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    2N5551S Price and Stock

    onsemi 2N5551

    Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Bulk
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    Onlinecomponents.com 2N5551 13,243
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    Semiconductors 2N5551

    Bipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 625 mW Through Hole TO-92-3
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    Onlinecomponents.com 2N5551 96
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    Taitron Components Inc 2N5551

    Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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    Onlinecomponents.com 2N5551 76
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    Diotec Semiconductor AG 2N5551

    Bipolar Transistor - TO-92 - 160V - 600mA - NPN
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    Onlinecomponents.com 2N5551
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    KEC 2N5551S-RTK/P

    SMALL SIGNAL BIPOLAR TRANSISTOR
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    Quest Components 2N5551S-RTK/P 2,300
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    Ameya Holding Limited 2N5551S-RTK/P 27,000
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    2N5551S Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5551S Korea Electronics High Voltage Transistor Original PDF
    2N5551S Korea Electronics EPITAXIAL PLANAR NPN TRANSISTOR Scan PDF
    2N5551S Korea Electronics High Voltage Transistor Scan PDF

    2N5551S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5551S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES 1999. 11. 30 Revision No : 2 1/2


    Original     		PDF 2N5551S

    SOT-23 ZF

    Abstract: sot 23 zf marking zf ZF NPN SOT-23 2N5551S sot23 transistor marking ZF
    Text: SEMICONDUCTOR 2N5551S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES : VCBO=180V, VCEO=160V H ᴌLow Leakage Current. 3 G A 2 D ᴌHigh Collector Breakdwon Voltage 1 : ICBO=50nA Max. VCB=120V


    Original     		PDF 2N5551S 100MHz SOT-23 ZF sot 23 zf marking zf ZF NPN SOT-23 2N5551S sot23 transistor marking ZF

    sot23 transistor marking ZF

    Abstract: SOT-23 ZF 2N5551S
    Text: SEMICONDUCTOR 2N5551S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES : VCBO=180V, VCEO=160V D High Collector Breakdwon Voltage 3 G A 2 H Low Leakage Current. 1 : ICBO=50nA Max. VCB=120V


    Original     		PDF 2N5551S 100MHz sot23 transistor marking ZF SOT-23 ZF 2N5551S

    SOT-23 Mark ZF

    Abstract: Mark ZF SOT-23 ZF 2N5551S ZF marking ZF SOT23 sot 23 zf MARKING ZF SOT-23
    Text: SEMICONDUCTOR 2N5551S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking ZF No. 1 Item Marking Device Mark ZF 2N5551S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


    Original     		PDF 2N5551S OT-23 SOT-23 Mark ZF Mark ZF SOT-23 ZF 2N5551S ZF marking ZF SOT23 sot 23 zf MARKING ZF SOT-23

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N5551S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES D ・High Collector Breakdwon Voltage 2 A 3 G : VCBO=180V, VCEO=160V H ・Low Leakage Current. 1 : ICBO=50nA Max. VCB=120V


    Original     		PDF 2N5551S 100MHz

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor

    2n5551 smd

    Abstract: 2N5551HR
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■


    Original     		PDF 2N5551HR 2N5551HR 2n5551 smd

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P

    2N5551UB

    Abstract: package LCC-3
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet — production data Features 3 BVCEO 160 V IC max 0.5 A 1 HFE at 5 V - 10 mA > 80 Operating temperature range -65 °C to +200 °C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL


    Original     		PDF 2N5551HR 2N5551HR 2N5551UB package LCC-3

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    2N5551S

    Abstract: MMBT5551LT1
    Text: MMBT5551LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 HIGH VOLTAGE TRANSISTOR o 1 Collector Dissipation:Pc-225mW Ta=25 Collector-Emiller Voltage: V CEO= 160V 2 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm o ABSOLUTE MAXIMUM RATINGS


    Original     		PDF MMBT5551LT1 OT-23 Pc-225mW 100mA 2N5551S MMBT5551LT1

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    st smd diode marking code

    Abstract: 2N5551HR marking code my SMD Transistor npn smd diode order marking code stmicroelectronics ST MAKE SMD TRANSISTOR 2N5551 marking code br 39 SMD NV SMD TRANSISTOR TRANSISTOR SMD MARKING CODES
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C 1 1 2 2 3 TO-18 • Hi-Rel NPN bipolar transistor ■ Linear gain characteristics ■ ESCC qualified


    Original     		PDF 2N5551HR 2N5551HR st smd diode marking code marking code my SMD Transistor npn smd diode order marking code stmicroelectronics ST MAKE SMD TRANSISTOR 2N5551 marking code br 39 SMD NV SMD TRANSISTOR TRANSISTOR SMD MARKING CODES

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


    Original     		PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD

    2N5551UB

    Abstract: SOC5551 SOC5551SW 2n5551 smd 2N5551HR IC 5201/019/05 SOC5551SW 520101904 SOC5551HRB 2N5551UB1
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■


    Original     		PDF 2N5551HR 2N5551HR 2N5551UB SOC5551 SOC5551SW 2n5551 smd IC 5201/019/05 SOC5551SW 520101904 SOC5551HRB 2N5551UB1

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


    Original     		PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05

    Untitled

    Abstract: No abstract text available
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■


    Original     		PDF 2N5551HR 2N5551HR

    2N5551S

    Abstract: sot23 transistor marking ZF
    Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO LTD 2N5551S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES DIM • High Collector Breakdwon Voltage : V Cbo=180V, V Ceo=160V • Low Leakage Current. : ICBo=50nA Max. V cb=120V


    OCR Scan     		PDF 2N5551S 100MHz 250//A 300//S, 2N5551S sot23 transistor marking ZF

    2N5551S

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA 2N5551S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES DIM A B C D E G H J K L M N P • High Collector Breakdwon Voltage : VCbo=180V, VCeo=160V • Low Leakage Current. : ICBo=50nA Max. VCb=120V


    OCR Scan     		PDF 2N5551S 100MHz 250//A 300//S, 2N5551S