CGH27015P Search Results

CGH27015P Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CGH27015P		Wolfspeed	15W, GAN HEMT, 28V, DC-6.0GHZ, P	Original	PDF	1.6MB
CGH27015P		Wolfspeed	15W, GAN HEMT, 28V, DC-6.0GHZ, P	Original	PDF	1.6MB

CGH27015P Price and Stock

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MACOM


MACOM CGH27015P RF MOSFET HEMT 28V 440196
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH27015P	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	CGH27015P					1 - 10 - 100 $75.81 1000 $75.81 10000 $75.81	Get Quote
Richardson RFPD	CGH27015P				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

CGH27015P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CGH27015 Abstract: CGH27015F CGH27015-TB CGH40010F JESD22 cgh40010 18pF Contextual Info: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,	Original	CGH27015 CGH27015 CGH2701 27015P CGH27015F CGH27015-TB CGH40010F JESD22 cgh40010 18pF	PDF
CGH09120F Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F Contextual Info: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR	Original	CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F	PDF
CGH27015-TB Abstract: CGH27015 CGH27015F JESD22 Contextual Info: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,	Original	CGH27015 CGH27015 CGH2701 27015P CGH27015-TB CGH27015F JESD22	PDF
Contextual Info: PRELIMINARY CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX	Original	CGH27015 CGH27015 CGH2701 27015P	PDF
STR W 5753 a Abstract: str w 5753 str 5753 CGH27015-TB 10UF 470PF CGH27015 CGH27015F 44019 Contextual Info: CGH27015 15 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for 2.3 to 2.9GHz WiMAX	Original	CGH27015 CGH27015 CGH2701 27015P STR W 5753 a str w 5753 str 5753 CGH27015-TB 10UF 470PF CGH27015F 44019	PDF
CGH27015-TB Abstract: CGH27015 Contextual Info: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,	Original	CGH27015 CGH27015 CGH2701 27015P CGH27015-TB	PDF
Contextual Info: CGH27015 15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27015 is a gallium nitride GaN high electron mobility transistor designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE,	Original	CGH27015 CGH27015 CGH2701 27015P	PDF