CBO 40V CEO 25V EBO 5V Search Results

2n 2222A 3904

Contextual Info: DGG7423 ^ 2 •RHU TO-92 JEDEC Standards Numbers • N P N Transistors General purpose small signal amplifiers B V Ebo Min. ICBO Vbe (sat) Max. Cob Max. fr Min. @ Ic 10pF 160MHz Typ. B V qbo Min. BV ceo Min. 2N 2925 TO-92 (ECB) 25V 25V 5V 100nA 25V 235 470

marking r2k

Abstract: marking r1c GAJ SOT23 R1P SOT-223
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) •N P N Transistors General purpose small signal amplifiers SST SMT BV qbo Min. BV ceo Min. b v EB0 Min. SSTH30 MMST1130 30V 25V 5V SST5088 MMST5088 35V 30V 4.6V 'f° Max. @VCB . hF.E.

z10m

Abstract: psa56
Contextual Info: Transistors TO-92 JEDEC Standards Numbers #N PN Transistors General purpose small signal amplifiers P a ckage BV qbo Min. BV ceo Min. 2N2925 TO -92 (ECB) 25V 25V 2N3711 MPS3711 TO -92 (ECB) (EBC) 30V 2N3860 TO -92 (ECB) 2N5088 BV ebo Min. hFE Min . Max.

2n3904 TO-92

Contextual Info: Transistors TO-92 JEDEC Standards Numbers •N P N Transistors General purpose small signal amplifiers Package B V cbo Min. BV ceo Min. 2N2925 TO -92 (ECB) 25V 25V 2N3711 MPS3711 TO -92 (ECB) CEBC) 30V 2N3860 TO -92 (ECB) 2N5088 BVEBo Min. hFE Vce (sat)

2N3904 TO-92 type

Abstract: 2n4401 Die RJE9018 2n3904 c33 2n3904 C37 mps8097 CBO 40V CEO 25V EBO 5V
Contextual Info: Transistors/Leaded Type USA/European Specification Models • TO-92 Package/NPN Type For General Purpose Small Signal Amplifiers P art No. P a ckage BV cbo M in. BV ceo Min. BV ebo Min. hFE • ! f ° @Vcs Min. Max. @ lc & V ce Max. V e rs a ti V sd sat Max.

NPN CBO 40V CEO 25V EBO 5V

Abstract: MMST8598
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.

25V7K

Abstract: 2N5220 MPS6512 MPS6513 MPS6514 MPS6515 MPS6520 MPS6521 MPS6530 MPS6531
Contextual Info: ROHM CO MOE LTD 7 ß 5 f l [m D DÜG32Ö0 I RHM 1 nasa mm* s * 7 ^ 7•-Ol . General Purpose Amplifiers and Switches Type 2N5220 MPS6512 MPS6513 MPS6514 MPS6515 MPS6520 MPS6521 Package BV cbo Bg.1 Min. TO-92 20V (EBC) TO-92 40V (EBC) TO-92 40V (EBC) TO-92

sot83

Abstract: MARKING CODE R1C marking r2k IC marking R2k R2C marking marking r1c SOT23 R2P marking code R2C
Contextual Info: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions ,Unit : r SST SMT (U. & /European SOT-23) (SC-59/Japanese SOT-23) 2 0 .4 5 ± 0 .1 0 .9 5 1 0.8 + 0 . 1 ! (g)Frl t l °-95-o Î .0.95 Dimensions

2M5087

Abstract: 2M4401 2N3904 A31 NPS3704 2N3904 A38 NPN CBO 40V CEO 25V EBO 5V FN2222 2N3904 die TO92 30v 800ma 500ma 40v pnp
Contextual Info: U.S. European Type Series TO-92 •Package style and dimensions : mm T O -9 2 JEDEC Standards Numbers) A.B± 0.2 3.7 ± 0.2 NPN Transistors Electrical characteristics of each Part No. can be looked up from the data of DIE No.

Contextual Info: U.S. European Type Series TO-92 •P ackage style and dimensions Unit : mm T O -9 2 (JEDEC Standards Numbers) 4.6±0.2 3.7±0.2 NPN Transistors Electrical characteristics of each Part No. can be looked up from the data of DIE No. ■G eneral purpose small signal amplifiers

SF126

Abstract: transistor SD335 SD349 SSY20 SF829 SD 338 SF826 mikroelektronik Berlin SD339 SD338
Contextual Info: Der Kollektor ist mit der metallischen Montageflache leitend verbunden Uw e Beier Transistoren aus dem Kombinat Mikroelektronik electrónica • Band 245 UWE BEIER Transistoren aus dem Kombinat M ikroelektronik M ILITARVERLAG DER DEUTSCHEN DEM OKRATISCHEN

SST4124

Abstract: SST5086 SST5089 R2F SOT-23 marking c33 MMSTA70 SOT-23 R2C r1a SOT23 SSTA13 R2C marking
Contextual Info: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions (Unit SST SMT (U. S. /European SOT-23) (SC-59/Japanese SOT-23) 0.951°-* 1 .9± 0.2 f> > 1.9± 0.2 0 .4 5 ± 0 .1 0 .9 5 0.95 ;0 . 9 5 0 . 9 5

MARKING CODE R1C

Abstract: R2F SOT-23 R1H MARKING CODE 1T1 SOT-23 MMST3904 MMST8598 SOT-23 MARKING R2X SSTA29 R2C marking SOT-23 R2C
Contextual Info: U.S. European Type Series SST U.S. / European SOT-23 • SMT (SC-59 / Japanese SOT-23) •Package style and dimensions (Unit SST SMT (U. S. /European SOT-23) (SC-59/Japanese SOT-23) 0 .9 5 1 °- * 1 .9 ± 0 .2 f> > 1.9± 0.2 0.45 ±0.1 0.95 0.95 ; 0.95 0.95

2n4494

Abstract: MPS3709 MPS3711 2N4495 2N3707 2N3708 2N3709 PN2218 2N3711 MPS3707
Contextual Info: ^ .L l " . mge » 702^ H 6 0 0 0 3 2 7 0 ig 3 ffiRHM t-27-ö\ rT7m • Transistors • NPN Transistors TO-92) General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3710 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495

BC847

Abstract: BC846-BC848 NPN CBO 40V CEO 25V EBO 5V BC846 BC848
Contextual Info: BC846-BC848 NPN SILICON TRANSISTOR Features Power dissipation 。 P C M : 0.3 W Tamb=25 C Pluse Drain I CM : 0.1 mA Reverse Voltage V (BR)CBO : BC846 80V BC847 50V BC848 30V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C

PNP -50V -200mA sot23

Abstract: C858 BC858 BC856 BC857
Contextual Info: BC856-BC858 PNP SILICON TRANSISTOR Features Power dissipation 。 P C M : 0.3 W Tamb=25 C Pluse Drain I CM : -0.1 mA Reverse Voltage V (BR)CBO : BC856 -80V BC857 -50V BC858 -30V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C

solitron transistors

Abstract: SOLITRON DEVICES
Contextual Info: SOLITRON DEVICES INC “4 / - ' tl v - ,„ • -Ä - - * - 8 3 6 8602 v . " «¿-" ' V1- SOLITRON DEVICES - c »F|fl3böbDa OaOD47t, 7 •• v ; ^ - : ' -• :W i m -1- " - - - - - - -i • -^ 61C 00476 INC. D POWER TRANSISTORS 2N3750 2N3751 2N3752

Contextual Info: NPN Epitaxial Planar Transistor Formosa MS FMBT2222AW List List. 1 Package outline. 2

marking r2k

Abstract: MMST8598 IC marking R2k marking A32 MMST2907 R2B Marking G5B 500ma 40v pnp
Contextual Info: Transistors/Surface Mounting Type • SST3 Package/PNP Type Application Pre Amp Part No. B V c e o V ; Ic (mA @lc & Vqe f r (MHz) Cob (pF) Marking BC807-25 45 500 160 400 1 00 m A /1V 150 6 G5B B11 BC857A 45 100 110 230 2 m A /'5 V 250 4.5 G3E A32 Min. ^FE

3DD303A

Abstract: CBO 40V CEO 25V EBO 5V 3DD303
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD303A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 40V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A APPLICATIONS ·Designed for B/W TV vertical output applications.

BC557

Abstract: BC557 transistor BC556 BC558C
Contextual Info: BC556, A/B BC557, A/B/C BC558, A/B/C PNP General Purpose Transistor COLLECTOR 3 * "G" Lead Pb -Free TO-92 2 BASE 1 1 EMITTER 2 3 Maximum Ratings ( TA=25℃ C unless otherwise noted) Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

BC557

Abstract: bc558 bc556 BC557 TRANSISTOR BC558 PNP transistor CBC556 Transistor Bc556 BC557 PNP TRANSISTOR TRANSISTOR BC558 bc556 equivalent
Contextual Info: BC556, A/B BC557, A/B/C BC558, A/B/C PNP General Purpose Transistor COLLECTOR 3 TO-92 2 BASE 1 1 EMITTER 2 3 Maximum Ratings TA=25℃ C unless otherwise noted Rating Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous

T523

Abstract: EN4135 2SA1855 2SC483
Contextual Info: O rdering num ber: EN413S 2SA1855/2SC4837 No.4135 SAiYO PNP/NPN Epitaxial P lanar Silicon Transistors i 50V/4A Switing Applications A p p licatio n s •Power supplies, relay drivers, lamp drivers. F e a tu re s • Adoption of FBET and MBIT processes. • Large allowable collector dissipation.

MPS3388

Abstract: 2N3783 MPSS172 A5T3904 SDMFL 2N1711 2N1893 2N3704 pn4227 MPS3704
Contextual Info: s L MICRODEVICES INC ~ 14 D lF | s D 4 f lû 3 b OODDDTÛ b ^ ~ D GENERAL PURPOSE AMPLIFIERS AND MEDIUM-SPEED SWITCHES TYPE 2N1711 CASE STYLE BVc b o bvCEO b v eb o 'CBO Min Min Min Max 75V .5 0 VI 7V 10nA @ 1 20 V 80 V 7V T05 VCB 9 60 V 20 35 75 100-300 40