MIL-STD-883E
GR-1089-CORE
EN55022
DS-5851
5851
100BASE-LX
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Untitled
Abstract: No abstract text available
Text: SP-DR-IR1-xDFH Features z Dual rate 155M/622Mbps z Up to 15km transmission on SMF z 1310nm FP laser and PIN photodetector z Digital diagnostic monitor interface compatible with SFF-8472 z SFP MSA package with duplex LC connector z +3.3V single power supply
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155M/622Mbps
1310nm
SFF-8472
MIL-STD-883E
GR-1089-CORE
EN55022
DS-5232
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ETX 100 RLC JDS Uniphase Corporation
Abstract: JDSU ETX 75 JDS ETX 75 LC InGaAs Receptacle LC JDSU ETX JDSU ETX 100 dual photodiode photodetector modules pin Photodiode 1550 nm
Text: COMMUNICATIONS COMPONENTS High Speed InGaAs Photodetector Receptacle Modules ETX 100 Key Features • Electro-optical - High responsivity at 1310 and 1550 nm - Bandwidth greater than 1 GHz - High sensitivity • Packaging - Small surface area, LC receptacle for PC boards
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100Rxx
ETX100
498-JDSU
5378-JDSU
ETX 100 RLC JDS Uniphase Corporation
JDSU ETX 75
JDS ETX 75
LC InGaAs
Receptacle LC
JDSU ETX
JDSU ETX 100
dual photodiode
photodetector modules
pin Photodiode 1550 nm
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Untitled
Abstract: No abstract text available
Text: Single-Channel: 6N135M, 6N136M, HCPL4503M Dual-Channel: HCPL2530M, HCPL2531M High Speed Transistor Optocouplers Features Description • High Speed –1 MBit/s The HCPL4503M, 6N135M, 6N136M, HCPL2530M, and HCPL2531M optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor.
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6N135M,
6N136M,
HCPL4503M
HCPL2530M,
HCPL2531M
HCPL4503M,
HCPL2531M
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photodetector 850 nm
Abstract: G417603 Ultrafast Photodetectors GmbH G4176-03
Text: PRELIMINARY DATA ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs G7096 SERIES (InGaAs) Ultrafast response of several tens picosecond FEATURES Ultrafast response G4176-03 : tr , tf = 30 ps (Typ.) G7096-03 : tr = 40 ps (Typ.) Low dark current G4176 series : 100 pA (Ta=25 °C)
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G4176
G7096
G4176-03
G7096-03
G4176-03
G4176-01
G7096-01
photodetector 850 nm
G417603
Ultrafast Photodetectors GmbH
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TLP582
Abstract: 1119a
Text: GaAßAs IRED TLP582 a PHOTO-IC Unit in mm HOS FET GATE DRIVER TRANSISTOR INVERTER The Toshiba TLP582 consists of a GaAiAs light emitting 1 8 .9 ± 0.3 diode and integrated high gain, high speed photodetector. The detector has a totem pole output stage that
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TLP582
TLP582
400ns
1119a
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Untitled
Abstract: No abstract text available
Text: TLP251 GaAGAs IRED & PHOTO-IC TLP251 INVERTER FOR A IR CO NDITIO NO R INDUCTION HEATING TRANSISTOR INVERTER P O W E R M O S FET GATE DRIVE IGBT GATE DRIVE The Toshiba T L P2 5 1 consists of a G a A f A s lig h t em itting diode and a integrated photodetector.
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TLP251
TLP251)
0-35V
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RNI55W
Abstract: No abstract text available
Text: Photodetector Sun 3mm Photodetector RNI30W Water Clear Lens Absolute Maximum Rating 25°C unless otherwise notes Collector to Emitter Breakdown Voltage 30V V br c e o Emitter to Collector Breakdown Voltage 5V Operating Temperature Range - 40 - + 85“C Lead Soldering Temperature (4mm for 5 Sec)
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RNI30W
100mW
100uA
100ohm
940nm
RNI55W
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photosensors
Abstract: ON1413A ON1413B
Text: Panasonic Integrated Photosensors ON1413A, ON1413B Integrated Photosensors 0.3 Unit : mm • Outline ON1413A and ON1413B are ultram iniature, highly reliable transm ittive photosensors consisting of a high-efficiency GaAs infrared light em itting diode chip that is integrated with a highsensitivity Si-integrated-photodetector chip in a double molded resin
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ON1413A,
ON1413B
ON1413A
ON1413B
ON1413A)
photosensors
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TLP582
Abstract: No abstract text available
Text: GaAßAs IRED & PHOTO-IC TLP582 TENTATIVE DATA nos FET Unit in mm GATE DRIVER TRANSISTOR INVERTER The Toshiba TLP582 consists of a GaA£As light emitting 18.9+0.3 diode and integrated high gain, high speed photodetector. The detector has a totem pole output stage that
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TLP582
TLP582
400ns
000V/ys
5000Vrms
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LN68
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LN68 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 5 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 950 nm (typ.)
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Infrared Emitting Diode
Abstract: LNA2901L
Text: Panasonic Infrared Light Emitting Diodes LNA2901L GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 9 m W /sr min. • Light emitting spectrum suited for silicon photodetectors • Transparent epoxy resin package
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LNA2901L
Infrared Emitting Diode
LNA2901L
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V30K20
Abstract: L440 diode GaAs 1000 nm Infrared Emitting Diode Infrared Emitting Diode LN54 LA440
Text: Panasonic Infrared Light Emitting Diodes LN54 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 4.6 mW typ. • Light emitting spectrum suited for silicon photodetectors • Infrared light emission close to m onochromatic light :
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LNA2801L
Abstract: No abstract text available
Text: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 6 m W /sr min. • Light emitting spectrum suited for silicon photodetectors
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LNA2801L
LNA2801L
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IR remote control
Abstract: BPW41D bpw41 ir diode remote control for remote control for garage OE29 ir remote 1040nm
Text: BPW41D INFRA-RED PHOTODETECTOR The BPW 41D is a large area, silicon p .i.n . p h o to d io d e having a lo w ju n ctio n capacitance and co n se qu e n tly capable o f fa s t response tim es. The active chip is packaged in a plastic m oulding w h ich contains a near infra-red tran sm issive filte r such th a t th e device is sensitive to infra-red
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BPW41D
BPW41D
IR remote control
bpw41
ir diode remote control
for remote control for garage
OE29
ir remote
1040nm
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