CGHV96 Search Results

CGHV96 Datasheets (13)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
CGHV96050F1		Cree/Wolfspeed	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF MOSFET HEMT 40V 440210	Original	PDF	1.72MB
CGHV96050F1-AMP		Wolfspeed	CGHV96050F1 DEV BOARD WITH HEMT	Original	PDF	1.66MB
CGHV96050F1-AMP		Wolfspeed	CGHV96050F1 DEV BOARD WITH HEMT	Original	PDF	1.82MB
CGHV96050F1-TB		Cree/Wolfspeed	RF/IF and RFID - RF Evaluation and Development Kits, Boards - BOARD TEST FIXTURE FOR CGHV96050	Original	PDF	1.72MB
CGHV96050F2		Cree	RF FETs, Discrete Semiconductor Products, FET RF GAN HEMT 50W	Original	PDF		12
CGHV96050F2-AMP		Wolfspeed	CGHV96050F2 DEV BOARD WITH HEMT	Original	PDF	1.15MB
CGHV96050F2-TB		Cree	RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV96050F2	Original	PDF		12
CGHV96100F2		Cree	RF FETs, Discrete Semiconductor Products, FET RF GAN HEMT 100W	Original	PDF		12
CGHV96100F2-AMP		Wolfspeed	CGHV96100F2 DEV BOARD WITH HEMT	Original	PDF	1.57MB
CGHV96100F2-AMP		Wolfspeed	CGHV96100F2 DEV BOARD WITH HEMT	Original	PDF	1.24MB
CGHV96100F2-TB		Cree	RF Evaluation and Development Kits, Boards, RF/IF and RFID, TEST FIXTURE FOR CGHV96100F2	Original	PDF		12
CGHV96130F		Wolfspeed	100W GAN HEMT 7.9-9.6GHZ 50-OHM	Original	PDF	960.33KB
CGHV96130F-AMP		Wolfspeed	8.4-9.6GHZ, AMP W/ CGHV96100F2	Original	PDF	960.33KB

CGHV96 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2	PDF
CGHV96050F2 Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96050F2 50-ohm, CGHV96050F2 CGHV96 050F2	PDF
Contextual Info: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1	PDF
40VPulse Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2 40VPulse	PDF
Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96050F2 50-ohm, CGHV96050F2	PDF
Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2	PDF
Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1	PDF
Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1	PDF
CGHV96050F2 Abstract: CGHV96 Contextual Info: CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96050F2 50-ohm, CGHV96050F2 CGHV96 050F2	PDF
CGHV96100F2 Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2	PDF
CGHV96050F1 Contextual Info: CGHV96050F1 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96050F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96050F1 50-ohm, CGHV96050F1 CGHV96 050F1	PDF
Contextual Info: CGHV96100F2 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F2 50-ohm, CGHV96100F2 CGHV96 100F2	PDF
CGHV96100F1 Abstract: taconic Contextual Info: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison	Original	CGHV96100F1 50-ohm, CGHV96100F1 CGHV96 100F1 taconic	PDF