CB SOT23 Search Results

KV1225

Abstract: KV1235Z KV1226
Contextual Info: DIODES TO K O 22 Y Variable Capacitance Diodes Application For AM Layout 3 element C iv: 5 1 0 -6 2 0 2 element C 25v :16~26 Capacitance ratio A C Max. Package 200 3°/o * 3 CB-3-6 1V, 1MHz 2% * 3 CB-2-4 CB-1-2 KV1225 Tun. KV1226 Tun. KV1230Z VCO 1 element

M208F

Contextual Info: MICROWAVE SILICON COMPONENTS Case styles M208f Cb=0.12pF S268/W1 F 0.06 E 0.55 D 5 0.1 0.65 .0024 Cb=0.2pF .024 .035 0.51 0.60 .020 .024 ∅ 2.44 ∅ 2.64 .096 DIA .104 DIA .026 .200 E 0.21 0.31 .008 .012 D 1.71 2.00 .067 .079 .022 9.8 10.2 .392 .408 1.35

LCD PANASONIC INVERTER DIAGRAM

Abstract: 560k ohm resistor 2pin 4 MHz crystal Small DIP GRAPHICAL LCD INTERFACING DIAGRAM graphical LCD with 3.3 volt pot 10k AD5200BRM10 lcd 240 320 lcd pcb to lcd control wire diagram CB-GT570
Contextual Info: CB-GT570 Hardware Specifications This page provides hardware and electrical documentation for the Controller Board Rev. H2, part number CB-GT570. This is the same LCD controller board integrated with the 5.7" LCD Starter Kit STK-GT570 and the 5.7" LCD Module Kit (MK-GT570). References to software in this document refer to the

KDV152S

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV152S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO for CB, C/P PLL APPLICATION. FEATURES • Low Series Resistance : rs=0.3 Typ. . • Small Package. DIM MILLIMETERS A B 1.30+0.20/—0.15 2.93Ì0.20 C 1.30 MAX

c5v diode

Abstract: KDV251M KDV251S 127 S0T23 cov marking S0T23
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV251M/S VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR C/P, CB PLL FEATURES • Low Series Resistance : 0.6£2 Max. • High Capacitance Ratio : 1.7(Min.) —2.2(Max.) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC

2N5551S

Abstract: sot23 transistor marking ZF
Contextual Info: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO LTD 2N5551S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES DIM • High Collector Breakdwon Voltage : V Cbo=180V, V Ceo=160V • Low Leakage Current. : ICBo=50nA Max. V cb=120V

c5v diode

Abstract: diode c5v
Contextual Info: KDV251M/S SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA VCO FOR C/P, CB PLL B A FEATURES Low Series Resistance : 0.6 Max. O F High Capacitance Ratio : 1.7(Min.) 2.2(Max.) H G M RATING UNIT Reverse Voltage VR 12 V

c8v sot

Abstract: KDV152S
Contextual Info: KDV152S SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA VCO for CB, C/P PLL APPLICATION. FEATURES E B L ᴌLow Series Resistance : rS=0.3 Typ. . L 3 G H A 2 D ᴌSmall Package. 1 MAXIMUM RATING (Ta=25ᴱ) UNIT VR 15 V

Contextual Info: KDV251M/S SEM ICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TE CHNICAL DATA VCO FOR C/P, CB PLL FEATURES • Low Series Resistance : 0.6 £2 Max. • High Capacitance Ratio : 1.7(Min.)~2.2(Max.) n r "j 0T 3 DIM M ILLIM ETER S A 3.20 MAX

sot23 transistor marking 12E

Abstract: 12E MARKING kec marking N
Contextual Info: SEMICONDUCTOR KTC3790S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VHF/UHF WIDE BAND AMPLIFIER APPLICATION. FEATURES • Low Noise Figure, High Gain. • NF=1.2dB, |S2le|2=13dB f=lGHz . ° MAXIMUM RATING (Ta=25°C) ! SYMBOL V cB O V cE O V e bo Ic J i Mlà

Contextual Info: N AMER PHILIPS/DISCRETE E5E D • hbS3T31 QQlbEHE 5 ■ Surface Mount Devices HIGH VOLTAGE TRANSISTORS cont. ’ TYPE PACKAGE -•.- RATINGS hFE •c V<iE(sat) " m ax « atlc% / ’ mA/mA ' ’ .*r. typmh2 PINOUT SEE SECTION Vt VCEO V V cB C ¥ mA 20 50

MMBTA92

Abstract: SOT-23 2D
Contextual Info: MMBTA92 High-Voltage PNP Transistor Surface Mount COLLECTOR 3 3 1 1 BASE P b Lead Pb -Free 2 SOT-23 2 EMITTER Maximum Ratings Rating Collector-E m itter Voltage Collector-B as e Voltage E m itter-B as e VOltage Collector Current-Continuous Symbol V CE O V CB O

Contextual Info: MMBTA92 High-Voltage PNP Transistor Surface Mount COLLECTOR 3 3 1 1 BASE P b Lead Pb -Free 2 SOT-23 2 EMITTER Maximum Ratings Rating Collector-E m itter Voltage Collector-B as e Voltage E m itter-B as e VOltage Collector Current-Continuous Symbol V CE O V CB O

BC-337 B 011

Abstract: BC 195 TRANSISTORS transistors BC 23 SO2221R BC-338 B 011 SO2484R BC 930 222-1 2221 bc 107 silicon equivalent
Contextual Info: A C T IV E COMPONENTS FOR H Y B R ID CIRCU ITS COMPOSANTS A CTIFS POUR CIRCUITS HYBRIDES ê CB-166 SOT-23 Silicon NPN transistors, switching and general purpose Marl ing Mart,tuage Type Type N R . Pin conf. Brochage Transistors NPN silicium, usage générai et commutation

Contextual Info: KST55/56 PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol Collector Base Voltage Rating Unit -60 -80 V V T stg -60 -80 -4 -500 350 150 V V V mA mW °C R-m(j-a) 357 °C/W V cB O : KST55 : KST56

capacitor 10MF smd

Abstract: 10mf 16v 0603 capacitor 10mf 6v capacitor SMD footprint 10uH inductor 1mF CAPACITOR capacitor 10mf 16v CAPACITOR SMD sot-23 C6 CDRH6D28-100NC
Contextual Info: Bill of Materials for the NCP 1450 Bipolar Transitor 3.3V Demonstration Board h 8/28/2003 Designator Quantity IC2 D2 Q2 C5 C4 C6 Cb Rb L2 1 1 1 1 1 1 1 1 1 Description Value PWM Step-up DC-DC controller Schottky Power Rectifier Bipolar Power NPN Low Profile Tantalum Capacitor

10mf 16v 0603

Abstract: npn smd 3a capacitor 10MF smd capacitor SMD footprint NCP1450 CAPACITOR TANTALUM panasonic H8 SOT-23 CDRH6D28-100NC 10uH inductor capacitor 10mf 16v
Contextual Info: Bill of Materials for the NCP 1450 Bipolar Transitor 5.0V Demonstration Board h 8/28/2003 Designator Quantity IC2 D2 Q2 C5 C4 C6 Cb Rb L2 1 1 1 1 1 1 1 1 1 Description Value PWM Step-up DC-DC controller Schottky Power Rectifier Bipolar Power NPN Low Profile Tantalum Capacitor

capacitor 10MF

Abstract: capacitor 10mf 16v inductor 10uH capacitor 10MF smd NCP1450 10mf 16v 0603 H8 SOT-23 npn smd 3a 10uH inductor 1mF CAPACITOR
Contextual Info: Bill of Materials for the NCP 1450 Bipolar Transitor 3.0V Demonstration Board h 8/28/2003 Designator Quantity IC2 D2 Q2 C5 C4 C6 Cb Rb L2 1 1 1 1 1 1 1 1 1 Description Value PWM Step-up DC-DC controller 3.0 V Schottky Power Rectifier Bipolar Power NPN 3A 30V

Contextual Info: ALLEGRO MICROSYSTEMS INC LIE ]> • 0504330 000b3A7 ■ A L 6R PNP TRANSISTORS TO-92ITO-226AA V*3 W and ‘T P DEVICE TYPES ELECTRICAL CHARACTERISTICS at TA = 25°C 'cBO DC Current Gain v CEIMl] * le V Max. v BR CBO V y(BR>CEO * (BR)EBO Max. @ v CB hFE K e

10mf 16v 0603

Abstract: H8 SOT-23 npn smd 3a 0603 smd CAPACITOR 0603 10UH NCP1450 capacitor 10MF smd cdrh6d28-100nc 10uH inductor 1mF CAPACITOR
Contextual Info: Bill of Materials for the NCP 1450 Bipolar Transitor 2.7V Demonstration Board h 8/28/2003 Designator Quantity IC2 D2 Q2 C5 C4 C6 Cb Rb L2 1 1 1 1 1 1 1 1 1 Description Value PWM Step-up DC-DC controller Schottky Power Rectifier Bipolar Power NPN Low Profile Tantalum Capacitor

Contextual Info: This I cr Material Ln a tH Pro Electron Surface Mount Bipolar Devices continued t -1 UJ □ Copyrighted □ □ JE □ tn ru _□ Device No. (SOT-23 Mark) Case Style V CES * V CEO v CBO (V) (V) Min Min v *CES* V EBO (V) Min V CB (nA) Max (V) hfa c & & CE

marking C1

Abstract: TMPTA70 TMPT5401 h2t1
Contextual Info: PNP TRANSISTORS SOT-23/TO-236AB ELECTRICAL CHARACTERISTICS at T. = 25°C V BF CBO v (BR)CEO V(BR)EBO Max. @ v CB Device hFE We «T @ lc @ v CE Max. @ lc Marking (V) (V) (V) (nA) BCW29 C1 303 32 5.0 100 20 120 260 2.0 BCW30 C2 3ID3 32 5.0 100 20 215 500 2.0

RLF7045T

Abstract: led tail light pwm dimming RLF7045 capacitor 100nf 25v 0805 datasheet LM5010 lm321 vishay resistor C4532X7R2A105M AQY221N2S LMV321
Contextual Info: 1-12-05 Rev. 1 LM5010 Brake-Tail LED Drive U1 SW LED1 VIN Vcc CB D1 BST LM5010 CO Tail D3 L1 To Cff RESR ISEN + C IN VCC RON CF1 D2 D4 RON/SD Brake CSS SGND SS RTN FB Vout CFF RFF Vcc U2 RSET RI + - CF2 LM321 RTAIL RBRAKE Q1 PhotoMOS RPHD Theory of Operation

Contextual Info: I t,S0113D Pro Electron Surface Mount Bipolar Devices Device No. SOT-23 Mark Case Style 0040554 VCES* V VEBO VCBO CEO (V) (V) (V) Min Min Min I * ' ces 'C B O (c o n tin u e d ) v h fe V CB <nA) Max (V) h fa Min @ Max 'c (m A ) & V CE(SAT) & V CE (v) Max