CE 2X SOT223 Search Results

Contextual Info: A Product Line of Diodes Incorporated DXT5551P5 ADV AN CE I N FORM AT I ON 160V NPN HIGH VOLTAGE TRANSISTOR PowerDI 5 Features and Benefits Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm

Contextual Info: A Product Line of Diodes Incorporated DXT2011P5 ADV AN CE I N FORM AT I ON 100V NPN LOW SAT MEDIUM POWER TRANSISTOR POWERDI 5 Features Mechanical Data • • • • • • • • • • 43% smaller than SOT223; 60% smaller than TO252 Maximum height just 1.1mm

Contextual Info: A Product Line of Diodes Incorporated DXTP560BP5 ADV AN CE I N FORM AT I ON 500V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR POWERDI 5 Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > -500V IC = -150mA Continuous Collector Current

3SMC30A

Abstract: CMPZ4614 P6SMB56CA CMSD4448 sod-80 stabistor 882L CMOZ20V STB-400 3smc60ca CMZ5945B
Contextual Info: Diodes Surface Mount Packages Actual Size SOD-923 SOT-923 SOT-953 SOD-523 SOT-523 SOT-563 SOD-323 SOT-323 SOT-363 SOD-123 SOD-123F SOT-23 SOT-23F SOT-143 SOT-26 SOT-28 SOT-89 SOT-223 SOT-228 SMA SMB SMC SOIC-16 HD DIP TLP Tiny Leadless Package Bottom View

TRANSISTOR SMD CODE PACKAGE SOT89

Abstract: smd TRANSISTOR code marking 2F SMD transistor 2x sot 23 TRANSISTOR SMD MARKING CODE 2b TRANSISTOR SMD CODE PACKAGE SOT89 4 TRANSISTOR SMD MARKING CODE T7 smd transistor pinout sot23 TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD 2t sot23 smd transistor marking 2J
Contextual Info: SMD SWITCHING TRANSISTORS DESCRIPTION •Philips Components switching transistors are fabricated using gold doping to reduce the minority carriers in the junction, thus improving the transition performance of the devices. All are specified for turn-off and turn-on

Contextual Info: MMBT4126 PNP General-Purpose Amplifier Description C This device is designed for general-purpose amplifier and switching applications at collector currents to 10 A as a switch and to 100 mA as an amplifier. E SOT-23 Mark: ZF B Ordering Information Part Number

2N4401

Abstract: MMBT4401 2N4401 FAIRCHILD 2N4401, fairchild
Contextual Info: 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 SOT-23 E B Mark: 2X NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: 2N4401 / MMBT4401 2N4401 MMBT4401 C E C B TO-92 SOT-23 E B Mark: 2X NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MARKING CODE SMD IC

Abstract: PBHV8115Z PBHV9115Z SC-73 TRANSISTOR SMD MARKING CODE 210 transistor smd code marking 101
Contextual Info: PBHV8115Z 150 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 02 — 9 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

PBHV8115Z

Abstract: PBHV9115Z SC-73 MARKING CODE SMD IC
Contextual Info: PBHV9115Z 150 V, 1 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

V8215Z

Abstract: SC-73 MARKING CODE SMD IC PBHV8215Z 170KW
Contextual Info: PBHV8215Z 150 V, 2 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 11 November 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

PBHV9540Z

Abstract: PBHV8140Z SC-73 640 smd transistor marking transistor SMD MARKING CODE MARKING CODE SMD IC
Contextual Info: PBHV9540Z 500 V, 0.5 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

V8540Z

Abstract: PBHV8540Z PBHV9040Z SC-73 MARKING CODE SMD IC
Contextual Info: PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 7 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

PBHV8115Z

Abstract: PBHV9115Z SC-73
Contextual Info: PBHV8115Z 150 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 5 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

PBHV8540Z

Abstract: PBHV9040Z SC-73 MARKING CODE SMD IC MARKING SMD IC CODE
Contextual Info: PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat BISS transistor Rev. 02 — 14 January 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

v8140z

Abstract: PBHV8140Z SC-73 MARKING CODE SMD IC V8140
Contextual Info: PBHV8140Z 500 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBHV9540Z 500 V, 0.5 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

PBHV9215Z,115

Contextual Info: PBHV9215Z 150 V, 2 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBHV8140Z 500 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

TRANSISTOR SMD MARKING CODE 108

Abstract: PBHV9215Z V9215Z SC-73 transistor SMD MARKING CODE MARKING CODE SMD IC transistor smd code marking 102 transistor smd code marking 101 TRANSISTOR SMD MARKING CODE 72
Contextual Info: PBHV9215Z 150 V, 2 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

V9040Z

Abstract: PBHV9040Z PBHV8540Z SC-73 MARKING SMD IC CODE 10 pin
Contextual Info: PBHV9040Z 500 V, 0.25 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 15 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBHV8215Z 150 V, 2 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 11 November 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.

V9040Z

Abstract: SOT223 nxp packing PBHV8540Z PBHV9040Z SC-73 MARKING CODE SMD IC
Contextual Info: PBHV9040Z 500 V, 0.25 A PNP high-voltage low VCEsat BISS transistor Rev. 01 — 19 February 2008 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.

MMBT3906

Contextual Info: 2N3906 / MMBT3906 / PZT3906 PNP General-Purpose Amplifier Description This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 PZT3906 MMBT3906 C C E E TO-92 SOT-23 SOT-223 B Mark:2A