CEB NPN Search Results

CEB NPN Result Highlights (5)

Part	Manufacturer	Description
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini

CEB NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: BF 224 CASE T0-92E BF224 is an NPN silicon planar epitaxial transistor designed for-general purpose high frequency oscillator, amplifier,and mixer applications. CEB C BE ABSOLUTE MAXIMUM RATINGS 45V 30V 4V 50mA 250mW -55 to +150°C Collector-Base Voltage VCBO	OCR Scan	T0-92E BF224 250mW 3-8P3363;	PDF
BF224 Abstract: G510 Contextual Info: BF 224 CASE T0-92E BF224 is an NPN silicon planar epitaxial transistor designed for-general purpose high frequency oscillator, amplifier,and mixer applications. CEB C SE ABSOLUTE MAXIMUM RATINGS 45V 30V 4V 50mA 250mW -55 to +150°C Collector-Base Voltage VCBO	OCR Scan	BF224 T0-92E 250mW 100jiA Boxi9477, 3-0033G3, 3-00022t G510	PDF
BF224 Contextual Info: CASE T0-92E BF224 is an NPN silicon planar epitaxial transistor designed for-general purpose high frequency oscillator, amplifier,and mixer applications. CEB C SE ABSOLUTE MAXIMUM RATINGS 45V 30V 4V 50mA 250mW -55 to +150°C Collector-Base Voltage VCBO Collector-Emitter Voltage	OCR Scan	BF224 T0-92E 250mW 100ma	PDF
BF297 Abstract: BF299 BF298 BF29T CEB npn Contextual Info: BF297- BF 298 • BF 299 NPN HIGH VOLTAGE VIDEO AMPLIFIERS ÄgfJ THE BF297, BF298, BF299 ARE NPN SILICON PLANAR TRANSISTORS DESIGNED FOR HIGH VOLTAGE VIDEO AMPLIFIERS IN TELEVISION RECEIVERS. THEY FEATURE GOOD FREQUENCY CHARACTERISTICS. II• CASE TO-92F CEB	OCR Scan	bf297* BF29T, BF298, BF299 O-92F BF297 BF298 100mA 625mW BF29T CEB npn	PDF
TIS97 Abstract: TIS98 BOX69477 Contextual Info: T IS 97 TIS 98 NFN SILICON PLANAR EPITAXIAL TRANSISTORS CASE TO-92 F THE TIS97 AND TIS98 ARE LOW NOISE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN HI-FI AUDIO AMPLIFIERS AND GENERAL PURPOSE LOW FREQUENCY APPLICATIONS. CEB ABSOLUTE MAXIMUM RATINGS TIS97	OCR Scan	TIS97 TIS98 T0-92F TIS98 200mA 200mA 360mW 500mW BOX69477	PDF
2N5372 Abstract: 2N5369 2N5373 2N5368 2N5370 2N5371 2N5374 2N5375 2N5568 NPN, PNP for 500ma, 30v Contextual Info: 2N 5368 through 2N 5375 ^1 COMPLEMENTARY SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES _ ;SF A THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. CASE TO-92F CEB 2N 5368 ffPN	OCR Scan	2N5368 2N5375 O-92F 2N5568 2N5369 2N5370 500mA 2N5372 2N5373 2N5374 2N5371 NPN, PNP for 500ma, 30v	PDF
TIS97 Abstract: TIS98 BOX69477 NPN Silicon Planar Epitaxial Transistors Contextual Info: TIS 97 TIS 98 NFN SILICON PLANAR EPITAXIAL TRANSISTORS CASE TO-92 F THE TIS97 AND TIS98 ARE LOW NOISE NPN SILICON PLANAE EPITAXIAL TRANSISTORS FOR USE IN H I-FI AUDIO AMPLIFIERS AND GENERAL PURPOSE LOW FREQUENCY APPLICATIONS. CEB ABSOLUTE MAXIMUM RATINGS C o llecto r-B ase V oltage	OCR Scan	TIS97 TIS98 200mA 360mW 500mW BOX69477 NPN Silicon Planar Epitaxial Transistors	PDF
C1874 Contextual Info: C1874 NPN SILICON TRANSISTOR BBBHBM PM M W * v y tr tfw r ir v } ' CASE TO-92F DESCRIPTION C l874 is NPN silicon planar epitaxial transistor for use in AF driver and output stages. CEB ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage V EB=0 Collector-Emitter Voltage (IB =0)	OCR Scan	C1874 CI874 O-92F 800mA 625mW Mar-97	PDF
Contextual Info: T IS 98 CASE TO-92 F THE TIS97 AND TIS98 ARE LOW NOISE NPN SILICON PLANAE EPITAXIAL TRANSISTORS FOR USE IN H I-F I AUDIO AMPLIFIERS AND GENERAL PURPOSE LOW FREQUENCY APPLICATIONS. CEB ABSOLUTE MAXIMUM RATINGS C o lle c to r-B a s e V o ltag e C o lle c to r - E m itte r V o ltag e	OCR Scan	TIS97 TIS98 TIS98 TIS97 100pA 100uA 10Kfl- 100Hz 100jjA	PDF
2N6567 Abstract: 2N6566 N6566 CEB npn common collector PNP Scans-0011480 Contextual Info: U LT R A LOW rEC sat SILICO N EP IT A X IA L JUNCTION NPN/PNP SWITCHING TRAN SIST O R S 2N6566 2N6567 G E O M E T R Y 453, B O TH NPN & PNP, PG. 59 • • • • COMPLEMENTARY TYPES 2N6566(I\!PI\I), 2N6567(PNP) r EC (sat) 2 Ohms MAX. LOW Ceb LOW LEAKAGE	OCR Scan	N6566 2N6567 2N6566 2N6567 2N6566-2N6567 159kHz CEB npn common collector PNP Scans-0011480	PDF
C1874 Contextual Info: CRO C1874 NPN SILICON TRANSISTOR CASE TO -92F DESCRIPTION C 1874 is N P N silicon p lan a r epitaxial transistor for use in A F d riv e r and output stages. CEB ABSOLUTE MAXIMUM RATINGS C o llector-E m itter V oltage V E B = 0 C o llector-E m itter V oltage ( IB = 0 )	OCR Scan	C1874 C1874 800mA 625mW Mar-97 500mA 300mA 100mA 300raA	PDF
Contextual Info: CRO C1874 NPN SIL IC O N T R A N S IS T O R CASE TO -92F D E S C R IP T IO N C1874 is N PN silicon planar epitaxial transistor tor use in AF driver and output stages. CEB A B S O L U T E M A X IM U M R A T IN G S Collector-Em itter V oltage V E B = 0 VCEO	OCR Scan	C1874 C1874 625mW 500niA 300mA 100mA	PDF
MICRO ELECTRONICS ltd transistor Abstract: VCES-25V CEB npn Contextual Info: UKU NPN SIL IC O N T R A N S IS T O R CASE TO-92F D E S C R IP T IO N C l 874 is N PN silicon planar epitaxial transistor tor use in AF driver and output stages. CEB A B S O L U T E M A X IM U M R A T IN G S Collector-Emitter V oltage V E B = 0 VCEO 45V	OCR Scan	CI874 O-92F 800mA 625mW Mar-97 500mA 300mA 100mA MICRO ELECTRONICS ltd transistor VCES-25V CEB npn	PDF
BCX29 Abstract: BF199 RF Bf240 BF906 CEB npn BF368 BF199 BCX25 BCX26 BCX28 Contextual Info: I N D U S T R I A L T R A N S I S T O R S TO-92 These devices are special prodbcts ranges intended fo r use in applications w hich require well specified high perform ing devices like high q u a lity am plifier differen tial input, driver stage. NPN PN P	OCR Scan	BCX25 BCX26 BCX27 BCX28 BCX29 BCX30 BCX45 BCX46 BCX47 BCX48 BF199 RF Bf240 BF906 CEB npn BF368 BF199	PDF

6CS transistor Abstract: transistor 6cs Contextual Info: BC817./ BC818. NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC807./W, BC808./W PNP Type Marking Pin Configuration	Original	BC817. BC818. BC807. BC808. BC817-16 BC817-25 BC817-25W BC817-40 BC817-40W BC818-16W 6CS transistor transistor 6cs	PDF
Contextual Info: BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 3 1 • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17P Marking MCs	Original	BFS17P	PDF
BF517 Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ BCW66 Contextual Info: BF517 NPN Silicon RF Transistor • For amplifier and oscillator applications in TV-tuners 2 3 • Pb-free RoHS compliant package 1) 1 • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BF517	Original	BF517 BF517 RF NPN POWER TRANSISTOR C 10-12 GHZ BCW66	PDF
rf npn power transistor c 10-12 ghz Abstract: RF NPN POWER TRANSISTOR 3 GHZ BFS17P marking code 10 sot23 RF TRANSISTOR 2.5 GHZ s parameter BCW66 NPN marking MCs Contextual Info: BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 3 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFS17P Marking MCs Pin Configuration 1=B 2=E 3=C Package	Original	BFS17P rf npn power transistor c 10-12 ghz RF NPN POWER TRANSISTOR 3 GHZ BFS17P marking code 10 sot23 RF TRANSISTOR 2.5 GHZ s parameter BCW66 NPN marking MCs	PDF
Contextual Info: BFS17S NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at 4 5 6 collector currents from 1 mA to 20 mA • BFS17S: For orientation in reel see 1 2 3 package information below ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BFS17S BFS17S: OT363	PDF
RF NPN POWER TRANSISTOR C 10-12 GHZ Abstract: BCR108W BFS17W Contextual Info: BFS17W NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA • Pb-free RoHS compliant 3 2 1 package 1) • Qualified according AEC Q101 ESD (Electrostatic discharge) sensitive device, observe handling precaution!	Original	BFS17W OT323 RF NPN POWER TRANSISTOR C 10-12 GHZ BCR108W BFS17W	PDF
Contextual Info: BF517 NPN Silicon RF Transistor • For amplifier and oscillator applications in TV-tuners 2 3 • Pb-free RoHS compliant package 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BF517 Marking LRs Pin Configuration 1=B	Original	BF517	PDF
Contextual Info: BFS17P NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 2 3 • Pb-free RoHS compliant package 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17P Marking MCs	Original	BFS17P	PDF
Contextual Info: BFS17W NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA 3 2 1 • Pb-free RoHS compliant package ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFS17W Marking MCs	Original	BFS17W OT323	PDF
transistor potencia Abstract: PA6015 t092 ebc Transistor BC558 ebc CEB npn PB6025 PA6014 transistores BF494 Contextual Info: SI» I1ICR0ELETR0NICA S/A SDE D • fl531Bñ4 OOODOOfl 4 ■ TRANSISTORES Term. Tipo BC546 Pol. NPN BC547 NPN BC548 NPN BC549 NPN BC556 PNP BC557 PNP BC558 BC559 BF199 BF494 BF495 PNP PNP NPN NPN NPN PA6013 NPN PB6013 PNP PA6014 NPN PB6014 PNP PA6015 NPN PB6015 PNP	OCR Scan	fl531BÃ BC546 BC547 BC548 BC549 BC556 BC557 PA6015 PB6015 PA6025 transistor potencia t092 ebc Transistor BC558 ebc CEB npn PB6025 PA6014 transistores BF494	PDF

CEB NPN Search Results

CEB NPN Result Highlights (5)

CEB NPN Datasheets Context Search

BF224

BF224

BF297

TIS97

2N5372

TIS97

C1874

2N6567

C1874

MICRO ELECTRONICS ltd transistor

BCX29

6CS transistor

BF517

rf npn power transistor c 10-12 ghz

RF NPN POWER TRANSISTOR C 10-12 GHZ

transistor potencia