C4159 Search Results
C4159 Price and Stock
TDK Electronics B41252C4159MCAP ALUM 15000UF 20% 16V SNAP TH |
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B41252C4159M | Bulk | 318 | 1 |
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Rochester Electronics LLC 2SC4159DTRANS NPN 160V 1.5A TO-220ML |
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2SC4159D | Bulk | 910 |
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Rochester Electronics LLC 2SC4159ETRANS NPN 160V 1.5A TO-220ML |
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2SC4159E | Bulk | 624 |
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TDK Electronics B41231C4159M000CAP ALUM 15000UF 20% 16V SNAP TH |
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B41231C4159M000 | Bulk | 320 |
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TDK Corporation B41252C4159M- Bulk (Alt: B41252C4159M000) |
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B41252C4159M | Bulk | 12 Weeks | 320 |
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C4159 Datasheets (5)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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C4159 | Hamamatsu | Low noise amplifier for InGaAs, PbS, PbSe and MCT detector | Original | 110.51KB | 2 | |||
C4159-01 | Hamamatsu | Low noise amplifier for InGaAs, PbS, PbSe and MCT detector | Original | 142.05KB | 2 | |||
C4159-02 | Hamamatsu | Low noise amplifier for InGaAs, PbS, PbSe and MCT detector | Original | 142.05KB | 2 | |||
C4159-03 | Hamamatsu | Low noise amplifier for InGaAs, PbS, PbSe and MCT detector | Original | 142.05KB | 2 | |||
C4159-04 | Hamamatsu | Low noise amplifier for InGaAs, PbS, PbSe and MCT detector | Original | 142.05KB | 2 |
C4159 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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C4159-05
Abstract: detector ingaas
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Original |
C4159/C5185 C3757-02 A4372-02 C4159-01 C4159-04 C4159-05 C4159-02 P7163) SE-171 KIRD1011E07 detector ingaas | |
Contextual Info: Amplifiers for infrared detectors C4159/C5185 series C3757-02 Low noise amplifiers for infrared detector InSb, InAs, InGaAs, MCT, PbS, PbSe Accessories Instruction manual Power cable (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) A4372-02 |
Original |
C4159/C5185 C3757-02 A4372-02 C4159 C5185 E3620A, E3630A SE-171 KIRD1011E10 | |
Contextual Info: Amplifier for infrared detector C4159/C5185 series C3757-02 Low noise amplifiers for infrared detector InSb, InAs, InAsSb, InGaAs, MCT, PbS, PbSe Accessories Instruction manual Power cable (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) A4372-02 |
Original |
C4159/C5185 C3757-02 A4372-02 C4159 C5185 E3620A, E3630A SE-171 KIRD1011E13 | |
transistor C4159
Abstract: photoconductive InSb C4159 preamplifier c4159 C4159-02 pbs photoconductive BNC/CONNECTOR BNC C3757-02 infrared manual C4159-01
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C4159/C5185 C3757-02 A4372-02 C4159-01 C4159-04 SE-171 KIRD1011E04 transistor C4159 photoconductive InSb C4159 preamplifier c4159 C4159-02 pbs photoconductive BNC/CONNECTOR BNC C3757-02 infrared manual C4159-01 | |
C4161
Abstract: C3746 B1134 B1133 d1913 k1420 J307 B1136 D1825 d1667
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OCR Scan |
O-220l T0220MF T0-220MI C4031# A1697 C4474 C4075 A1696 C4473 A1606 C4161 C3746 B1134 B1133 d1913 k1420 J307 B1136 D1825 d1667 | |
Contextual Info: Amplifier for infrared detector C4159/C5185 series C3757-02 Low noise amplifiers for infrared detector InSb, InAs, InAsSb, InGaAs, MCT, PbS, PbSe Accessories Instruction manual Power cable (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) A4372-02 |
Original |
C4159/C5185 C3757-02 A4372-02 C4159 C5185 E3620A, E3630A SE-171 KIRD1011E13 | |
c4159 eContextual Info: Amplifiers for infrared detectors C4159/C5185 series C3757-02 Low noise amplifiers for infrared detector InSb, InAs, InGaAs, MCT, PbS, PbSe Accessories Instruction manual Power cable (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) A4372-02 |
Original |
C4159/C5185 C3757-02 A4372-02 C4159 C5185 SE-171 KIRD1011E09 c4159 e | |
Contextual Info: 赤外線検出素子用アンプ C4159/C5185シリーズ C3757-02 赤外線検出素子 InSb, InAs, InAsSb, InGaAs, MCT, PbS, PbSe 用の低ノイズアンプ 付属品 必要な電源の仕様 取扱説明書 ・C4159シリーズ: ±15 V ± 0.5 ・C5185シリーズ: ±15 V ± 0.5 |
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C4159/C5185ã C3757-02 C4159ã C5185ã A4372-02 PMM18-2 PLD-18-2 E3620A, E3630A KIRDA0048JB | |
Contextual Info: INFRARED DETECTOR Amplifier for infrared detector C4159/C5185 series, C3757-02 Low noise amplifier for InGaAs, PbS, PbSe and MCT detector Accessories Accessory Optional l Instruction manual l 4-conductor cable (with a connector; 2 m) A4372-02 l Power supply (±15 V) |
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C4159/C5185 C3757-02 A4372-02 C3871 C4159-01 C4159-04 SE-171 KIRD1011E05 | |
transistor C4159
Abstract: C4159 C4159-03 4-Pin HIROSE hr10 Dewar C5185 P3981 C3757-02 C4159-01 C4159-04
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C4159/C5185 C3757-02 A4372-02 C4159 C5185 E3620A, E3630A SE-171 KIRD1011E11 transistor C4159 C4159-03 4-Pin HIROSE hr10 Dewar P3981 C3757-02 C4159-01 C4159-04 | |
C4159
Abstract: preamplifier c4159 C3757-02 C4159-01 C5185 C4159-03 p2750 C4159-04 E3630A C4159-05
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C4159/C5185 C3757-02 A4372-02 C4159: C5185: PMM18-2 PLD-18-2 E3620A, E3630A C4159-01 C4159 preamplifier c4159 C3757-02 C4159-01 C5185 C4159-03 p2750 C4159-04 E3630A C4159-05 | |
Contextual Info: Amplifiers for infrared detectors C4159/C5185 series C3757-02 Low noise amplifiers for infrared detector InSb, InAs, InGaAs, MCT, PbS, PbSe Accessories Instruction manual Power cable (one end with 4-pin connector for connection to amplifier and the other end unterminated, 2 m) A4372-02 |
Original |
C4159/C5185 C3757-02 A4372-02 C4159 C5185 SE-171 KIRD1011E08 | |
C4159
Abstract: C5185 C3757-02 C4159-01 C4159-02 C4159-03 C4159-04 C5185-01 P7163 detector ingaas
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Original |
C4159/C5185 C3757-02 A4372-02 C4159-01 C4159-04 C4159-05 C4159-02 P7163) SE-171 KIRD1011E07 C4159 C5185 C3757-02 C4159-01 C4159-02 C4159-03 C4159-04 C5185-01 P7163 detector ingaas | |
Contextual Info: INFRARED DETECTOR InSb photovoltaic detector P5968/P4247 series High-speed response, low-noise photovoltaic detector P5968/P4247 series are photovoltaic detectors having high sensitivity in the so-called atmospheric window at 3 to 5 µm. Custom devices are also |
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P5968/P4247 P7751-01 P5968-060. P7751-02 P5968-200. SE-171 KIRD1039E06 | |
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Contextual Info: PHOTODIODE InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR near infrared detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise. |
Original |
G8605 SE-171 KIRD1049E02 | |
N10110Contextual Info: INFRARED DETECTOR InAs photovoltaic detector P8079 series, P7163 Infrared detectors with high sensitivity and high-speed response InAs photovoltaic detectors have high sensitivity and high-speed response in the near infrared region from 1.5 to 3.8 µm. These detectors offer better characteristics than PbSe photoconductive detectors. |
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P8079 P7163 A31Telephone: SE-171 KIRD1027E06 N10110 | |
InSb spectral responseContextual Info: InSb photovoltaic detectors P5968/P4247 series High-speed response, low-noise photovoltaic detectors The P5968/P4247 series are photovoltaic detectors having high sensitivity in the so-called atmospheric window at 3 to 5 m. Custom devices are also available to meet your special request. |
Original |
P5968/P4247 P7751-01 P5968-060. P7751-02 P5968-200. C4159-01 SE-171 KIRD1039E07 InSb spectral response | |
Contextual Info: Ge Photodiodes Non-cooled Types NIR (Near Infrared) detectors for stable operation at room temperature • High stability over extended time periods Ge photodiodes are planar type photovoltaic devices that provide stable responsivity over extended time periods. |
OCR Scan |
C4159 P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, KIRDA0041EA | |
Contextual Info: Infrared Detectors with Built-in Preamplifiers Dewar Types Easy-to-use, high performance de vices with the ultimate in responsivity These devices combine a dewar type detector with a matched pream plifier into a metal case. Simply by connecting to a DC power supply, |
OCR Scan |
P3357-02) P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, KIRDA0041EA | |
G5832Contextual Info: Spectral Response 0.7 to 1.7 |iim • Spectral Response • Dark Current vs. Reverse Voltage • Terminal Capacitance vs. Reverse Voltage Typ.Ta=25’C.1=1MHz 0.6 0.8 1.0 1.2 1.4 1.6 1.8 WAVELENGTH (/im ) 2.0 1 0 -' The cut-off wavelengths of the TE-cooled de |
OCR Scan |
KIRD80039EA P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, KIRDA0041EA G5832 | |
Contextual Info: Ge Photodiodes Cooled Types Achieves higher S/N ratio by cooling • Optimized for low level infrared photometry • Lower temperature detection limit: Approx. 200 °C By cooling Ge photodiodes, the dark current can be reduced effec tively and the S/N ratio improved. |
OCR Scan |
P3226-02 P394A, P3207-04 P791-11 P4115 P3981-01, K3413-01, K1713-01, KIRDA0041EA P2750, | |
P4488
Abstract: G5832-05 G5832-11 KI80 pbse B1920-01 a7050
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OCR Scan |
P4488 P3514 KI80A0055EA 0G0470 P394A, P3226-02 P791-11 P3207-04 P4115 K1713-01, G5832-05 G5832-11 KI80 pbse B1920-01 a7050 | |
1/SAA 1014Contextual Info: InGaAs PINフォトダイオード G12180シリーズ ϕ0.3 mmからϕ5 mmまでさまざまな受光面サイズを用意 InGaAs PINフォトダイオードは並列抵抗が大きくノイズが小さいという特長をもっています。ϕ0.3 mmからϕ5 mmま |
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G12180ã G12180-210A G12180-220A /-230A/-250A KIRDA0247JA KIRD1121J06 1/SAA 1014 | |
InSb spectral response
Abstract: P5172 detector inas
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OCR Scan |