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MACOM CGH27060F RF MOSFET HEMT 28V 440193
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH27060F	Tray	72		1	1 $334.27 10 $288.789 100 $277.436 1000 $277.436 10000 $277.436	Buy Now
Mouser Electronics	CGH27060F		96			1 $244.66 10 $244.64 100 $244.61 1000 $244.61 10000 $244.61	Buy Now
Richardson RFPD	CGH27060F				50	1 - 10 - 100 $234.89 1000 $234.89 10000 $234.89	Buy Now
MACOM CGH27060F-AMP AMPLIFIER, 2.3-2.7GHZ, CGH27060F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CGH27060F-AMP	Bulk			1	1 $787.51 10 $787.51 100 $787.51 1000 $787.51 10000 $787.51	Buy Now
Richardson RFPD	CGH27060F-AMP				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

CGH27060F Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
CGH27060F		Cree	60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX		Original	PDF	776.5KB	8

CGH27060F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CGH27060 Abstract: str 16006 CGH40045F CGH27015 CGH27060F JESD22 tRANSISTOR 2.7 3.1 3.5 GHZ cw Contextual Info: CGH27060F 60 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,	Original	CGH27060F CGH27060F CGH2706 CGH27060 str 16006 CGH40045F CGH27015 JESD22 tRANSISTOR 2.7 3.1 3.5 GHZ cw	PDF
str 5 q 0765 Abstract: CGH27060F transistor 15478 EVM1 10UF 470PF CGH27060-TB RO4350B str 0765 J2/transistor 15478 Contextual Info: CGH27060F 60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for 2.3-2.9GHz WiMAX and	Original	CGH27060F CGH27060F CGH2706 01roduct str 5 q 0765 transistor 15478 EVM1 10UF 470PF CGH27060-TB RO4350B str 0765 J2/transistor 15478	PDF
Contextual Info: CGH27060F 60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,	Original	CGH27060F CGH27060F CGH2706	PDF
CGH27060F Abstract: 10UF 470PF Contextual Info: PRELIMINARY CGH27060F 60 W, 2300-2900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for 2.3-2.9GHz WiMAX and	Original	CGH27060F CGH27060F CGH2706 10UF 470PF	PDF
str 16006 Abstract: 44019 Contextual Info: CGH27060F 60 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,	Original	CGH27060F CGH27060F CGH2706 str 16006 44019	PDF
str 5 q 0765 Abstract: CGH27060 str 16006 CGH27060F 10UF 470PF CGH27015 JESD22 Contextual Info: CGH27060F 60 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,	Original	CGH27060F CGH27060F CGH2706 str 5 q 0765 CGH27060 str 16006 10UF 470PF CGH27015 JESD22	PDF
Contextual Info: CGH27060F 60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,	Original	CGH27060F CGH27060F CGH2706	PDF
cgh40045 Abstract: str 5 q 0765 Contextual Info: CGH27060F 60 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,	Original	CGH27060F CGH27060F CGH2706 cgh40045 str 5 q 0765	PDF
str 5 q 0765 Contextual Info: CGH27060F 60 W Peak, 28V, GaN HEMT for Linear Communications from VHF to 3 GHz Cree’s CGH27060F is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH27060F ideal for VHF, Comms, 3G, 4G, LTE,	Original	CGH27060F CGH27060F CGH2706 str 5 q 0765	PDF
CGH09120F Abstract: CGH25120F CDPA21480 CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F Contextual Info: Gallium Nitride GaN HEMT Transistors for BTS Applications Cree’s Doherty CDPA21480, performance. CGH21240F demonstration provides amplifier innovative The amplifier devices with uses digital two CDPA21480 Spectrum at 2.11, 2.14 & 2.17 GHz PAVE = 49 dBm, 2-Carrier WCDMA, PAR = 7.5 dB with CFR	Original	CDPA21480, CGH21240F CDPA21480 CGH09120F CGH25120F CGH27060F ofdm predistortion CGH55030F 440117 CGH21120F CGH21240F CGH27015F	PDF
10UF Abstract: CGH35015 CGH35015F CGH35015-TB molex 5238 Contextual Info: CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree’s CGH35015 is a gallium nitride GaN high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities,	Original	CGH35015 CGH35015 CGH3501 35015P 12product 10UF CGH35015F CGH35015-TB molex 5238	PDF
transistor C1096 Abstract: transistor C2271 c2271 transistor TRANSISTOR C1555 GaN ADS Gan hemt transistor x band c1096 CGH40010F CuMoCu GaAs HEMTs X band Contextual Info: WMC: Challenges in Model-Based HPA Design Application of Non-Linear Models in a range of challenging GaN HEMT Power Amplifier Designs Ray Pengelly, Brad Millon, Don Farrell, Bill Pribble and Simon Wood Cree Inc., Research Triangle Park, NC 27709 Outline • Attributes of GaN HEMTs	Original		PDF