Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    CES2301 Search Results

    SF Impression Pixel

    CES2301 Price and Stock

    MOSLEADER CES2301-ML

    Single P -20V -2.8A SOT-23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CES2301-ML Reel 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.03416
    • 10000 $0.03122
    		Buy Now

    CES2301 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CES2301 Chino-Excel Technology P-Channel Enhancement Mode Field Effect Transistor Original PDF

    CES2301 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CES2301

    Abstract: No abstract text available
    Text: CES2301 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES D -20V , -2.4A , RDS ON =95m Ω (typ) @VGS=-4.5V. RDS(ON)=130m Ω(typ) @VGS=-2.5V. High dense cell design for low RDS(ON). Rugged and reliable. 7 SOT-23 Package. G SOT-23 D S


    Original     		PDF CES2301 OT-23 OT-23 CES2301

    CES2301

    Abstract: No abstract text available
    Text: CES2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.8A, RDS ON = 100mΩ @VGS = -4.5V. RDS(ON) = 150mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package.


    Original     		PDF CES2301 OT-23 OT-23 CES2301

    CES2301

    Abstract: No abstract text available
    Text: CES2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.8A, RDS ON = 100mΩ @VGS = -4.5V. RDS(ON) = 150mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package.


    Original     		PDF CES2301 OT-23 OT-23 CES2301

    CES2301

    Abstract: No abstract text available
    Text: CES2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.8A, RDS ON = 100mΩ @VGS = -4.5V. RDS(ON) = 150mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package.


    Original     		PDF CES2301 OT-23 OT-23 CES2301

    CES2301

    Abstract: No abstract text available
    Text: CES2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -2.8A, RDS ON = 100mΩ @VGS = -4.5V. RDS(ON) = 150mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. D Lead free product is acquired. SOT-23 package.


    Original     		PDF CES2301 OT-23 OT-23 CES2301

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Text: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		PDF O-251/TO-252 O-220/TO-263 OT-23 OT-223 OT-89 2928-8J O-220FM CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139