C418 Search Results

Contextual Info: Document 599-1 RE U T A R E P M E T HIGH SMT Power Inductors – MSS1260T • Designed for high ambient temperatures – 125°C • Very low DCR, excellent current handling • Magnetic shielding allows high density mounting. Designer’s Kit C418 contains 3 each of all values

Contextual Info: Document 599-1 RE U T A R E P M E T HIGH SMT Power Inductors – MSS1260T • Designed for high ambient temperatures – 125°C • Very low DCR, excellent current handling • Magnetic shielding allows high density mounting. Designer’s Kit C418 contains 3 each of all values

c418 equivalent

Abstract: C418 MSS1260T-224K SR-332 MSS1260T-473ML
Contextual Info: Document 599-1 RE U T A R E P M E T HIGH SMT Power Inductors – MSS1260T • Designed for high ambient temperatures – 125°C • Very low DCR, excellent current handling • Magnetic shielding allows high density mounting. Designer’s Kit C418 contains 3 each of all values

Contextual Info: Document 599-1 RE U T A R E P M E T HIGH SMT Power Inductors – MSS1260T • Designed for high ambient temperatures – 125°C • Very low DCR, excellent current handling • Magnetic shielding allows high density mounting. Designer’s Kit C418 contains 3 each of all values

Contextual Info: Document 599-1 RE U T A R E P M E T HIGH SMT Power Inductors – MSS1260T • Designed for high ambient temperatures – 125°C • Very low DCR, excellent current handling • Magnetic shielding allows high density mounting. Designer’s Kit C418 contains 3 each of all values

9973

Contextual Info: Spec. No. : C418J3 Issued Date : 2008.08.20 Revised Date : 2009.02.04 Page No. : 1/7 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN9973J3 BVDSS ID RDSON 60V 14A 80mΩ Features • VDS=60V RDS ON =80mΩ(max.)@VGS=10V, ID=9A RDS(ON)=100mΩ(max.)@VGS=4.5V, ID=6A

Contextual Info: Document 599-1 RE U T A R E P M E T HIGH SMT Power Inductors – MSS1260T • Designed for high ambient temperatures – 125°C • Very low DCR, excellent current handling • Magnetic shielding allows high density mounting. Designer’s Kit C418 contains 3 each of all values

Contextual Info: Document 599-1 RE U T A R E P M E T HIGH SMT Power Inductors – MSS1260T • Designed for high ambient temperatures – 125°C • Very low DCR, excellent current handling • Magnetic shielding allows high density mounting. Designer’s Kit C418 contains 3 each of all values

MEN9973J3

Contextual Info: Spec. No. : C418J3-E Issued Date : 2009.02.10 Revised Date : Page No. : 1/7 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MEN9973J3 BVDSS ID RDSON 60V 12A 100mΩ Features • VDS=60V RDS ON =80mΩ(max.)@VGS=10V, ID=9A RDS(ON)=100mΩ(max.)@VGS=5V, ID=6A

Contextual Info: Document 599-1 RE U T A R E P M E T HIGH SMT Power Inductors – MSS1260T • Designed for high ambient temperatures – 125°C • Very low DCR, excellent current handling • Magnetic shielding allows high density mounting. Designer’s Kit C418 contains 3 each of all values

C-418

Abstract: c418
Contextual Info: Document 599-1 RE U T A R E P M E T HIGH SMT Power Inductors – MSS1260T • Designed for high ambient temperatures – 125°C • Very low DCR, excellent current handling • Magnetic shielding allows high density mounting. Designer’s Kit C418 contains 3 each of all values

Contextual Info: Document 599-1 RE U T A R E P M E T HIGH SMT Power Inductors – MSS1260T • Designed for high ambient temperatures – 125°C • Very low DCR, excellent current handling • Magnetic shielding allows high density mounting. Designer’s Kit C418 contains 3 each of all values

Contextual Info: Document 599-1 RE U T A R E P M E T HIGH SMT Power Inductors – MSS1260T • Designed for high ambient temperatures – 125°C • Very low DCR, excellent current handling • Magnetic shielding allows high density mounting. Designer’s Kit C418 contains 3 each of all values

AD308

Abstract: AD581 AD581J AD581K AD581KH AD581L AD581S AD581U
Contextual Info: a FEATURES Laser Trimmed to High Accuracy: 10.000 Volts ؎5 mV L and U Trimmed Temperature Coefficient: 5 ppm/؇C max, 0؇C to +70؇C (L) 10 ppm/؇C max, –55؇C to +125؇C (U) Excellent Long-Term Stability: 25 ppm/1000 hrs. (Noncumulative) Negative 10 Volt Reference Capability

R5F5631

Abstract: R5F563NBDDFP A083H RX631 100-6 p86 A161H ir127 capacitor PMR 202 DM IPR200 c04f
Contextual Info: Features RX63N Group, RX631 Group Renesas MCUs R01DS0098EJ0100 Rev.1.00 Jun 13, 2012 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, up to 2-MB flash memory, Ethernet MAC, full-speed USB 2.0 host/function/OTG interface, various communications interfaces including CAN, 10- & 12-bit A/D

MARKING C4

Abstract: C4-R10K C4-R12K C4-R15K C4-R18K C4-R22K C4-R39K C4-R47K C4-R56K
Contextual Info: 104 AXIAL CONFORMAL COATED RF INDUCTOR SERIES C4 FEATURES - Superior Q - Low price - Uniform coating ELECTRICAL CHARACTERISTICS - Inductance range - Tolerance - Rated current - Testing procedures 0.10µH to 1000µH ±10% over entire range* Based on Lo changes within

Contextual Info: Features Datasheet RX64M Group Renesas MCUs R01DS0173EJ0100 Rev.1.00 Jul 31, 2014 120-MHz 32-bit RX MCU, on-chip FPU, 240 DMIPS, up to 4-MB flash memory, 512-KB SRAM, various communications interfaces including IEEE 1588-compliant Ethernet MAC, full-speed USB 2.0 with battery charging, SD host interface optional , quad SPI, and CAN, 12-bit A/D

R5F51115AGFL

Abstract: R5F51113ADNF R5F51113ADFM
Contextual Info: Datasheet RX111 Group Renesas MCUs 32 MHz 32-bit RX MCUs, 50 DMIPS, up to 512 Kbytes of flash memory, USB 2.0 full-speed host/function/OTG, up to 6 comms channels, 12-bit A/D, 8-bit D/A, RTC R01DS0190EJ0120 Rev.1.20 Sep 29, 2014 Features • 32-bit RX CPU core

Contextual Info: User’s Manual 32 Cover RX630 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

eeprom programmer schematic 24c08

Abstract: motorola TP230 eeprom programmer schematic 24c02 transistor C458 C458 datasheet GMC21X7R104K50NT philips c399 RM10F1000CT IC 24c08 transistor c331
Contextual Info: Preliminary ThunderSWITCH 8/3 Schematics Description and Schematics Reference Guide: SPWA023 Networking Business Unit Revision 0.2 April 1998 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or

C-418

Abstract: CPV363MM diode c424
Contextual Info: CPV363MM IGBT SIP MODULE Short Circuit Rated Fast IGBT Features 1 • Short Circuit Rated - 10µs @ 125°C, V GE = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes

J122

Abstract: j3305 J122 transistor transistor j122 J380 motorola g24 motorola J122 R747 diode s m r707 C143 T transistor
Contextual Info: Technical Information M OTOROLA G24 D EVELOPER ’S G UIDE D EVELOPER ’ S K IT ENGLISH JANUARY 31, 2007 6889192V26-E MRC Components OHG, Ob. Domberggasse 7, D-85354 Freising Tel. +49-8161-9848-0, Fax +49-8161-9848-20 E-mail: info@mrccomponents.de Web: www.mrccomponents.de

motorola g24

Abstract: 2SSA-3.0-S-05 g24 motorola module motorola D102 user guide D SUB connector ITT Cannon C143 E S S transistor gsm booster circuit gsm signal Booster 85 SMA-50-0-144 MAC8 Series 2SSA-3.0-S-05
Contextual Info: Technical Information M OTOROLA G24 D EVELOPER ’ S G UIDE D EVELOPER ’S K IT ENGLISH JANUARY 1, 2006 6889192V26-A MRC Components OHG, Ob. Domberggasse 7, D-85354 Freising Tel. +49-8161-9848-0, Fax +49-8161-9848-20 E-mail: info@mrccomponents.de Web: www.mrccomponents.de

smd diode c644

Abstract: diode c649 smd diode c548 C748 SMC transistor C734 smd diode c549 C706 diode c624 DIODE smd diode C645 diode c741
Contextual Info: Octal, 12-Bit, 40/50 MSPS Serial LVDS 1.8 V A/D Converter AD9222 8 ADCs integrated into 1 package 93 mW ADC power per channel at 50 MSPS SNR = 70 dB to Nyquist ENOB = 11.3 bits SFDR = 84 dBc Excellent linearity DNL = ±0.3 LSB (typical) INL = ±0.4 LSB (typical)