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    CEP4060A Search Results

    CEP4060A Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CEP4060A Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Original PDF
    CEP4060A Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    CEP4060AL Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    CEP4060ALR Chino-Excel Technology N-channel enhancement mode field effect transistor Scan PDF
    CEP4060AR Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: CEP4060A/CEB4060A N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 17A, RDS ON = 85mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-220 & TO-263 package.


    Original     		PDF CEP4060A/CEB4060A O-220 O-263

    AA43

    Abstract: cep4060al 654V
    Text: CEP4060AL/CEB4060AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 17A,RDS ON = 75mΩ @VGS = 10V. RDS(ON) = 90mΩ @VGS = 5.0V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		PDF CEP4060AL/CEB4060AL O-220 O-263 AA43 cep4060al 654V

    CEB4060AL

    Abstract: CEP4060AL
    Text: CEP4060AL/CEB4060AL March 1998 N-Channel Enhancement Mode Field Effect Transistor 4 FEATURES D 60V , 15A , RDS ON =80m Ω @VGS=10V. RDS(ON)=85m Ω @VGS=5.0V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.


    Original     		PDF CEP4060AL/CEB4060AL O-220 O-263 CEB4060AL CEP4060AL

    Untitled

    Abstract: No abstract text available
    Text: CEP4060A/CEB4060A March 1998 4 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 60V , 15A , RDS ON =85m Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.


    Original     		PDF CEP4060A/CEB4060A O-220 O-263

    Untitled

    Abstract: No abstract text available
    Text: CEP4060AL/CEB4060AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 15A,RDS ON = 80mΩ @VGS = 10V. RDS(ON) = 95mΩ @VGS = 5.0V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		PDF CEP4060AL/CEB4060AL O-220 O-263

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139

    Untitled

    Abstract: No abstract text available
    Text: CEP4060AR/CEB4060AR M a rc h 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 1 5 A , Rps ON =85mQ @V gs =10V. • Super high dense cell design for extremely low R d s (o n >. • High power and current handling capability. • TO-220 & TO-263 package.


    OCR Scan     		PDF CEP4060AR/CEB4060AR 85mfl O-220 O-263 to-263 to-220

    Untitled

    Abstract: No abstract text available
    Text: mu t i CEP4060A/CEB4060A March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 15 A , RDS ON =85m Q @ V gs=10V. • Super high dense cell design for extremely low R ds (on). • High power and current handling capability. • TO-220 & TO-263 package.


    OCR Scan     		PDF CEP4060A/CEB4060A O-22Q O-263 P4060A/C B4060A

    cep4060al

    Abstract: No abstract text available
    Text: March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 15 A , R ds ON =80iti Q D @ V gs =10V. R ds(on)=85itiQ @ V gs =5.0V. • Super high dense cell design for extremely low Rds(on). • High power and current handling capability.


    OCR Scan     		PDF 85itiQ O-220 O-263 to-263 to-220 CEP4060ALR/CEB4060ALR cep4060al

    CEB4060AL

    Abstract: cep4060al OT400U
    Text: March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 60V , 15A , R d s o n =80 itiQ R ds (o n )=85 iti i2 @Vgs=10V. @Vgs=5.0V. • Super high dense cell design for extremely low R ds(on). • High power and current handling capability.


    OCR Scan     		PDF CEP4060AL/CEB4060AL 80itiQ 85itiQ O-220 O-263 to-263 to-220 CEP4060AL/CEB4060AL CEB4060AL cep4060al OT400U