CED02N6G Search Results
CED02N6G Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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CED02N6GContextual Info: CED02N6G/CEU02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1.9A, RDS ON = 5.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. |
Original |
CED02N6G/CEU02N6G O-251 O-252 O-251 100ms CED02N6G | |
CED02N6GContextual Info: CED02N6G/CEU02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 2A, RDS ON = 5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. |
Original |
CED02N6G/CEU02N6G O-251 O-252 O-251 CED02N6G | |
CEP50N06
Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
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Original |
O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139 |