c3710a

Abstract: 2SC3710A C371 2SA1452A
Contextual Info: C3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process C3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A

Contextual Info: C3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process C3710A High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1452A

Contextual Info: C3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process C3710A High-Power Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1452A

C3710A

Abstract: 2SA1452A 2SC3710A
Contextual Info: C3710A シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ C3710A 通 信 工 業 用 ○ 大電力スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 6 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)

c3710a

Abstract: 2SA1452A 2SC3710A
Contextual Info: C3710A TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process C3710A High-Current Switching Applications • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1452A