PHOTODETECTOR Search Results

TLP582

Abstract: 1119a
Contextual Info: GaAßAs IRED TLP582 a PHOTO-IC Unit in mm HOS FET GATE DRIVER TRANSISTOR INVERTER The Toshiba TLP582 consists of a GaAiAs light emitting 1 8 .9 ± 0.3 diode and integrated high gain, high speed photodetector. The detector has a totem pole output stage that

Contextual Info: TLP251 GaAGAs IRED & PHOTO-IC TLP251 INVERTER FOR A IR CO NDITIO NO R INDUCTION HEATING TRANSISTOR INVERTER P O W E R M O S FET GATE DRIVE IGBT GATE DRIVE The Toshiba T L P2 5 1 consists of a G a A f A s lig h t em itting diode and a integrated photodetector.

tlp250f

Contextual Info: TLP250F INV TOSHIBA Photocoupler GaAℓAs IRed & Photo-IC TLP250F(INV) Transistor Inverters Inverter for Air Conditioners IGBT Gate Drivers Power MOSFET Gate Drivers Unit: mm The TOSHIBA TLP250F(INV) consists of a GaAℓAs light emitting diode optically coupled to an integrated photodetector and is housed in an

driver photodiode tia

Abstract: TOSA model
Contextual Info: Preliminary Data Sheet May 2004 RQP1001 10 Gb/s PIN-TIA ROSA Description The RQP1001 10 Gb/s receiver optical subassembly ROSA integrates a 10 Gb/s PIN photodetector and a transimpedance amplifier (TIA) in a metallized ceramic package. These receiver optical engines are designed

AGILENT A 1610 OPTICAL

Contextual Info: Preliminary Data Sheet May 2004 RQA1001 10 Gb/s APD-TIA ROSA Description The RQA1001 10 Gb/s receiver optical subassembly ROSA integrates a 10 Gb/s APD photodetector and a transimpedance amplifier (TIA) in a metallized ceramic package. These receiver optical engines are designed

74hxx

Abstract: 74LSxx 6N139 HCPL-2730 74lxx cmos inv 6N138 HCPL-2731 6n139 0115 Quality Technologies optocouplers
Contextual Info: LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON OPTOCOUPLERS SINGLE-CHANNEL 6N138 6N139 DUAL-CHANNEL HCPL-2730 HCPL-2731 DESCRIPTION The 6N138/9 and HCPL-2730/HCPL-2731 optocouplers consist of an AlGaAs LED optically coupled to a high gain split darlington photodetector.

RNI55W

Contextual Info: Photodetector Sun 3mm Photodetector RNI30W Water Clear Lens Absolute Maximum Rating 25°C unless otherwise notes Collector to Emitter Breakdown Voltage 30V V br c e o Emitter to Collector Breakdown Voltage 5V Operating Temperature Range - 40 - + 85“C Lead Soldering Temperature (4mm for 5 Sec)

Silicon Detector

Abstract: hybrid charge pinFET 900nm LED
Contextual Info: HYBRID PHOTODETECTORS API’s standard hybrid photodetectors are devices in which both a detector and transimpedance amplifier are mounted together on a common substrate, within a hermetic package. Hybrid devices offer numerous practical and performance benefits,

photosensors

Abstract: ON1413A ON1413B
Contextual Info: Panasonic Integrated Photosensors ON1413A, ON1413B Integrated Photosensors 0.3 Unit : mm • Outline ON1413A and ON1413B are ultram iniature, highly reliable transm ittive photosensors consisting of a high-efficiency GaAs infrared light em itting diode chip that is integrated with a highsensitivity Si-integrated-photodetector chip in a double molded resin

Contextual Info: June 2009 Rev – 1.1 Photodetector Sensor Board SP1202S03RB User’s Guide 2009 National Semiconductor Corporation. 1 http://www.national.com Table of Contents 1.0 Introduction .3

MAX1356

Contextual Info: SP-12-xxx-xDFx Features z Date rate 622Mbps z 1310nm FP laser and PIN photodetector for 15km and 40km transmission z 1310nm DFB laser and PIN photodetector for 40km transmission z 1550nm uncooled DFB laser and PIN photodetector for 80km transmission z Digital diagnostic monitor interface compliant with

Contextual Info: Preliminary SP-DR-IR1-xDFM Features z Dual rate 155M/622Mbps z Up to 15km transmission on SMF z 1310nm FP laser and PIN photodetector z Digital diagnostic monitor interface compatible with SFF-8472 z SFP MSA package with duplex LC connector z +3.3V single power supply

SP-GB

Abstract: DS5203
Contextual Info: SP-GB-ELX-CDFH Features z Dual data-rate 1.25Gbps/1.0625Gbps z Up to 20km transmission on SMF z 1310nm FP laser and PIN photodetector z SFP MSA package with duplex LC connector z Digital diagnostic monitor interface compliant with SFF-8472 z +3.3V single power supply

5851

Abstract: 100BASE-LX
Contextual Info: SP-FE-LX-xDFM Features z Date rate 125Mbps z Up to 10km transmission on SMF z 1310nm FP laser and PIN photodetector z Digital diagnostic monitor interface compatible with SFF-8472 z SFP MSA package with duplex LC connector z +3.3V single power supply z Power consumption less than 1W

ETX 100 RLC JDS Uniphase Corporation

Abstract: JDSU ETX 75 JDS ETX 75 LC InGaAs Receptacle LC JDSU ETX JDSU ETX 100 dual photodiode photodetector modules pin Photodiode 1550 nm
Contextual Info: COMMUNICATIONS COMPONENTS High Speed InGaAs Photodetector Receptacle Modules ETX 100 Key Features • Electro-optical - High responsivity at 1310 and 1550 nm - Bandwidth greater than 1 GHz - High sensitivity • Packaging - Small surface area, LC receptacle for PC boards

TLP582

Contextual Info: GaAßAs IRED & PHOTO-IC TLP582 TENTATIVE DATA nos FET Unit in mm GATE DRIVER TRANSISTOR INVERTER The Toshiba TLP582 consists of a GaA£As light emitting 18.9+0.3 diode and integrated high gain, high speed photodetector. The detector has a totem pole output stage that

LN68

Contextual Info: Panasonic Infrared Light Emitting Diodes LN68 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 5 mW typ. • Light emitting spectrum suited for silicon photodetectors : XP = 950 nm (typ.)

Infrared Emitting Diode

Abstract: LNA2901L
Contextual Info: Panasonic Infrared Light Emitting Diodes LNA2901L GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 9 m W /sr min. • Light emitting spectrum suited for silicon photodetectors • Transparent epoxy resin package

V30K20

Abstract: L440 diode GaAs 1000 nm Infrared Emitting Diode Infrared Emitting Diode LN54 LA440
Contextual Info: Panasonic Infrared Light Emitting Diodes LN54 GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : P Q = 4.6 mW typ. • Light emitting spectrum suited for silicon photodetectors • Infrared light emission close to m onochromatic light :

LNA2801L

Contextual Info: Panasonic Infrared Light Emitting Diodes LNA2801L GaAIAs on GaAs Infrared Light Emitting Diode For optical control systems • Features • H igh-pow er output, high-efficiency : Ie = 6 m W /sr min. • Light emitting spectrum suited for silicon photodetectors

Contextual Info: Single-Channel: 6N135M, 6N136M, HCPL4503M Dual-Channel: HCPL2530M, HCPL2531M High Speed Transistor Optocouplers Features Description • High Speed –1 MBit/s The HCPL4503M, 6N135M, 6N136M, HCPL2530M, and HCPL2531M optocouplers consist of an AlGaAs LED optically coupled to a high speed photodetector transistor.

IR remote control

Abstract: BPW41D bpw41 ir diode remote control for remote control for garage OE29 ir remote 1040nm
Contextual Info: BPW41D INFRA-RED PHOTODETECTOR The BPW 41D is a large area, silicon p .i.n . p h o to d io d e having a lo w ju n ctio n capacitance and co n se qu e n tly capable o f fa s t response tim es. The active chip is packaged in a plastic m oulding w h ich contains a near infra-red tran sm issive filte r such th a t th e device is sensitive to infra-red

photodetector 850 nm

Abstract: G417603 Ultrafast Photodetectors GmbH G4176-03
Contextual Info: PRELIMINARY DATA ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs G7096 SERIES (InGaAs) Ultrafast response of several tens picosecond FEATURES Ultrafast response G4176-03 : tr , tf = 30 ps (Typ.) G7096-03 : tr = 40 ps (Typ.) Low dark current G4176 series : 100 pA (Ta=25 °C)

C56-58

Abstract: hamamatsu low dark current APD
Contextual Info: MODULE APD module C5658 Detects optical signals at 1 GHz, with high sensitivity APD module C5658 is a highly sensitive photodetector consisting of a Si APD avalanche photodiode , a bias power supply and a low-noise amplifier, all integrated into a compact case. The APD used has an effective active area of φ0.5 mm to allow efficient coupling to a light beam in