CFB0101
Abstract: No abstract text available
Text: CFB0101 Series gˆ”ˆ˜„’@p›˜–• ˆ@g„a™@fet™ mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•›™š•”L@tˆŸ„™@WWPYY †•“
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CFB0101
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4600
Abstract: CFB0101
Text: General Purpose GaAs FETs CFB0101 Series August 2006 - Rev 03-Aug-06 Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 2 Characteristic Data and Specifications are subject to change without notice. 2006 Mimix Broadband, Inc.
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CFB0101
03-Aug-06
4600
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CF001-01
Abstract: CFB0101 CFB0101B CFA0101A CF001 GaAs MESFET
Text: GaAs MESFET Transistor CF001-01 March 2008 - Rev 15-Mar-08 Features High Gain: Usable to 44 GHz P1dB Power: 21 dBm Wfer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-01 GaAs-based transistor is a 300 um gate width, sub-half-micron gate length GaAs device with Silicon
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CF001-01
15-Mar-08
CF001-01
CF001-01-000X
CFB0101
CFB0101B
CFA0101A
CF001
GaAs MESFET
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xg1015-SE
Abstract: XB1013-qt CMM6001-BD CFP0103-SP CMM6004-BD XZ1003-QT XU1016 QH XP1073-BD XD1008-QH XP1035-BD
Text: Sales Contact Information NORTH AMERICA COLORADO, UTAH USA ALABAMA, FLORIDA, GEORGIA, MISSISSIPPI, NORTH CAROLINA, SOUTH CAROLINA,TENNESSEE, Electronic Marketing Associates EMA 919-847-8800 rdenny@emarep.com Alabama Office 256-880-8050 djones@emarep.com
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CFB0101
Abstract: No abstract text available
Text: S £ ELERÊ7EK = P ro d u ct S p e c ific a tio n s D ecem ber 1997 CFB0101 Series General Purpose GaAs FETs 1 Of 2 Features □ High Gain □ 19 dBm Power Output □ Ion Implanted Material □ 70 Mil Stripline Commercial Package B Package Diagram 1.75 ±0.15
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CFB0101
CFB0101-G
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Untitled
Abstract: No abstract text available
Text: 9 CFB0101 Series Product Specifications December 1997 General Purpose GaAs FETs 1 Of 2 Features □ High Gain □ 19 dBm Power Output □ Ion Implanted Material □ 70 Mil Stripline Commercial Package B Package Diagram 1.75 ±0.15 SOURCE 0.5 ±0.05 DRAIN
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CFB0101
CFB0101-G
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CFB0101
Abstract: No abstract text available
Text: - ££L "Ë T £K P ro d u c t S p e c ific a tio n s D ecem ber 1997 CFBOlOl Series General Purpose GaAs FETs 1 o f 2 F eatures □ H igh G ain □ 19 dB m P ow er O utput □ Ion Im p lan ted M aterial □ 70 M il Strip lin e C om m ercial P ackage
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CFB0101-G
CFB0101
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