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    CEB NPN Search Results

    CEB NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    CEB NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    egs SOT23

    Abstract: BC817K-40 thermal resistance
    Text: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration


    Original     		PDF BC817. BC818. BC807. BC808. BC817-16 BC817K-16* BC817-25 BC817K-25* BC817-25W BC817K-25W* egs SOT23 BC817K-40 thermal resistance

    6CS transistor

    Abstract: transistor 6cs
    Text: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration


    Original     		PDF BC817. BC818. BC807. BC808. BC817-16 BC817-25 BC817-25W BC817-40 BC817-40W BC818-16W 6CS transistor transistor 6cs

    Untitled

    Abstract: No abstract text available
    Text: BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 3 1 • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17P Marking MCs


    Original     		PDF BFS17P

    BF517

    Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ BCW66
    Text: BF517 NPN Silicon RF Transistor • For amplifier and oscillator applications in TV-tuners 2 3 • Pb-free RoHS compliant package 1) 1 • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BF517


    Original     		PDF BF517 BF517 RF NPN POWER TRANSISTOR C 10-12 GHZ BCW66

    rf npn power transistor c 10-12 ghz

    Abstract: RF NPN POWER TRANSISTOR 3 GHZ BFS17P marking code 10 sot23 RF TRANSISTOR 2.5 GHZ s parameter BCW66 NPN marking MCs
    Text: BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 3 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFS17P Marking MCs Pin Configuration 1=B 2=E 3=C Package


    Original     		PDF BFS17P rf npn power transistor c 10-12 ghz RF NPN POWER TRANSISTOR 3 GHZ BFS17P marking code 10 sot23 RF TRANSISTOR 2.5 GHZ s parameter BCW66 NPN marking MCs

    Untitled

    Abstract: No abstract text available
    Text: BFS17S NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at 4 5 6 collector currents from 1 mA to 20 mA • BFS17S: For orientation in reel see 1 2 3 package information below ESD Electrostatic discharge sensitive device, observe handling precaution!


    Original     		PDF BFS17S BFS17S: OT363

    RF NPN POWER TRANSISTOR C 10-12 GHZ

    Abstract: BCR108W BFS17W
    Text: BFS17W NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA • Pb-free RoHS compliant 3 2 1 package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!


    Original     		PDF BFS17W OT323 RF NPN POWER TRANSISTOR C 10-12 GHZ BCR108W BFS17W

    Untitled

    Abstract: No abstract text available
    Text: BF517 NPN Silicon RF Transistor • For amplifier and oscillator applications in TV-tuners 2 3 • Pb-free RoHS compliant package 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BF517 Marking LRs Pin Configuration 1=B


    Original     		PDF BF517

    Untitled

    Abstract: No abstract text available
    Text: BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 3 • Pb-free RoHS compliant package 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17P Marking MCs


    Original     		PDF BFS17P

    Untitled

    Abstract: No abstract text available
    Text: BFS17W NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 3 2 1 • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17W Marking MCs


    Original     		PDF BFS17W OT323

    Untitled

    Abstract: No abstract text available
    Text: BF 224 CASE T0-92E BF224 is an NPN silicon planar epitaxial transistor designed for-general purpose high frequency oscillator, amplifier,and mixer applications. CEB C BE ABSOLUTE MAXIMUM RATINGS 45V 30V 4V 50mA 250mW -55 to +150°C Collector-Base Voltage VCBO


    OCR Scan     		PDF T0-92E BF224 250mW 3-8P3363;

    BF224

    Abstract: G510
    Text: BF 224 CASE T0-92E BF224 is an NPN silicon planar epitaxial transistor designed for-general purpose high frequency oscillator, amplifier,and mixer applications. CEB C SE ABSOLUTE MAXIMUM RATINGS 45V 30V 4V 50mA 250mW -55 to +150°C Collector-Base Voltage VCBO


    OCR Scan     		PDF BF224 T0-92E 250mW 100jiA Boxi9477, 3-0033G3, 3-00022t G510

    BF224

    Abstract: No abstract text available
    Text: CASE T0-92E BF224 is an NPN silicon planar epitaxial transistor designed for-general purpose high frequency oscillator, amplifier,and mixer applications. CEB C SE ABSOLUTE MAXIMUM RATINGS 45V 30V 4V 50mA 250mW -55 to +150°C Collector-Base Voltage VCBO Collector-Emitter Voltage


    OCR Scan     		PDF BF224 T0-92E 250mW 100ma

    BF297

    Abstract: BF299 BF298 BF29T CEB npn
    Text: BF297- BF 298 • BF 299 NPN HIGH VOLTAGE VIDEO AMPLIFIERS ÄgfJ THE BF297, BF298, BF299 ARE NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO AMPLIFIERS IN TELEVISION RECEIVERS. THEY FEATURE GOOD FREQUENCY CHARACTERISTICS. II• CASE TO-92F CEB


    OCR Scan     		PDF bf297* BF29T, BF298, BF299 O-92F BF297 BF298 100mA 625mW BF29T CEB npn

    2N5372

    Abstract: 2N5369 2N5373 2N5368 2N5370 2N5371 2N5374 2N5375 2N5568 NPN, PNP for 500ma, 30v
    Text: 2N 5368 through 2N 5375 ^1 COMPLEMENTARY SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES _ ;SF A THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. CASE TO-92F CEB 2N 5368 ffPN


    OCR Scan     		PDF 2N5368 2N5375 O-92F 2N5568 2N5369 2N5370 500mA 2N5372 2N5373 2N5374 2N5371 NPN, PNP for 500ma, 30v

    TIS97

    Abstract: TIS98 BOX69477 NPN Silicon Planar Epitaxial Transistors
    Text: TIS 97 TIS 98 NFN SILICON PLANAR EPITAXIAL TRANSISTORS CASE TO-92 F THE TIS97 AND TIS98 ARE LOW NOISE NPN SILICON PLANAE EPITAXIAL TRANSISTORS FOR USE IN H I-FI AUDIO AMPLIFIERS AND GENERAL PURPOSE LOW FREQUENCY APPLICATIONS. CEB ABSOLUTE MAXIMUM RATINGS C o llecto r-B ase V oltage


    OCR Scan     		PDF TIS97 TIS98 200mA 360mW 500mW BOX69477 NPN Silicon Planar Epitaxial Transistors

    C1874

    Abstract: No abstract text available
    Text: C1874 NPN SILICON TRANSISTOR BBBHBM PM M W * v y tr tfw r ir v } ' CASE TO-92F DESCRIPTION C l874 is NPN silicon planar epitaxial transistor for use in AF driver and output stages. CEB ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage V EB=0 Collector-Emitter Voltage (IB =0)


    OCR Scan     		PDF C1874 CI874 O-92F 800mA 625mW Mar-97

    Untitled

    Abstract: No abstract text available
    Text: T IS 98 CASE TO-92 F THE TIS97 AND TIS98 ARE LOW NOISE NPN SILICON PLANAE EPITAXIAL TRANSISTORS FOR USE IN H I-F I AUDIO AMPLIFIERS AND GENERAL PURPOSE LOW FREQUENCY APPLICATIONS. CEB ABSOLUTE MAXIMUM RATINGS C o lle c to r-B a s e V o ltag e C o lle c to r - E m itte r V o ltag e


    OCR Scan     		PDF TIS97 TIS98 TIS98 TIS97 100pA 100uA 10Kfl- 100Hz 100jjA

    2N6567

    Abstract: 2N6566 N6566 CEB npn common collector PNP Scans-0011480
    Text: U LT R A LOW rEC sat SILICO N EP IT A X IA L JUNCTION NPN/PNP SWITCHING TRAN SIST O R S 2N6566 2N6567 G E O M E T R Y 453, B O TH NPN & PNP, PG. 59 • • • • COMPLEMENTARY TYPES 2N6566(I\!PI\I), 2N6567(PNP) r EC (sat) 2 Ohms MAX. LOW Ceb LOW LEAKAGE


    OCR Scan     		PDF N6566 2N6567 2N6566 2N6567 2N6566-2N6567 159kHz CEB npn common collector PNP Scans-0011480

    C1874

    Abstract: No abstract text available
    Text: CRO C1874 NPN SILICON TRANSISTOR CASE TO -92F DESCRIPTION C 1874 is N P N silicon p lan a r epitaxial transistor for use in A F d riv e r and output stages. CEB ABSOLUTE MAXIMUM RATINGS C o llector-E m itter V oltage V E B = 0 C o llector-E m itter V oltage ( IB = 0 )


    OCR Scan     		PDF C1874 C1874 800mA 625mW Mar-97 500mA 300mA 100mA 300raA

    Untitled

    Abstract: No abstract text available
    Text: CRO C1874 NPN SIL IC O N T R A N S IS T O R CASE TO -92F D E S C R IP T IO N C1874 is N PN silicon planar epitaxial transistor tor use in AF driver and output stages. CEB A B S O L U T E M A X IM U M R A T IN G S Collector-Em itter V oltage V E B = 0 VCEO


    OCR Scan     		PDF C1874 C1874 625mW 500niA 300mA 100mA

    MICRO ELECTRONICS ltd transistor

    Abstract: VCES-25V CEB npn
    Text: UKU NPN SIL IC O N T R A N S IS T O R CASE TO-92F D E S C R IP T IO N C l 874 is N PN silicon planar epitaxial transistor tor use in AF driver and output stages. CEB A B S O L U T E M A X IM U M R A T IN G S Collector-Emitter V oltage V E B = 0 VCEO 45V


    OCR Scan     		PDF CI874 O-92F 800mA 625mW Mar-97 500mA 300mA 100mA MICRO ELECTRONICS ltd transistor VCES-25V CEB npn

    BCX29

    Abstract: BF199 RF Bf240 BF906 CEB npn BF368 BF199 BCX25 BCX26 BCX28
    Text: I N D U S T R I A L T R A N S I S T O R S TO-92 These devices are special prodbcts ranges intended fo r use in applications w hich require well specified high perform ing devices like high q u a lity am plifier differen tial input, driver stage. NPN PN P


    OCR Scan     		PDF BCX25 BCX26 BCX27 BCX28 BCX29 BCX30 BCX45 BCX46 BCX47 BCX48 BF199 RF Bf240 BF906 CEB npn BF368 BF199

    transistor potencia

    Abstract: PA6015 t092 ebc Transistor BC558 ebc CEB npn PB6025 PA6014 transistores BF494
    Text: SI» I1ICR0ELETR0NICA S/A SDE D • fl531Bñ4 OOODOOfl 4 ■ TRANSISTORES Term. Tipo BC546 Pol. NPN BC547 NPN BC548 NPN BC549 NPN BC556 PNP BC557 PNP BC558 BC559 BF199 BF494 BF495 PNP PNP NPN NPN NPN PA6013 NPN PB6013 PNP PA6014 NPN PB6014 PNP PA6015 NPN PB6015 PNP


    OCR Scan     		PDF fl531BÃ BC546 BC547 BC548 BC549 BC556 BC557 PA6015 PB6015 PA6025 transistor potencia t092 ebc Transistor BC558 ebc CEB npn PB6025 PA6014 transistores BF494