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    CEM9 Search Results

    CEM9 Datasheets (34)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CEM9400
    		Chino-Excel Technology P-Channel Enhancement Mode Field Effect Transistor Scan PDF 509.12KB 5
    CEM9400A
    		Chino-Excel Technology P-Channel Enhancement Mode Field Effect Transistor Scan PDF 503.04KB 5
    CEM9407
    		Chino-Excel Technology P-Channel Enhancement Mode MOSFET Scan PDF 507.97KB 5
    CEM9407A
    		Chino-Excel Technology P-Channel Enhancement Mode Field Effect Transistor Original PDF 103.2KB 4
    CEM9410
    		Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF 508.11KB 5
    CEM9410A
    		Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF 514.22KB 5
    CEM9424
    		Chino-Excel Technology P-Channel Enhancement Mode Field Effect Transistor Original PDF 39.54KB 5
    CEM9424
    		Chino-Excel Technology P-Channel Enhancement Mode Field Effect Transistor Scan PDF 512.76KB 5
    CEM9425
    		Chino-Excel Technology P-Channel Enhancement Mode Field Effect Transistor Scan PDF 513.09KB 5
    CEM9426
    		Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF 511.16KB 5
    CEM9430
    		Chino-Excel Technology P-Channel Enhancement Mode MOSFET Scan PDF 509.89KB 5
    CEM9430A
    		Chino-Excel Technology P-Channel Enhancement Mode MOSFET Scan PDF 509.89KB 5
    CEM9433
    		Chino-Excel Technology P-Channel Enhancement Mode Field Effect Transistor Scan PDF 510.67KB 5
    CEM9435
    		Chino-Excel Technology P-Channel Enhancement Mode MOSFET Scan PDF 508.24KB 5
    CEM9435A
    		Chino-Excel Technology P-Channel Enhancement Mode MOSFET Scan PDF 511.78KB 5
    CEM9436A
    		Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Original PDF 101.03KB 4
    CEM9445
    		Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Original PDF 80.64KB 4
    CEM9925
    		Chino-Excel Technology Dual N-Channel Enhancement Mode Field Effect Transistor Original PDF 158.59KB 5
    CEM9925
    		Chino-Excel Technology Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF 514.18KB 5
    CEM9926
    		Chino-Excel Technology Dual N-Channel Enhancement Mode Field Effect Transistor Scan PDF 517.28KB 5
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    CEM9 Price and Stock

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    UMW CEM9926A

    MOSFET 2N-CH 20V 7A 8SOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () CEM9926A Cut Tape 2,675 1
    • 1 $0.66
    • 10 $0.41
    • 100 $0.26
    • 1000 $0.18
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    CEM9926A Digi-Reel 2,675 1
    • 1 $0.66
    • 10 $0.41
    • 100 $0.26
    • 1000 $0.18
    • 10000 $0.18
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    CEM9926A Reel 3,000
    • 1 -
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    • 10000 $0.13
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    Micron Technology Inc MT29F16T08GSLCEM9-QB:C

    IC FLASH 16TBIT FBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT29F16T08GSLCEM9-QB:C Box 1,120
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    Avnet Americas MT29F16T08GSLCEM9-QB:C Tray 26 Weeks 1,120
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    • 10000 $195.74
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    Mouser Electronics MT29F16T08GSLCEM9-QB:C
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    • 10000 $226.30
    		Get Quote
    Newark MT29F16T08GSLCEM9-QB:C Bulk 1,120
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    • 1000 $203.90
    • 10000 $203.90
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    Micron Technology Inc MT29F16T08GSLCEM9-QB:C-TR

    IC FLASH 16TBIT FBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT29F16T08GSLCEM9-QB:C-TR Reel 1,500
    • 1 -
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    Micron Technology Inc MT29F16T08GSLCEM9-QB:C TR

    QLC 16T 2TX8 FBGA - Tape and Reel (Alt: MT29F16T08GSLCEM9-QB:C TR)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MT29F16T08GSLCEM9-QB:C TR Reel 111 Weeks 1,500
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    Mouser Electronics MT29F16T08GSLCEM9-QB:C TR
    • 1 -
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    • 10000 $226.29
    		Get Quote

    Fox Electronics FC4SDCCEM9.81293-T1

    - Tape and Reel (Alt: FC4SDCCEM9.81293-T1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FC4SDCCEM9.81293-T1 Reel 111 Weeks 1,000
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    Find more CEM9 price and stock on Findchips.com

    CEM9 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    52A32

    Abstract: CEM9926A
    Contextual Info: CEM9926A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 20V, 6A, RDS ON = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		CEM9926A 52A32 CEM9926A PDF

    CEM9952A

    Contextual Info: CEM9952A Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES 30V, 3.7A, RDS(ON) = 80mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. -30V, -2.9A, RDS(ON) = 100mΩ @VGS = -10V. RDS(ON) = 150mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON).


    Original     		CEM9952A CEM9952A PDF

    CEM9953A

    Contextual Info: CEM9953A Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -30V, -3.5A, RDS ON = 80mΩ @VGS = -10V. RDS(ON) = 130mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		CEM9953A CEM9953A PDF

    CEM9936A

    Contextual Info: CEM9936A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 5.4A, RDS ON = 40mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		CEM9936A CEM9936A PDF

    CEM9435

    Contextual Info: CEM9435 March 1998 P-Channel Enhancement Mode MOSFET FEATURES • - 3 0 V , - 5 . 1 A , R ds o n =55 itiQ RDS(ON)=105mQ @ V g s = -10 V . @ V gs = -4 .5 V . • Super high dense cell design for extremely low Rds(on). • High power and current handing capability.


    OCR Scan     		CEM9435 55itiQ 105mQ CEM9435 PDF

    JD 250

    Abstract: 34A4S CEM9400A
    Contextual Info: CEM9400A PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES • -30V , - 3 .4 A , R ds o n =1 30mQ @Vgs=-10V. • Super high dense cell design for extremely low R ds(on). • High power and current handing capability. • Surface Mount Package.


    OCR Scan     		CEM9400A 130itiQ JD 250 34A4S CEM9400A PDF

    CEM9947

    Contextual Info: CEM9947 Dual P-Channel Enhancement Mode MOSFET FEATURES • -20V, -3.5A, RDS ON =1 OOmQ @VGS=-10V. -1A, RDS(ON)=190mQ @VGS=-4.5V. • Super high dense cell design for extremely low RDS(ON). » High power and current handing capability. » Surface Mount Package.


    OCR Scan     		CEM9947 CEM9947 PDF

    CEM9433

    Contextual Info: CEM9433 AUGUST 1999 P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -20V , -5.4A , RDS ON =65mΩ @VGS=-4.5V. RDS(ON)=100mΩ @VGS=-2.5V. Super high dense cell design for extremely low RDS(ON). D D D D 8 7 6 5 High power and current handing capability.


    Original     		CEM9433 CEM9433 PDF

    c5v8

    Abstract: CEM9945
    Contextual Info: CEM9945 March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 60V , 3.3A , RDS ON =100m Ω @VGS=10V. RDS(ON)=200m Ω @VGS=4.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		CEM9945 c5v8 CEM9945 PDF

    CEM9926A

    Contextual Info: CEM9926A PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 20V , 6A , RDS ON =30m Ω @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		CEM9926A 300ms CEM9926A PDF

    CEM9926

    Abstract: CEM9
    Contextual Info: CEM9926 Aug. 1998 Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 20V , 6A , RDS ON =30m Ω @VGS=4.5V. RDS(ON)=40m Ω @VGS=2.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		CEM9926 300ms CEM9926 CEM9 PDF

    CEM9939A

    Abstract: PF328
    Contextual Info: CEM9939A Nov. 2001 Dual Enhancement Mode Field Effect Transistor N and P Channel FEATURES 5 30V ,7A , RDS(ON)=30m Ω @VGS=10V. RDS(ON)=42m Ω @VGS=4.5V. -30V , -3.5A , RDS(ON)=100mΩ @VGS=-10V. RDS(ON)=160m Ω @VGS=-4.5V. Super high dense cell design for extremely low RDS(ON).


    Original     		CEM9939A 30ating CEM9939A PF328 PDF

    CEM9410

    Contextual Info: CEM9410 March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V , 7A , RDS ON =30mΩ @VGS=10V. RDS(ON)=50mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). D D D D 8 7 6 5 1 2 3 4 N/C S S G High power and current handing capability.


    Original     		CEM9410 CEM9410 PDF

    CEM9436A

    Contextual Info: CEM9436A PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 6.2A , RDS ON =38m Ω @VGS=10V. RDS(ON)=52m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). D D D D 8 7 6 5 High power and current handing capability.


    Original     		CEM9436A CEM9436A PDF

    CEM9424

    Contextual Info: CEM9424 P-Channel Enhancement Mode Field Effect Transistor FEATURES 5 -20V, -7.7A, RDS ON = 25mΩ @VGS = -4.5V. RDS(ON) = 35mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		CEM9424 CEM9424 PDF

    CEM9946

    Contextual Info: CEM9946 Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 4.3A, RDS ON = 52mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		CEM9946 CEM9946 PDF

    Calex

    Abstract: T7779 CEM900 CEM801
    Contextual Info: C/LEX 5 to 6 WATT DC/DC CONVERTERS CEM900 SERIES SPECIFICATIONS Ail S pecifications Typical At N om inal Line. Full L oad, and 2 5 ° C U nless O therw ise N oted . 2:1 Input Range Efficiency to 80% Pi Input Filter Short Circuit Protection 100 kHz Switching Frequency


    OCR Scan     		CEM900 B2-38 Calex T7779 CEM801 PDF

    CEM9936A

    Contextual Info: CEM9936A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 5.4A, RDS ON = 40mΩ @VGS = 10V. RDS(ON) = 55mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		CEM9936A CEM9936A PDF

    52A32

    Abstract: CEM9926A
    Contextual Info: CEM9926A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6A, RDS ON = 27mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		CEM9926A 52A32 CEM9926A PDF

    CEM9436A

    Contextual Info: CEM9436A N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 6.2A, RDS ON = 38mΩ @VGS = 10V. RDS(ON) = 52mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		CEM9436A CEM9436A PDF

    CEM9435A

    Contextual Info: CEM9435A March 1998 P-Channel Enhancement Mode MOSFET 5 FEATURES -30V , -5.3A , RDS ON =50m Ω @VGS=-10V. RDS(ON)=90m Ω @VGS=-4.5V. D D D D 8 7 6 5 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface Mount Package.


    Original     		CEM9435A CEM9435A PDF

    CEM9410

    Contextual Info: CEM9410 N-Channel Enhancement Mode Field Effect Transistor FEATURES 5 30V, 7A, RDS ON = 30mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		CEM9410 CEM9410 PDF

    CEM9435A

    Contextual Info: CEM9435A P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5.3A, RDS ON = 50mΩ @VGS = -10V. RDS(ON) = 90mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.


    Original     		CEM9435A CEM9435A PDF

    CEM9936

    Abstract: CEM9936A
    Contextual Info: CEM9936A PRELIMINARY Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 30V , 5.4A , RDS ON =40mΩ @VGS=10V. RDS(ON)=55m Ω @VGS=4.5V. D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S2 Super high dense cell design for extremely low RDS(ON). High power and current handing capability.


    Original     		CEM9936A CEM9936 CEM9936A PDF