CAP 0805 ATC 600F Search Results

CAP 0805 ATC 600F

Abstract: ATC 600F 600F
Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:

Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:

CAP 0805 ATC 600F

Abstract: DK0033 ATC 600F DK0032 DK0034 u1560 MIL-PRF-123 RO4350 CERAMICS CAPACITORS 0402 0805 NPO
Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marked • High Self Resonance Frequencies Applications: • Cellular Base Station Equipment

case marking y9

Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:

ATC 600F

Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:

CAP 0805 ATC 600F

Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:

Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:

CAP 0805 ATC 600F

Abstract: ATC 600F DK0033T DK0034T diode MARKING CODE A9 DK0035T 250v 104 K capacitor DK00 DK0032T EIA J code marking
Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:

Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:

CAP 0805 ATC 600F

Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:

Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:

CAP 0805 ATC 600F

Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:

ATC 600F

Abstract: DK0032
Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marked Optional • High Self Resonance Frequencies Applications: • Cellular Base Station Equipment

DK0032

Abstract: DK0034 capacitor 6r8 ATC 600F DK0033
Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marked Optional • High Self Resonance Frequencies Applications: • Cellular Base Station Equipment

CAP 0805 ATC 600F

Abstract: chip resistor 1206 CW-37 American Technical Ceramics GaAs FET chip GRM39Y5V104Z25V murata cw
Contextual Info: TC2997D REV3_20050418 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs PHOTO ENLARGEMENT FEATURES • 20W Typical Power at 2.45 GHz • 10dB Typical Linear Power Gain at 2.45 GHz • High Linearity: IP3 = 52 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 %

Contextual Info: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar

Contextual Info: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar

Contextual Info: CGHV14500 500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14500 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for 1.2 - 1.4 GHz L-Band radar

Contextual Info: CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar

Contextual Info: CGHV14250 250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems Cree’s CGHV14250 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for 1.2 - 1.4 GHz L-Band radar

diode 400V 1A SOD-123

Abstract: 10uF CAPACITOR 1210 PACKAGE GRM39Y5V104Z25V RO4003 600F0R GRM42-6Y5V106Z25V cap 0805 RF capacitor
Contextual Info: TC3741 REV0_20070111 9.5 – 10.5 GHz 2W Single Bias MMIC FEATURES PHOTO ENLARGEMENT ! P-1 dB: 33 dBm ! Small Signal Gain: 11 dB ! Power Added Efficiency: 25 % ! IP3: 42 dBm ! Input/Output 50 Ω Match ! Bias condition: 1100 mA @ 10 V DESCRIPTION The TC3741 is a 2-stage PHEMT Single Bias MMIC power amplifier. It is designed for use in low cost and high

cgh40120

Abstract: CGH4012 CAP 0805 ATC 600F 0805 SMD resistors derating L-14C6N8ST cgh401 CGH40120P transistor SMD 3906
Contextual Info: CGH40120P 120 W, RF Power GaN HEMT Cree’s CGH40120P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and

Contextual Info: CGH40120P 120 W, RF Power GaN HEMT Cree’s CGH40120P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and

Contextual Info: CGH40120P 120 W, RF Power GaN HEMT Cree’s CGH40120P is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and