C639 10 Search Results

TI1225

Abstract: GAD16 HA17 MAA8 HA21 JT47 AC18-AC19 HA20
Contextual Info: 2 3 C639 C630 C635 0.1U 0603B 0.1U 0603B 0.1U 0603B 0.1U 0603B GND VCC3 C622 C633 C624 C632 1000P 0603B 1000P 0603B 1000P 0603B 1000P 0603B B 9,20 9,20 9,20 9,20 9,20 9,20 9,20 9,20 9,20 G_GNT# G_REQ# G_PAR G_STOP# G_TRDY# G_IRDY# G_DEVSEL# G_FRAME# G_PIPE#

c639

Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

c639

Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Contextual Info: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04

transistor C639

Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W

transistor C639

Abstract: transistor C635 c639 transistor C639 w
Contextual Info: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS T, = 25°C Characteristic Collector Emitter Voltage: BC635 at R b e = 1Kohm : BC637 : BC639 Collector Emitter Voltage: BC635

c639

Abstract: c637 diode diode C639 Micro6 Package for c639 C639 10 C637
Contextual Info: PD - 9.1540A International IO R Rectifier IRLMS1902 HEXFET Power M O SFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on N-Channel MOSFET r- 1 0: : - • • i : D V d s s = 20V i : G 1 : .J - - _

c639

Abstract: KCB06 YB638 kyocera lcd Inverter B638 BHR-03VS-1 SM02 inverter tbd
Contextual Info: SPEC.NO. TQ3C-8EAC0-E1AASD26-00 DATE August 04, 1999 S P E C FOR : TYPE : KCBO 6 5 H V 1 A C - G 60 C O N T E N T S 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. Application Construction and Outline Mechanical Specifications Absolute Maximum Ratings Electrical Characteristics

transistor C639

Abstract: C639 c638 transistor transistor C636 transistor C635 transistor C640 c638 diode c637 transistor c640 transistor transistor C639 w
Contextual Info: PD - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

c638 transistor

Abstract: C639 transistor C639 c637 transistor transistor C640 transistor C636 c63610 c640 transistor C633 transient transistor C635
Contextual Info: PD - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

C639

Abstract: transistor C639 transistor C640 c638 transistor c637 transistor transistor C635 transistor C636 c640 transistor transistor C639 w IRGP430UD2
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1063 IRGP430UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 500V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes

samsung r540

Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Contextual Info: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP

C2625 transistor

Abstract: C5679 transistor TRANSISTOR C3675 C5679 C2655 NPN Transistor transistor c5855 c3746 transistor transistor c3746 transistor C4770 c5855
Contextual Info: Rack & Cabinet Mounting Converters 150-12 k Watts C SERIES CE Marked - LVD & EMC • Over 1700 Different Models • DC Inputs 10 - 900 Volts • Single & Multi Outputs • Fully Wired Customised Racks • Parallel Redundant Systems • Euro Cassette or Wall Mount

BC647

Abstract: bc657 C1093 smd diode c644 DIODE SMD c336 BC679 BC625 smd diode C645 smd diode c640 smd diode R645
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

77C7

Abstract: 887c 1r12r
Contextual Info: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23

transistor C639

Abstract: transistor c63916 c63916 bc639 equivalent transistor C63910 free download transistor data sheet c63910 all transistor data sheet c639 transistor equivalent table
Contextual Info: BC639; BCP56; BCX56 80 V, 1 A NPN medium power transistor series Rev. 07 — 8 March 2005 Product data sheet 1. Product profile 1.1 General description NPN medium power transistor series. Table 1: Product overview Type number [1] Package PNP complement Philips

76M12

Abstract: u19 c629 c639 M21125 microwave inverter panasonic c86 sot23-8 smd m21 sot23 panasonic inverter microwave diode C646 PANASONIC C372
Contextual Info: M21125/M21115 Evaluation Module User Guide 21125-EVMD-001-A February 2009 Revision History Revision Date A February 2009 21125-EVMD-001-A Description Initial release Mindspeed Technologies Mindspeed Proprietary and Confidential 2 Contents 1.0 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

C3604BD-F

Abstract: EMI500 samsung r540 100nF 50V X7R samsung 1608 resistor r336 r331 r322 r330 r1 B536 c796 b527 B538 c337 pnp
Contextual Info: - This Document can not be used without Samsung's authorization - 10. Part List 1 Internal System 10/100) Internal System(10/100 Mbit) Location R231 SEC Code Name 2007-000070 R-CHIP 0ohm,5%,1/10W,TP,1608, Specification Quantity 1 2007-000171 R-CHIP 0ohm,5%,1/16W,TP,1005,

HCB3216K-601T20

Abstract: 2203-000254 R1005 c223 AR517 CDRH104R-100MC R797 R-783 C937 C886 2A AR5112
Contextual Info: Sens Q 20 HJ KIM WS JUNG Kevin APPROVAL CETUS Main BA41-00377A MP 1.0 2003. 4. 24 CHECK : : : : : DRAW Model Name PCB Code Dev. Step Revision T.R. Date CPU :BANIAS LV Chip Set :855GM Remarks : CETUS 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17.

DS493

Contextual Info: Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 11. Mai n System PartLi st CODE DESCRI PTI ON REFERENCE EA 3920501 j ack-usb-4p-mnt4,JACK-USB;-,-,-,-,- J505 J2501 J2502 3 0401-000191 di ode,DI ODE-SWI TCHI NG;MMBD4148,75V,200MA,SOT-23,TP

PT116

Abstract: pt136 PC821 PT137 max1987 Samsung R590 pt118 PC807 samsung r540 samsung R530
Contextual Info: 7 Schematic Diagrams and PCB Silkscreen This Document can not be used without Samsung’s authorization. 7-1-4 PCB SilkScreen 7-104 P30 This Document can not be used without Samsung’s authorization. P30 7 Schematic Diagrams and PCB Silkscreen 7-105 7 Schematic Diagrams and PCB Silkscreen

C624000XFSD18XA

Abstract: ST2W008 RT8070SP PCIE_rext C625000XFSD18XA
Contextual Info: 5 4 3 2 1 SABER LITE REV-D USB PORT1 Power Rail D 5 VOLT IN 5VOLTS 4AMPS AC ADAPTER SWITCHING REGULATORS USB OTG Power Rail D USB PORT2 USB HOST RJ45 MOLEX CONNECTOR USB PORT3 SD4 UARTS RS-232 SERIAL FLASH JTAG USB TYPE A USB2514 RGMII KSZ9021RN C Micro USB

RFU20

Abstract: c639 ph ST C733 RFU10 LB506 ics c10 100u 1p8 c606 quanta rt1 ST C744 quanta FG
Contextual Info: 5 4 3 2 1 U9A CN1A 3V3RUN MBGA820-NVIDIA-G3 COMMON NONPHY-X16 1.5A PEX1V2 FG-13X91-20-230P 1/14 PCI_EXPRESS COMMON C2 .1U/B C3 .1U/B 1/2 226 228 230 PCI-Express, Power PEX_IOVDD_0 PEX_IOVDD_1 PEX_IOVDD_2 PEX_IOVDD_3 PEX_IOVDD_4 PEX_IOVDD_5 3V3RUN 3V3RUN 3V3RUN

Contextual Info: - Thi s Documentcan notbe used wi thoutSamsung' s authori zati on - 10. PartList 1 Main Board Main Board Location SEC Code Name Specification Quantity B504 3301-000314 BEAD-SMD 120ohm,1.6x0.8x0.8mm,-,-,- 1 B510 3301-000314 BEAD-SMD 120ohm,1.6x0.8x0.8mm,-,-,-

smd w08 SOT23

Abstract: 32N03 MS-10422 L02 SOP8 SMD-3528 SOT23-6 T20 T04 p6 smd smd g1.l smd m3c micro-star
Contextual Info: 5 4 3 2 1 D D 10422: MXM-II, G3, 128/256MB, 128-bit, 8/16Mx32 DDR-3 LVDS,DVI_A, DVI_B,TV_OUT,VGA Table of Contents HISTORY: Page 1: Overview Page 2: PCI EXPRESS Interface Page 3: Frame Buffer A GPU Page 4: Frame Buffer A Memories Page 5: Frame Buffer C GPU